POWER AMPLIFIER S BAND GHZ MHZ Search Results

SSPA C Band

Abstract: power amplifier s band ghz mhz 2.45 Ghz power amplifier x band high power amplifier SSPA
Contextual Info: Solid State Power Amplifier High Power, Broadband, S Band Solid State RF Amplifier • • • • • Aethercomm P/N SSPA 2227-80 is a high power, S Band, solid state RF amplifier SSPA which covers in excess of 500 MHz of bandwidth from 2.2 to 2.7 GHz. This Class AB SSPA offers

RF amplifer

Abstract: SSPA SSPA s-band 49dBm
Contextual Info: Solid State Power Amplifier High Power S Band Solid State RF Amplifier Aethercomm P/N SSPA2.2-2.6-80 is a high power, solid state RF amplifer SSPA for use in commercial or military systems. It offers greater than 30 dB of gain from 2.2 GHz to 2.6 GHz. It has a

SSPA

Abstract: SSPA C Band SSPA-1722-80 5.7 GHz power amplifier x band high power amplifier base station high power amplifier power amplifier s band ghz mhz
Contextual Info: Solid State Power Amplifier High Power, Broadband, L & S Band Solid State RF Amplifier • • • • Aethercomm P/N SSPA 1722-80 is a high power, solid state RF amplifier SSPA which covers in excess of 500 MHz of bandwidth from 1.7 to 2.2 GHz. This Class AB SSPA offers greater than 30

Contextual Info: Part Number: Integra IBP3134M25 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar Technology − Ultra-high fT Part number IBP3134M25 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.4 GHz. Operating under the pulse

bfr91

Contextual Info: TEMIC BFR91 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain •

transistor BFR93

Contextual Info: Temic BFR93/BFR93R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain

BFR91A

Contextual Info: TEMIC BFR91A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain

Contextual Info: TEMIC BFR96TS S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain

ML 1557 b transistor

Abstract: lm 1766 ic LM 748
Contextual Info: TEMIC BFR90A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain

lm 538 n ic

Abstract: BFR90
Contextual Info: TEMIC BFR90 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain •

RF amplifer

Contextual Info: Solid State Power Amplifier Broadband S Band Solid State RF Power Amplifier • • • • Aethercomm P/N 30005-201 is a high power, broadband solid state power amplifer SSPA for use in commercial or military systems. It offers greater than 20 dB of gain from 1.0 GHz to 3.2

S890T

Abstract: S-890 t S 890 T NPN planar RF transistor transistor applications telefun S-890 Planar RF Transistor MA 2831 1S890
Contextual Info: S 890 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figures D High transition frequency Dimensions in mm Absolute Maximum Ratings

NEL2001

Abstract: NEL2000 DB15F NEL2004 NEL2004F02-24 NEL2012 NEL2012F02-24 NEL2035 NEL2035F03-24 nec microwave
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PC N/PC S base station applications.

SOT-23 marking 717

Abstract: un 1044 Telefunken u 257
Contextual Info: Temic BFR92/BFR92R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain

Contextual Info: Temic BFQ65 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. M Applications RF-amplifier up to GHz range specially for wide band an­ tenna amplifier. Features • High power gain

transistor MAR 543

Abstract: transistor BFR91 IPS240 BFR91 transistor transistor mar 839 Telefunken u 439 transistor MAR 439
Contextual Info: Temic BFR91 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • • • High power gain Low noise figure High transition frequency BFR91 Marking: BFR91

BFQ65

Abstract: mar 739 LINEAR/525/OS/LM01A/MAR 527 transistor
Contextual Info: Temic BFQ65 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band an­ tenna amplifier. Features • • • High power gain

mar 618

Abstract: BFR93 transistor BFR93 Telefunken u 267 Marking A2 SOT-23 MAR 618 transistor
Contextual Info: Temic BFR93/BFR93R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • • • High power gain Low noise figure High transition frequency R n I—J B .

AM/SSC 9500 ic data

Contextual Info: DATA SHEET_ GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEA TU R E S • High Power Gain: Gs = 5.0 dB TYP. @ f = 12 GHz • Gate Length : Lg • Gate Width : Wg • 4-pin super minimold •

Transistor BFR 96

Abstract: TRANSISTOR BC 157 TRANSISTOR BC 158 transistor K 3596 TRANSISTOR as BC 158 BFR96S transistor bc 238 b silicon npn planar rf transistor sot 143 transistor B 722 Telefunken u 237
Contextual Info: TELEFUNKEN ELECTRONIC file D • fiSSOO^b 0 0 0 5 3 0 3 T BFR 96 S electronic Creative Technologies Silicon NPN Planar RF Transistor Applications; RF-amplifier up to GHz range specially for wide band antenna amplifier Features: • High power gain • Low noise figures

BFR93AW

Contextual Info: Temic BFR93AW S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications Wide band amplifier up to GHz range. Features • • High power gain High transition frequency •

Contextual Info: PRELIMINARY DATA SHEET_ GaAs INTEGRATED CIRCUIT MC-7641 1.5 GHz BAND POWER AMPLIFIER FOR PDC HAND-HELD PHONE DESCRIPTION M C-7641 is a 1.5 G H z band G aA s M ulti-chip IC w h ich w a s d e ve lo p e d for digita l C e llu la r ha nd -held phone. The

telefunken IC

Abstract: marking p2 Telefunken MA 2831 telefunken s 150 ic MA 2831 1s392
Contextual Info: S 392 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency Dimensions in mm Marking: P2 Plastic case SOT 23 Absolute Maximum Ratings

BFR93A

Abstract: marking A3 amplifier case 449 S parameters of BFR93AR GHz transistor
Contextual Info: T e m ic BFR93A/BFR93AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications Wide band amplifier up to GHz range. Features • • High power gain High transition frequency