POW IC Search Results

Contextual Info: June 1997 ^Ék M icro Linear ML4826 PFC and Dual Output PWM Controller Combo GENERAL DESCRIPTION FEATURES The M L4826 is a high pow er co ntrolle r fo r pow er factor corrected, sw itched mode pow er supplies. PFC allow s the use o f smaller, low er cost b ulk capacitors, reduces pow er

LM391 equivalent

Abstract: lm391 IC LM391 JE182 JE722 OF LM391 550JA
Contextual Info: LM391 & National Semiconductor LM391 Audio Power Driver General Description Features The LM391 audio pow er driver is designed to drive external pow er tra n sisto rs in 10 to 100 w att pow er am plifier designs. High pow er supply voltage operation and true high fidelity

BA5406

Abstract: ba5406 circuit ba5406 amplifier circuit BA328
Contextual Info: Audio ICs 12V/5W dual power amplifier BA5406 The BA5406 is a dual-O TL m o n olith ic pow er IC w ith tw o high-output, lo w -frequ en cy pow er am plifiers. W ith a 12V pow er supply, it has a rated ou tput of 5W X 2 into a 3 0 load, and w ith a 9V pow er supply, it has a rated o u tp u t of

BUK436-200A

Abstract: BUK436-200B T0247
Contextual Info: Product Specification Philips Sem iconductors Pow erM O S tran sisto r G ENERAL DESCRIPTION N -channel enh an cem en t m ode field-effect pow er tran sistor in a plastic envelope. The device is intended for use in Sw itched M ode Pow er Supplies SM PS , m otor control, w elding,

Contextual Info: T O SH IB A TENTATIVE TPD1030F TO SH IBA INTELLIGENT POW ER DEVICE SILICON POW ER MOS IC MODULE TPD1030F 2-IN-1 LOW-SIDE SWITCH MODULE FOR MOTOR, SOLENOID AND LAMP DRIVE TPD1030F is a 2-IN-1 pow er switch m odule for low-side switch. The IC has a vertical MOSFET output which can be directly

Contextual Info: a FEATURES +5 V, ؎5 V Pow er Supplies Ultralow Pow er Dissipation <0.5 ␮W Low Leakage (<100 pA) Low On Resistance (<50 ⍀) Fast Sw itching Times Low Charge Injection TTL/ CM OS Compatible TSSOP Package APPLICATIONS Battery Pow ered Instruments Single Supply Systems

Contextual Info: L 7C 108/109 mm D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 128K x 8 Static RAM w ith Chip Select Pow erdow n, O utput Enable □ A uto-Pow erdow n Design □ A dvanced CM O S Technology □ High Speed — to 15 ns maximum □ Low Pow er Operation

pow-r-blok

Abstract: WESTINGHOUSE POW-R-BLOK Westinghouse module powerex pow-r-blok Westinghouse Power rectifier CS412499
Contextual Info: Ts 7294621 POWEREX INC » F | 7 5 cmbai ooooaat i | POW-R-BLOK ASSEMBLIES Rectifier POW-R-BLOK The PO W -R -BLO K combines multiple pow er semiconductor devices in a single, electrically isolated module. Cost effec­ tive packaging is made possible by W esting house's proprietary glass

amperex transmitting

Abstract: 300 watts amplifier Amperex Scans-0017356
Contextual Info: AMPEREX TRANSMITTING T UBE 203-H FULLY INTERCHANGEABLE WITH HF-125 R.F. Pow er Am plifier, Oscillator, A.F. Pow er Am plifier, M odulator ^ IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIM ^ MAXIMUM RATINGS AND TYPICAL

1500 watt audio amplifier

Abstract: 3000 watts audio amplifier 800 watts audio amplifier 279-A-AMPEREX 800 watt audio amplifier 1000 WATTS AMPLIFIER 500 watt amplifier 500 watts power amplifier 500 watt audio amplifier audio power amplifier 500 watt
Contextual Info: AMPEREX TRANSMITTING T UBE 279-A Radio Frequency Pow er Am plifier or Oscillator Audio Frequency Pow er Am plifier or M odulator ^ ^ MAXIMUM RATINGS AND TYPICAL OPERATING CONDITIONS

Contextual Info: APT5020BVR • R A dvanced W .\A pow er Te c h n o l o g y “ soov 26a 0.200Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

Contextual Info: L7C185 D E V IC F S IN C O R P O R A I h l ' FEATURES □ 8K x 8 Static R A M w ith C hip Select Pow erd ow n, O utpu t Enable □ A uto-Pow erdow n Design □ A dvanced C M O S Technology □ H igh Sp eed — to 12 ns m axim um □ Low Pow er O peration

