POLY1 POLY2 RESISTOR Search Results

POLY1 POLY2 RESISTOR Result Highlights (4)

Part	Manufacturer	Description
TMP392A2DRLR	Texas Instruments	TMP392 dual-channel (hot & warm), resistor-programmable temperature switch
TMP392A3DRLR	Texas Instruments	TMP392 dual-channel (hot & warm), resistor-programmable temperature switch
TIPD128	Texas Instruments	Capacitive Load Drive Verified Reference Design Using an Isolation Resistor
TPS2066DGN-1	Texas Instruments	Current-Limited, Power-Distribution Switches with Output Discharge resistor 8-MSOP-PowerPAD -40 to 85

POLY1 POLY2 RESISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AT35700 Abstract: atmel 1505 Contextual Info: Standard Features • • • • • • • • • 5.0V low-leakage CMOS transistors 17V and 40V high-voltage LDMOS transistors High-density, double-poly memory cell Isolated NMOS and LDMOS transistors Analog Resistors Dual Poly Capacitor Mono-silicon capacitors	Original	AT35700, AT35700 atmel 1505	PDF
cmos transistor 0.35 um Abstract: 0.35Um c035 ZENER C035 5V IMD2 transistor bsim3v3 polysilicon 20v zener diode 3.3v zener C035 Contextual Info: 0.35µ µm 5V / 3.3V CMOS Process ID: SL [C035] Applications Main Process Flow • Interfacing high density industry- • P Substrate standard 0.35um core logic to 5V • LOCOS Field Oxidation	Original		PDF
bsim3 Abstract: ZARLINK SEMICONDUCTOR ON SEMICONDUCTOR 613 C035 0.35uM 5V C035 5V Contextual Info: 0.35µ µm 3.3V CMOS Process ID: SJ/SK [C035] Applications Main Process Flow • Mixed signal embedded systems / • P Substrate systems on a chip SOC . • LOCOS Field Oxidation • High precision mixed signal circuits.	Original		PDF
SG 1050 Abstract: C06 60V polysilicon fuse Contextual Info: 0.6µ µm 60V CMOS Process ID: SG [C06] Applications Main Process Flow • Automotive, including 42V standard. • P Substrate • HV Well Formation • LOCOS Field Oxidation • Twin Retrograde Wells	Original		PDF
bsim3 Abstract: mos transistor ON SEMICONDUCTOR 613 Contextual Info: 0.6µ µm 5V CMOS Process ID: SC/SD [C06] Applications Main Process Flow • Mixed signal embedded systems / • P Substrate systems on a chip SOC . • Twin Wells • High precision mixed signal circuits.	Original		PDF
C1206 Abstract: C1221 Contextual Info: ISO 9001 Registered Process C1221 BiCMOS 1.2µm High Resistance Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage	Original	C1221 C1221 C1206	PDF
transistor k 2761 Abstract: C1206 TRANSISTOR C1206 Contextual Info: ISO 9001 Registered Process C1206 BiCMOS 1.2µm 6.4GHz Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage	Original	C1206 C1206 C1206-4-98 transistor k 2761 TRANSISTOR C1206	PDF
LOCOS Abstract: ON SEMICONDUCTOR 613 poly dielectric capacitor 95nm poly1 poly2 resistor Contextual Info: 0.5µ µm 3.3V CMOS Process ID: SH [C05] Applications Main Process Flow • Mixed signal embedded systems / • P Substrate systems on a chip SOC . • N Well • High precision mixed signal circuits.	Original		PDF
C1029 Contextual Info: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage	Original	C1029 65x65 C1029	PDF
transistor k 2761 Abstract: k 2761 transistor poly silicon resistor C1230 hfe 118 transistor 338 transistor A 2761 poly1 poly2 resistor C1206 cox 15um Contextual Info: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage	Original	C1230 C1230 transistor k 2761 k 2761 transistor poly silicon resistor hfe 118 transistor 338 transistor A 2761 poly1 poly2 resistor C1206 cox 15um	PDF
transistor k 2761 Abstract: C1230 C1206 Contextual Info: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage	Original	C1230 C1230 C1230-4-98 transistor k 2761 C1206	PDF
bsim3v3 Abstract: C035ANV IMD2 transistor pmos Vt poly dielectric capacitor Contextual Info: ANV Process ID: SM/SN [C035ANV] Applications Main Process Flow Situations where single-cell operation or • P Substrate extended battery life are key, e.g: • High Voltage Wells optional	Original	C035ANV] bsim3v3 C035ANV IMD2 transistor pmos Vt poly dielectric capacitor	PDF
C1230 Abstract: transistor k 2761 poly silicon resistor k 2761 transistor k 351 transistor C1206 Contextual Info: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage	Original	C1230 C1230 transistor k 2761 poly silicon resistor k 2761 transistor k 351 transistor C1206	PDF
c1028 transistor Abstract: c1028 Contextual Info: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor	Original	C1028 C1028-4-98 65x65 c1028 transistor c1028	PDF

