|
2SK3152-E
|
|
Renesas Electronics Corporation
|
Nch Single Power Mosfet 120V 10A 130Mohm To-220Fm |
|
|
|
TTC5886A
|
|
Toshiba Electronic Devices & Storage Corporation
|
NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
|
|
|
TTA2097
|
|
Toshiba Electronic Devices & Storage Corporation
|
PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
|
|
|
XPQR8308QB
|
|
Toshiba Electronic Devices & Storage Corporation
|
N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL |
|
|
|
XPQ1R00AQB
|
|
Toshiba Electronic Devices & Storage Corporation
|
N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL |
|
|
|
TK190U65Z
|
|
Toshiba Electronic Devices & Storage Corporation
|
MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL |
|
|
