POWER 1A 25V MOSFET Search Results

Contextual Info: WTN9575 Surface Mount P-Channel Enhancement Mode Power MOSFET P b Lead Pb -Free DRAIN CURRENT -4.0 AMPERES DRAIN SOURCE VOLTAGE 2,4 DRAIN -60 VOLTAGE 1 GATE Features: 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3 SOURCE * Super high dense cell design for low RDS(ON)

HCT801

Abstract: HCT801TX HCT802 VN0109 VP0109 TRANSISTOR BI 185
Contextual Info: @ . OPTEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source Voltage. 90V

SOP8 Package

Contextual Info: WTK6679 Surface Mount P-Channel Enhancement Mode MOSFET 7 -14 AMPERES 6 D 3 DRAIN CURRENT D S 8 S 2 D S 1 P b Lead Pb -Free DRAIN SOURCE VOLTAGE 5 D 4 G Features: * Super high dense * Cell design for low RDS(ON) * RDS(ON)<10mΩ@VGS = -10V * RDS(ON)<13mΩ@VGS = -4.5V

Contextual Info: 2SK3974-01L,S FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

Contextual Info: 2SK3974-01L,S FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

AP2318GEN

Contextual Info: AP2318GEN Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive D ▼ Small outline package ▼ RoHS Compliant BVDSS 30V RDS ON 720mΩ ID 1A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to

27BSC

Abstract: marking 62m
Contextual Info: WTK9410 8 D S 7 D S 2 P b Lead Pb -Free 1 Surface Mount N-Channel Enhancement Mode MOSFET 6 D 3 S DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 5 D 4 G Features: * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON)

MOSFET 600V 1A

Abstract: BALLAST CFL
Contextual Info: MPK02N6 N-Channel POWER MOSFET Features 600V, 1A, Typical Rds on = 7Ω Extremely High dv/dt Capability 100% Avalanche Tested New High Voltage Benchmark Gate Charge Minimized Application Low Power Battery Chargers Swith Mode Low Power Supplies Low Power, Ballast, CFL(Compact

AN1332

Abstract: smd transistor marking C14 C5 MARKING smd transistor smd transistor marking 1p T DIODE smd marking R12 smd transistor pinout sot23 MARKING SMD transistor R11 smd transistor marking 1p smd transistor marking sp1 capacitor SM 1206 100uf 6.3V
Contextual Info: ISL8510EVAL1Z 1A Buck Regulator with Integrated MOSFETs Application Note The ISL8510 is a high-performance, triple output controller that provides a single, high frequency power solution for a variety of point of load applications. The ISL8510 integrates

Contextual Info: SSDF9504 23A, 40V, RDS ON 26m -20A, -40V, RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION TO-252-4L The SSDF9504 provide the designer with best combination

smd transistor marking r14

Abstract: 0603 footprint IPC IHLP-2525CZ-ER-10R-M01 DIODE smd marking R12 smd diode marking 1P smd transistor marking 1p smd transistor marking D3 C3225X7R1E106MT CAPACITOR SMD smd transistor marking u1
Contextual Info: ISL8501EVAL1Z 1A Buck Regulator with Integrated MOSFETs Application Note The ISL8501 is a high-performance, triple output controller that provides a single, high frequency power solution for a variety of point of load applications. The ISL8501 integrates

M2300

Contextual Info: SSM2318GEN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 30V R DS ON 720mΩ ID 1A DESCRIPTION The SSM2318GEN acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC

Contextual Info: 2SK1821-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown High voltage Low driving power Avalanche-proof TO-220F15 Applications Switching regulators

FS2KM-18A

Abstract: B1037 FS2KM fs2km18a
Contextual Info: MITSUBISHI Neh POWER MOSFET FS2KM-18A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 Vd s s 2.8 ± 0 .2 . 9 0 0 V rDS ON (MAX) .7.3Í1

Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2663 N-Channel Enhancement type OUTLINE DIMENSIONS F1E90HVX2 Case : E-pack (Unit : mm) 900V 1A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

WTN9973

Contextual Info: WTN9973 Surface Mount N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.9 AMPERES DRAIN SOURCE VOLTAGE 2,4 DRAIN 60 VOLTAGE 1 GATE 4 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3 SOURCE Features: 1 2 3 SOT-223 *Super high dense cell design for low RDS ON RDS(ON)<80mΩ@VGS=10V

WTC2310

Abstract: N-CHANNEL MOSFET 30V 2A SOT-23
Contextual Info: WTC2310 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 60 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package

WTC2308

Abstract: N-CHANNEL MOSFET 30V 2A SOT-23
Contextual Info: WTC2308 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 AMPERES 3 DRAIN DRAIN SOURCE VOLTAGE 60 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <160 mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement

87D-24S05RT12RNL

Abstract: 100uF capacitor DC converter 24v input 100v output EN55022 Class A capacitor 100uF/100V capacitor 100uF/25V
Contextual Info: Yuan Dean Scientific CO.,LTD 87D SERIES Wide Input Range Dc-Dc Converter Mosfet 15watt FEATURES: ●15Watt Isolated Output ●Recognized By UL 60950-1 ●Singles Dual And Triples. ●Efficiency To 80% ●Remote ON/OFF Control. ●Wide 4:1 Input Range. ●8PIN Package.

Contextual Info: WTC2308 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 AMPERES 3 DRAIN * “G” Lead Pb -Free DRAIN SOURCE VOLTAGE 60 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <160 mΩ@V GS =10V *Rugged and Reliable

WT2310

Contextual Info: WT2310 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 60 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package

Contextual Info: WTC2308 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 AMPERES 3 DRAIN DRAIN SOURCE VOLTAGE 60 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <160 mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement

Contextual Info: WTC2310 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 AMPERS 3 DRAIN * “G” Lead Pb -Free DRAIN SOUCE VOLTAGE 60 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<90mΩ@VGS=10V *Rugged and Reliable *Simple Drive Requirement

WTC2310

Contextual Info: WTC2310 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 60 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=10V *Rugged and Reliable *Simple Drive Requirement *SC-59