PNP TRANSISTOR D 640 Search Results

BFQ34T

Abstract: BFQ54T philips MATV amplifiers 25c2570 Philips MBB MBB339 638 transistor
Contextual Info: Philips Semiconductors bbS3^3]i 0 0 3 1 5 ^ 1 3bT BBAPX Product specification PNP 4 GHz wideband transistor ^ ^ N DESCRIPTION A ME R BFQ54T P H IL IP S /D IS C R E T E b^E ]> PINNING PNP transistor in a plastic SOT37 package. PIN It is primarily intended for use in

Contextual Info: S A M S UN G SEMICONDUCTOR INC 14E D I 7^4142 0007370 2 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA64 T -2 9 -2 9 DARLINGTON TRANSISTOR • C ollector-Em itter Voltage: Vc*s =30V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

639 TRANSISTOR PNP

Abstract: BFQ34T TRANSISTOR P 3 BFQ54T philips MATV amplifiers GHz PNP transistor MEA336
Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFQ54T PHILIPS INTERNATIONAL D E S C R IP T IO N P N P transistor in a plastic S O T 3 7 package. It is primarily intended for use in M A TV and m icrowave amplifiers such a s in aerial amplifiers, radar

Contextual Info: BC639/640 Transistors NPN Monolithic Transistor Pair Number of Devices2 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A) P(D) Max. (W)1.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.

LT 5251

Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
Contextual Info: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >

614L

Abstract: step down Voltage Regulator 230 volt to 150 volt
Contextual Info: 5V, 300mA Linear Regulator with RESET and ENABLE D escription The CS-8120 is a 5V, 300mA precision linear regulator with two microproces­ sor compatible control functions and protection circuitry included on chip. The composite NPN-PNP output pass transistor assures a lower dropout volt­

Contextual Info: 3EE D Bi A23b3S0 DGl?GbS 1 H S I P PNP Silicon RF Transistor BFT 92 SIEMENS/ SPCLi SEMICONDS _ • For broadband amplifiers up to 2 G Hz at collector currents up to 20 mA. • Complementary type: BFR 92P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions!

2S8624

Abstract: BV4 transistor
Contextual Info: 2 S B 6 2 4 .2 S B 6 2 4 R Audio Frequency Power Amplifier PNP Silicon Epitaxial Transistor • C o m p lim e n ta ry to 2 S D 5 9 6 , 2 S D 5 9 6 R P A C K A G E D IM E N S IO N S • High D C C u rre n t G ain: h FE = 2 0 0 T Y P . V CE = - 1 .0 V , lc !

BC635 ECB

Abstract: BC638
Contextual Info: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

Contextual Info: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS T a = 25 1C Sym bol C h aracte ristic Collector Emitter Voltage at R b e = 1 Kohm Collector Emitter Voltage Collector Emitter Voltage

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC 635/637/639 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter Voltage atR eE=1Kohm C ollecto r E m itter Voltage C ollecto r E m itter Voltage

Bc636

Abstract: BC640 639 TRANSISTOR PNP BC635 BC638
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC 635/637/639 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter Voltage at R b e = 1 Kohm C ollecto r E m itter Voltage

ca3096

Abstract: CA3096AE
Contextual Info: HARRIS SEIUCOND SECTOR b lE D • 43G 2271 TTT ■ IHAS CA3096 HARRIS S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Description Applications • D 047D 13 The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

Bc636

Abstract: BC640 639 TRANSISTOR PNP BC638 pnp bc636 transistor
Contextual Info: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • C o m p le m e n t to BC635/637/639 ABSOLUTE MAXIMUM RATINGS Ta= 25°C 1 Sym bol Characteristic C o llecto r Emitter Voltage: BC636 a t R BE = 1Kohm : BC638 V cE R : BC640

ca3096

Abstract: CA3096AE 639 TRANSISTOR PNP CA3096E
Contextual Info: ui H A R R CA3096 I S S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • F ive-Independent Transistors The CA3096C, CA3Û96, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

triac tic 236

Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Contextual Info: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD

639 TRANSISTOR PNP

Abstract: 638 transistor bc636 npn transistor bc640 transistor bC640 OF CDIL transistor C 639 W BC639-BC640 NPN transistor 500ma TO-92 ts 4141 TRANSISTOR BC635
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB

sc74750

Abstract: MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921
Contextual Info: Discretes For Bipolar Transistors and Discrete MOSFETs please check the Power Management Chapter, pages 189-239. For RF Consumer Products please find following tables in the RF Products Chapter from page 252 onwards: RF PIN diodes RF Bandswitch diodes RF Varicap diodes

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB

NPN Silicon Epitaxial Planar Transistor to92

Abstract: BC639-BC640 Transistor BC637 or BC639 BC635 BC636 BC637 BC638 BC639 BC640 transistor C 639 W
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC635/637/639 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector Em itter Voltage at R be =1 Kohm C ollector Em itter Voltage C ollector Em itter Voltage

MOSFET TRANSISTOR SMD MARKING CODE A1

Abstract: transistor smd yw PMEM4020AND PMEM4020APD MARKING CODE SMD IC marking code D3 SOT457 13707 PNP TRANSISTOR marking pr smd transistor marking D3
Contextual Info: PMEM4020APD PNP transistor/Schottky rectifier module Rev. 01 — 4 October 2004 Product data sheet 1. Product profile 1.1 General description Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457

PCF7952

Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
Contextual Info: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.