PNP DARLINGTON VCE 120V Search Results

marking 705

Abstract: Zetex T 705 TRANSISTOR MARKING 705 FCX705 FCX705TA
Contextual Info: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at

Contextual Info: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at

FCX705

Abstract: FCX705TA
Contextual Info: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at

marking 1F7

Abstract: ZXTN04120HFF TS16949 ZXTP05120HFF ZXTP05120HFFTA
Contextual Info: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications

Contextual Info: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications

Zetex T 705

Contextual Info: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUM M ARY V CEO=120V; V CE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at

2SB1382

Abstract: transistor 12v 8A 2SD2082 pnp darlington VCE 120V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 2000( Min.) @(IC= -8A, VCE= -4V) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA)

2SB1105

Abstract: 2SD1605
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) ·Complement to Type 2SD1605

2SB1340

Abstract: 2SD1889
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1889 APPLICATIONS

2sb1383

Abstract: 2sd2083 transistor IC 12A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain : hFE= 2000 Min. @ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083

2sd2083

Abstract: 2SB1383 transistor 2sd2083 2sb1383 equivalent equivalent 2sb1383 transistor IC 12A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain : hFE= 2000 Min. @ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083

2SB1402

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) APPLICATIONS ·Designed for low frequency power amplifier applications.

PNP TRANSISTOR 1k

Abstract: transistor 20a COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS MJ11015 MJ11016
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A

2SB727

Abstract: 2SD768
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -3A

2SD864

Abstract: 2SB765
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -1.5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -1.5A

120v 10a transistor

Abstract: DARLINGTON -5A 100v pnp 2SB955 2SD1126
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -5A

2SB1502 TRANSISTOR

Abstract: 2SB1502 2SD2275
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -4A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -4A ·Complement to Type 2SD2275 APPLICATIONS

2SB1259

Abstract: 2sb125 2SD2081
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 2000 Min @ (VCE= -4V, IC= -5A) ·Large Current Capability ·Complement to Type 2SD2081 APPLICATIONS ·Driver for solenoid,relay and motor and general purpose

STA408A

Abstract: sta400
Contextual Info: STA408A PNP Darlington General purpose Absolute maximum ratings External dimensions D Electrical characteristics Ta=25°C Ratings Unit Symbol VCBO –120 V ICBO VCEO –120 V IEBO VEBO –6 V VCEO –120 IC –4 A hFE 2000 –1 A VCE(sat) –1.5 V VBE(sat)

STA308A

Abstract: sta308
Contextual Info: STA308A Absolute maximum ratings PNP Darlington General purpose External dimensions C Ta=25°C Specification min typ max Ratings Unit Symbol VCBO –120 V ICBO VCEO –120 V IEBO VEBO –6 V VCEO –120 IC –4 A hFE 2000 –1 A VCE(sat) –1.5 V VBE(sat)

STA308A

Abstract: sta308 STA300
Contextual Info: STA308A Absolute maximum ratings PNP Darlington General purpose External dimensions C Ta=25°C Specification min typ max Ratings Unit Symbol VCBO –120 V ICBO VCEO –120 V IEBO VEBO –6 V VCEO –120 IC –4 A hFE 2000 –1 A VCE(sat) –1.5 V VBE(sat)

SMA4030

Contextual Info: SMA4030 Absolute maximum ratings PNP Darlington General purpose External dimensions B Electrical characteristics Ta=25°C Ratings Unit Symbol VCBO 120 V ICBO VCEO 100 V IEBO VEBO 6 V VCEO 100 IC 3 A hFE 2000 ICP 5 (PW≤1ms, Du≤50%) A VCE(sat) 1.1 1.5

2SB1502

Contextual Info: ^ , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1502 Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain: hFE= 5000(Min)@lc= -4A • Low-Collector Saturation Voltage: Vce(sat)= -2.5V(Max.)@lc= -4A

MJ11032

Abstract: MJ11033 transistor MJ11032
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to Type MJ11032