POWER 1A 25V MOSFET Search Results

HIP1030AS

Abstract: igbt driver
Contextual Info: 39 HIP1030 PRELIMINARY Apni 1994 1A High Side Driver with Overload Protection Description Features • Over Operating Temperature Range -40°C to +125°C - 1V Max VSAT at 1A - 1A Current Switching Capability - 4.5V to 25V Power Supply Range • Over-Voltage Shutdown Protected

Contextual Info: S HIP 1030 ADVANCE INFORMATION 1A High Side Driver With Over-Load Protection May !992 Features Description • Over Operating Range: -40°C to +125°C - 1V Max at 1A Saturation Voltage - 1A Current Switching Capability - 4.5V to 25V Power Supply Range The HIP1030 is a Power Integrated Circuit designed as a

HIP1030

Abstract: HIP1030AS
Contextual Info: HIP1030 S E M I C O N D U C T O R 1A High Side Driver with Overload Protection December 1994 Features Description o o • Over Operating Temperature Range -40 C to +125 C - 1V Max VSAT at 1A - 1A Current Switching Capability - 4.5V to 25V Power Supply Range

Contextual Info: A Product Line of Diodes Incorporated Green FZT789A 25V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -25V IC = -3A high Continuous Current Low saturation voltage VCE sat < -250mV @ -1A

VN0109N5

Abstract: VN0106N6 VN0109N2 AN-D15 VN0104 VN0104N3 VN0104N6 VN0106 VN0106N3 VN0109
Contextual Info: DMOS Application Note AN-D15 3 Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon. The VN0104/VN0106/VN0109 data sheet was chosen as an

P-channel Dual MOSFET VGS -25V

Abstract: b 1624 transistor P-channel MOSFET VGS -25V
Contextual Info: 0 OPTEK Product Bulletin HCT802 May 1993 Dual Enhancement Mode MOSFET Type HCT802 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source Voltage. 90V

Contextual Info: WTN9575 Surface Mount P-Channel Enhancement Mode Power MOSFET P b Lead Pb -Free DRAIN CURRENT -4.0 AMPERES DRAIN SOURCE VOLTAGE 2,4 DRAIN -60 VOLTAGE 1 GATE Features: 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3 SOURCE * Super high dense cell design for low RDS(ON)

Contextual Info: @.OBIEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package • V ds = 90V • lD o n N-Channel = 1.9A P-Channel = 0.5A • Two devices selected for V ds, switching time, and capacitance

HCT801

Abstract: HCT801TX HCT802 VN0109 VP0109 TRANSISTOR BI 185
Contextual Info: @ . OPTEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source Voltage. 90V

SOP8 Package

Contextual Info: WTK6679 Surface Mount P-Channel Enhancement Mode MOSFET 7 -14 AMPERES 6 D 3 DRAIN CURRENT D S 8 S 2 D S 1 P b Lead Pb -Free DRAIN SOURCE VOLTAGE 5 D 4 G Features: * Super high dense * Cell design for low RDS(ON) * RDS(ON)<10mΩ@VGS = -10V * RDS(ON)<13mΩ@VGS = -4.5V

Contextual Info: 2SK3974-01L,S FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

Contextual Info: 2SK3974-01L,S FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

AP2318GEN

Contextual Info: AP2318GEN Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive D ▼ Small outline package ▼ RoHS Compliant BVDSS 30V RDS ON 720mΩ ID 1A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to

SSD2002

Abstract: DD214 942 rectifier diode
Contextual Info: N & P-CHANNEL POWER MOSFET SSD2002 FEATURES 8SOIC • Extremely Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

27BSC

Abstract: marking 62m
Contextual Info: WTK9410 6 5 D 4 D G 7 3 D S 8 S 2 D S P b Lead Pb -Free 1 Surface Mount N-Channel Enhancement Mode MOSFET DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE Features: * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON)

Contextual Info: 2N7336 IRFG6110 MECHANICAL DATA Dimensions in mm inches 14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS 19.507 ± 0.432 (0.768 ± 0.017) 6.426 ± 0.305 (0.253 ± 0.012) 9.525 ± 0.635 (0.375 ± 0.025) BVDSS 0.457 ± 0.102 (0.018 ± 0.004) 2.134 (0.084)

27BSC

Abstract: marking 62m
Contextual Info: WTK9410 8 D S 7 D S 2 P b Lead Pb -Free 1 Surface Mount N-Channel Enhancement Mode MOSFET 6 D 3 S DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 5 D 4 G Features: * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON)

MOSFET 600V 1A

Abstract: BALLAST CFL
Contextual Info: MPK02N6 N-Channel POWER MOSFET Features 600V, 1A, Typical Rds on = 7Ω Extremely High dv/dt Capability 100% Avalanche Tested New High Voltage Benchmark Gate Charge Minimized Application Low Power Battery Chargers Swith Mode Low Power Supplies Low Power, Ballast, CFL(Compact

AN1332

Abstract: smd transistor marking C14 C5 MARKING smd transistor smd transistor marking 1p T DIODE smd marking R12 smd transistor pinout sot23 MARKING SMD transistor R11 smd transistor marking 1p smd transistor marking sp1 capacitor SM 1206 100uf 6.3V
Contextual Info: ISL8510EVAL1Z 1A Buck Regulator with Integrated MOSFETs Application Note The ISL8510 is a high-performance, triple output controller that provides a single, high frequency power solution for a variety of point of load applications. The ISL8510 integrates

Contextual Info: SSDF9504 23A, 40V, RDS ON 26m -20A, -40V, RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION TO-252-4L The SSDF9504 provide the designer with best combination

smd transistor marking r14

Abstract: 0603 footprint IPC IHLP-2525CZ-ER-10R-M01 DIODE smd marking R12 smd diode marking 1P smd transistor marking 1p smd transistor marking D3 C3225X7R1E106MT CAPACITOR SMD smd transistor marking u1
Contextual Info: ISL8501EVAL1Z 1A Buck Regulator with Integrated MOSFETs Application Note The ISL8501 is a high-performance, triple output controller that provides a single, high frequency power solution for a variety of point of load applications. The ISL8501 integrates

FS2KM18A

Contextual Info: MITSUBISHI Neh POWER MOSFET FS2KM-18A HIGH-SPEED SWITCHING USE FS2KM-18A + • VDSS . 900V • TDS ON (MAX) .7 .3 Q

C320-16

Contextual Info: MITSUBISHI Neh POWER MOSFET FS2AS-14A HIGH-SPEED SWITCHING USE APPLICATION SMPS, DC-DC C onverter, b attery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­ sonal com puter etc. MAXIMUM RATINGS Symbol Tc = 25°C Ratings Unit V dss Drain-source voltage

HCT801TX

Abstract: Dual Enhancement Mode MOSFET
Contextual Info: 0 OPTEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source