POWER DIOD Search Results

Contextual Info: 16. Programmable Power and Temperature Sensing Diode in Stratix III Devices SIII51016-1.1 Introduction The total power of an FPGA includes static power and dynamic power. Static power is the power consumed by the FPGA when it is programmed but no clocks are operating, while dynamic power is comprised of the

power diodes with V-I characteristics

Abstract: variable power supply circuit
Contextual Info: 16. Programmable Power and Temperature-Sensing Diodes in Stratix III Devices SIII51016-1.5 Introduction The total power of an FPGA includes static power and dynamic power. Static power is the power consumed by the FPGA when it is programmed but no clocks are

NTE5700

Abstract: NTE5701 NTE5702 d 5702 1200v scr NTE5705 schematic diagram scr 10K Varistor schematic symbol for varistor vgd schematic diagram
Contextual Info: NTE5700 thru NTE5705 Industrial Power Module Description: The NTE5700 through NTE5705 series of Integrated Power Circuits consist of power thyristors and power diodes configured in a single package. Applications include power supplies, control circuits and battery chargers.

Contextual Info: Power Management in Stratix V Devices 11 2013.05.06 SV51013 Subscribe Feedback This chapter describes the programmable power technology, hot-socketing feature, power-on reset POR requirements, power-up sequencing recommendation, temperature sensing diode (TSD), and their

2 Wavelength Laser Diode

Abstract: SLD304V SLD304V-1 SLD304V-2 SLD304V-21 SLD304V-3 marking PHO
Contextual Info: _ SLD304V SONY, lOOOmW High Power Laser Diode Description Package O utline Unit: mm SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output

Laser Diode 1550 nm

Abstract: SLD304
Contextual Info: SLD304V SONY, lOOOmW High Power Laser Diode Package Outline Description SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current

Contextual Info: SLD304V SONY, lOOOmW High Power Laser Diode Description SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Package Outline

AC-DC Controllers

Contextual Info: WHY DIODES – POWER SUPPLY 1 Why DIODES? Simple and Efficient Solutions In Power Supply Accessible Design and Applications Expertise Full System Solution Complete Power Solutions for Multiple Applications Industry-standard discretes and ICs Improve power supply efficiency

b8h100g

Abstract: MBRB8H100T4G
Contextual Info: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and

APT0601

Abstract: APTM100A13SCG APT0502
Contextual Info: APTM100A13SCG Phase leg Series & SiC parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS Q1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

SLD104U

Abstract: SLD104AU SLD104U equivalent C6802 IEC60825-1 AlGaAs laser diode low noise, 780 nm, 7 mw low noise, 780 nm, 5.6 mm, 5 mw
Contextual Info: SLD104AU AlGaAs Laser Diode Description The SLD104AU is a AlGaAs laser diode developed for positive power supplies. In comparison with the SLD104U, this device attains even lower power consumption levels. Features • Low power consumption • Single power supply

SiC POWER MOSFET

Abstract: sic MOSFET APTMC60TLM14CAG
Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

reverse-conducting thyristor

Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Contextual Info: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate

B8H100G

Abstract: B8H100 MBRB8H100T4G B8H1 C146C marking 146C
Contextual Info: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and

B5100

Abstract: MBRD5H100T4G
Contextual Info: MBRD5H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and

SLD302V

Abstract: SLD302V-1 SLD302V-2 SLD302V-21 SLD302V-24 SLD302V-25 SLD302V-3
Contextual Info: SLD302V 200mW High Power Laser Diode Description The SLD302V is a gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current Pin Configuration

Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

B5100

Abstract: MBRD5H100T4G
Contextual Info: MBRD5H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and

B2515L

Abstract: diode B2515L
Contextual Info: MBRB2515L Preferred Device SWITCHMODE Power Rectifier OR’ing Function Diode D2PAK Surface Mount Power Package http://onsemi.com The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art

8etho6

Abstract: 15ETH06 PFC CIRCUITS 30EPH06 30ETH06 8ETH06 PFC CIRCUIT design
Contextual Info: BOOST PFC EFFICIENCY WITH 30% LOWER POWER LOSSES 600V Hyperfast, Soft Recovery Diodes for Power Factor Correction PFC Circuits POWER LOSSES IN A 500W PFC BOOST CIRCUIT 12 Conduction Losses (W) 11 Switching Losses (W) 10 POWER DISSIPATION (W) Reduce power losses by more than 30% in continuous current mode PFC boost circuits for offline

SLD301V-1

Abstract: SLD301V SLD301V-2 SLD301V-21 SLD301V-24 SLD301V-25 SLD301V-3
Contextual Info: SLD301V 100mW High Power Laser Diode Description The SLD301V is a gain-guided, high-power laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current M-248 Po = 90mW

APT0406

Abstract: APT0501 APT0502 APTM20AM10STG
Contextual Info: APTM20AM10STG Phase leg Series & parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies NT C2 VBUS Q1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

248 830

Contextual Info: SLD301V 100mW High Power Laser Diode Description The SLD301V is a gain-guided, high-power laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current M-248 Po = 90mW