C1206 Abstract: C1221 100x100um Contextual Info: ISO 9001 Registered Process C1221 BiCMOS 1.2µm High Resistance Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage	Original	C1221 C1221 C1221-4-98 C1206 100x100um	PDF
C1206 Contextual Info: ISO 9001 Registered Process C1206 BiCMOS 1.2µm 6.4GHz Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage	Original	C1206 C1206 C1206-4-98	PDF
c1028 Contextual Info: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor	Original	C1028 65x65 c1028	PDF
C1028 Abstract: c1028 transistor Contextual Info: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor	Original	C1028 65x65 C1028 c1028 transistor	PDF
C1029 Contextual Info: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage	Original	C1029 C1029-4-98 65x65 C1029	PDF
vertical pnp bjt Abstract: 1000 hz cmos Image Sensors CMOS Process Family XO035 1P3M X-Fab 18VERTICAL BSIM3v3.2 VTB photo diodes Contextual Info: 0.35 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XO035 Modular CMOS Technology For Fast Optical Applications XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. Module Overview CORE MOS It is especially suited for applications needing	Original	XO035 XO035 405nm 650nm vertical pnp bjt 1000 hz cmos Image Sensors CMOS Process Family 1P3M X-Fab 18VERTICAL BSIM3v3.2 VTB photo diodes	PDF
c1027 transistor Abstract: transistor c1027 C1027 C-1027 transistor npn c1027 transistor equivalent c1027 transistor c1027 equivalent Contextual Info: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted	Original	C1027 100x1 100x100 65x65 c1027 transistor transistor c1027 C1027 C-1027 transistor npn c1027 transistor equivalent c1027 transistor c1027 equivalent	PDF
transistor c1027 Abstract: C1027 c1027 transistor transistor equivalent c1027 C-1027 transistor c1027 equivalent transistor npn c1027 transistor c1027 equivalents Contextual Info: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted	Original	C1027 100x1 100x100 C1027-4-98 65x65 transistor c1027 C1027 c1027 transistor transistor equivalent c1027 C-1027 transistor c1027 equivalent transistor npn c1027 transistor c1027 equivalents	PDF
c1027 transistor Abstract: transistor c1027 C1027 transistor equivalent c1027 transistor c1027 equivalent C-1027 Contextual Info: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted	Original	C1027 100x1 100x100 65x65 c1027 transistor transistor c1027 C1027 transistor equivalent c1027 transistor c1027 equivalent C-1027	PDF
BR-1196 Abstract: BR1196 CAPACITOR 100 nano FARAD 25 VOLT ST37 0.1 micro farad capacitor 10 pico farad capacitor 1 micro farad capacitor 50 VOLT milli farad capacitor BR119 ST-37 Contextual Info: DIVISION DOCUMENT#-rev-# SEMICONDUCTEURS BROMONT, QUÉBEC PAGE # spe020.4 1 de 4 PARAMETERS PROCUREMENT SPECIFICATION FOR THE 5 VOLTS 1.2 µm PROCESS FAMILY TITRE CRÉATEUR FRANÇOIS PELLETIER RÉV DATE 1 2 25-04-94 21-04-95 ACI BR-952 BR-1196 DESCRIPTION	Original	spe020 BR-952 BR-1196 VTPTN50x1 ISUB50N1 6-JUL-95 BR-1241 FRM-008-REV-3 \0-mitel\doc\spe\spe020 BR-1196 BR1196 CAPACITOR 100 nano FARAD 25 VOLT ST37 0.1 micro farad capacitor 10 pico farad capacitor 1 micro farad capacitor 50 VOLT milli farad capacitor BR119 ST-37	PDF

POLY1 POLY2 RESISTOR Search Results

POLY1 POLY2 RESISTOR Result Highlights (4)

POLY1 POLY2 RESISTOR Datasheets Context Search

AT35700

cmos transistor 0.35 um

bsim3

SG 1050

bsim3

C1206

transistor k 2761

LOCOS

C1029

transistor k 2761

transistor k 2761

bsim3v3

C1230

c1028 transistor

C1206

C1206

c1028

C1028

C1029

vertical pnp bjt

c1027 transistor

transistor c1027

c1027 transistor

BR-1196