Contextual Info: • R A dvanced W .\A APT10086B VR pow er Te c h n o lo g y " 1000v i 3a 0.860Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

Contextual Info: • R A dvanced W .\A APT20M38BVR pow er Te c h n o l o g y “ 200V 67a o.o 38q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

2SA748

Abstract: 2SC1398
Contextual Info: Pow er T ransistors 2SA748 2SA748 Silicon PNP Epitaxial Planar Type Package D im ensions M edium Pow er A m p lifie r C om plem entary Pair w ith 2SC 1398 Unit : mm 10.5 ± 0 .5 • Features s 9.8max. Ol« • Large collector pow er dissipation P c rtt-H

transistor wu1

Contextual Info: 5V, 250mA Voice Coil Motor Driver with H-bridge and Head Retraction Circuitry Description The CS-7100 is a voice coil pow er driver intended for use in 5V 2.5 inch hard disk servo systems. The CS-7100 contains the complete H-Bridge pow er amplifier, including the 4 pow er transistors, and all

epm7032v

Contextual Info: Features. □ □ Preliminary Information □ □ □ □ □ 3.3-V version of the popular EPM7032 EPLD Combinatorial speeds with tPD = 12 ns Clock frequencies up to 90.9 M Hz Innovative pow er-saving features 30% to 50% pow er savings over 5-V operation Power-down m ode controlled by a pow er-down pin to allow

AXOV

Abstract: am di he ne
Contextual Info: Pow er m etal film resistors PPR R 1W /2W FEA TU R ES • H igh pow er in sm allpackages • A vailable w ide range to autom atic insertion m achine A PPLIC A TIO N S •A llgeneralpurpose pow er applications. D ESC R IPTIO N TYPE A hom ogeneous film of m etalalloy

1000 WATTS AMPLIFIER

Abstract: 80 watts power amplifier amperex 212 amperex transmitting Amperex Scans-0017355 100 watts power amplifier
Contextual Info: AMPEREX TRANSMITTING TUBE 203-A R.F. Pow er Am plifier, O scillator, A.F. Pow er Am plifier, M odulator ^ iiiiiiiim iiiiiiiiiiiiiiiiiiiim iiiiim MAXIMUM RATINGS AND TYPICAL I OPERATING CONDITIONS GENERAL CHARACTERISTICS

L7C19935

Abstract: L7C199PI25 IDT71256
Contextual Info: L7C199 32K x 8 Static RAM Low Power FEATURES DESCRIPTION □ 32K x 8 Static RAM with Chip Select Pow erdow n, O utput Enable □ Auto-Pow erdow n D esign □ A dvanced CM O S Technology □ H igh Speed — to 15 ns m axim um □ Low Pow er Operation Active:

marking code c 9 toshiba

Abstract: nch power mosfet Power MOSFET, toshiba TPD7100F HIGH POWER MOSFET TOSHIBA
Contextual Info: TOSHIBA TENTATIVE TPD7100F TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTEGRATED CIRCUIT TPD7100F 2ch HIGH-SIDE N-ch POWER MOSFET GATE DRIVER The TPD7100F is a 2ch High-side N-ch Power MOSFET Gate Driver. This IC contains a pow er MOSFET driver and pow er

Contextual Info: ADVANCE MT5C4116 SRAM 256Kx 16 SRAM WITH OUTPUT ENABLE FEATURES • High speed: 12, 15 and 17ns • H igh-perform ance, low -pow er, CM O S double-m etal process • M ultiple center pow er and ground pins • Single +5V ± 1 0 ^ pow er supply • Easy m em ory expansion w ith CE and OE options

Contextual Info: TOSHIBA TPD1008SA TO SH IBA INTELLIGENT POW ER DEVICE SILICON M ONOLITHIC POW ER MOS INTEGRATED CIRCUIT TPD1008SA HIGH-SIDE POWER SWITCH for MOTORS, SOLENOIDS, and LAMP DRIVERS TPD1008SA is a m onolithic power IC for high-side switches. The IC has a vertical MOS FET output which can

BZTO3-C

Abstract: bzto3c BZTO3
Contextual Info: Te m ic BZT03C. TELEFU N K EN Semiconductors Silicon Z-Diodes Features • G lass passivated junction • H erm etically sealed package • C lam ping tim e in p icosecon d s Applications M edium pow er voltage regulators and medium pow er transient suppression circuits