AT35700
Abstract: atmel 1505
Contextual Info: Standard Features • • • • • • • • • 5.0V low-leakage CMOS transistors 17V and 40V high-voltage LDMOS transistors High-density, double-poly memory cell Isolated NMOS and LDMOS transistors Analog Resistors Dual Poly Capacitor Mono-silicon capacitors
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cmos transistor 0.35 um
Abstract: 0.35Um c035 ZENER C035 5V IMD2 transistor bsim3v3 polysilicon 20v zener diode 3.3v zener C035
Contextual Info: 0.35µ µm 5V / 3.3V CMOS Process ID: SL [C035] Applications Main Process Flow • Interfacing high density industry- • P Substrate standard 0.35um core logic to 5V • LOCOS Field Oxidation
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cmos transistor 0.35 um0.35umc035 zenerc035 5v+6imd2 transistorbsim3v3polysilicon20v zener diode3.3v zenerc035
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bsim3
Abstract: ZARLINK SEMICONDUCTOR ON SEMICONDUCTOR 613 C035 0.35uM 5V C035 5V
Contextual Info: 0.35µ µm 3.3V CMOS Process ID: SJ/SK [C035] Applications Main Process Flow • Mixed signal embedded systems / • P Substrate systems on a chip SOC . • LOCOS Field Oxidation • High precision mixed signal circuits.
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bsim3zarlink semiconductoron semiconductor 613c035+20.35um 5vc035 5v
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SG 1050
Abstract: C06 60V polysilicon fuse
Contextual Info: 0.6µ µm 60V CMOS Process ID: SG [C06] Applications Main Process Flow • Automotive, including 42V standard. • P Substrate • HV Well Formation • LOCOS Field Oxidation • Twin Retrograde Wells
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sg 1050c06 60vpolysilicon fuse |
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bsim3
Abstract: mos transistor ON SEMICONDUCTOR 613
Contextual Info: 0.6µ µm 5V CMOS Process ID: SC/SD [C06] Applications Main Process Flow • Mixed signal embedded systems / • P Substrate systems on a chip SOC . • Twin Wells • High precision mixed signal circuits.
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bsim3mos transistoron semiconductor 613 |
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C1206
Abstract: C1221
Contextual Info: ISO 9001 Registered Process C1221 BiCMOS 1.2µm High Resistance Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage
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transistor k 2761
Abstract: C1206 TRANSISTOR C1206
Contextual Info: ISO 9001 Registered Process C1206 BiCMOS 1.2µm 6.4GHz Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage
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c1206c1206-4-98transistor k 2761transistor c1206 |
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LOCOS
Abstract: ON SEMICONDUCTOR 613 poly dielectric capacitor 95nm poly1 poly2 resistor
Contextual Info: 0.5µ µm 3.3V CMOS Process ID: SH [C05] Applications Main Process Flow • Mixed signal embedded systems / • P Substrate systems on a chip SOC . • N Well • High precision mixed signal circuits.
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locoson semiconductor 613poly dielectric capacitor95nm+1poly1 poly2 resistor
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C1029
Contextual Info: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage
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transistor k 2761
Abstract: k 2761 transistor poly silicon resistor C1230 hfe 118 transistor 338 transistor A 2761 poly1 poly2 resistor C1206 cox 15um
Contextual Info: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage
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c1230transistor k 2761k 2761 transistorpoly silicon resistor+6hfe 118transistor 338transistor a 2761poly1 poly2 resistorc1206cox 15um
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transistor k 2761
Abstract: C1230 C1206
Contextual Info: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage
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c1230c1230-4-98transistor k 2761c1206 |
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bsim3v3
Abstract: C035ANV IMD2 transistor pmos Vt poly dielectric capacitor
Contextual Info: ANV Process ID: SM/SN [C035ANV] Applications Main Process Flow Situations where single-cell operation or • P Substrate extended battery life are key, e.g: • High Voltage Wells optional
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c035anvbsim3v3imd2 transistorpmos vt+1poly dielectric capacitor
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C1230
Abstract: transistor k 2761 poly silicon resistor k 2761 transistor k 351 transistor C1206
Contextual Info: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage
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c1230transistor k 2761poly silicon resistork 2761 transistor+2k 351 transistorc1206
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c1028 transistor
Abstract: c1028
Contextual Info: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor
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c1028c1028-4-9865x65c1028 transistor |
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C1206
Abstract: C1221 100x100um
Contextual Info: ISO 9001 Registered Process C1221 BiCMOS 1.2µm High Resistance Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage
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C1206
Contextual Info: ISO 9001 Registered Process C1206 BiCMOS 1.2µm 6.4GHz Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage
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c1028
Contextual Info: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor
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C1028
Abstract: c1028 transistor
Contextual Info: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor
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c102865x65c1028 transistor |
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C1029
Contextual Info: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage
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vertical pnp bjt
Abstract: 1000 hz cmos Image Sensors CMOS Process Family XO035 1P3M X-Fab 18VERTICAL BSIM3v3.2 VTB photo diodes
Contextual Info: 0.35 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XO035 Modular CMOS Technology For Fast Optical Applications XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. Module Overview CORE MOS It is especially suited for applications needing
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xo035405nm650nmvertical pnp bjt+71000 hz cmos image sensorscmos process family1p3mx-fab18verticalbsim3v3.2vtb photo diodes
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c1027 transistor
Abstract: transistor c1027 C1027 C-1027 transistor npn c1027 transistor equivalent c1027 transistor c1027 equivalent
Contextual Info: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted
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c1027100x1100x10065x65+6c1027 transistortransistor c1027c-1027transistor npn c1027transistor equivalent c1027transistor c1027 equivalent
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transistor c1027
Abstract: C1027 c1027 transistor transistor equivalent c1027 C-1027 transistor c1027 equivalent transistor npn c1027 transistor c1027 equivalents
Contextual Info: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted
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c1027100x1100x100c1027-4-98+865x65transistor c1027c1027 transistortransistor equivalent c1027c-1027transistor c1027 equivalenttransistor npn c1027transistor c1027 equivalents
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c1027 transistor
Abstract: transistor c1027 C1027 transistor equivalent c1027 transistor c1027 equivalent C-1027
Contextual Info: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted
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c1027100x1100x10065x65+5c1027 transistortransistor c1027transistor equivalent c1027transistor c1027 equivalentc-1027
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BR-1196
Abstract: BR1196 CAPACITOR 100 nano FARAD 25 VOLT ST37 0.1 micro farad capacitor 10 pico farad capacitor 1 micro farad capacitor 50 VOLT milli farad capacitor BR119 ST-37
Contextual Info: DIVISION DOCUMENT#-rev-# SEMICONDUCTEURS BROMONT, QUÉBEC PAGE # spe020.4 1 de 4 PARAMETERS PROCUREMENT SPECIFICATION FOR THE 5 VOLTS 1.2 µm PROCESS FAMILY TITRE CRÉATEUR FRANÇOIS PELLETIER RÉV DATE 1 2 25-04-94 21-04-95 ACI BR-952 BR-1196 DESCRIPTION
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spe020br-952br-1196vtptn50x1+14isub50n16-jul-95br-1241frm-008-rev-3\0-mitel\doc\spe\spe020br1196capacitor 100 nano farad 25 voltst370.1 micro farad capacitor10 pico farad capacitor1 micro farad capacitor 50 voltmilli farad capacitorbr119st-37
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