PNP 2SD Search Results

mx 2sb834

Abstract: 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073
Contextual Info: TO-220 PACKAGE MX MICROELECTRONICS ● Applied widely for TV,Av,power amplifiers power drive e.c.t. Pd TYPE NPN *Tc= OR 25℃ W PNP 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 BUT11 BUT11A PNP NPN NPN PNP NPN NPN NPN PNP NPN NPN NPN ICBO

2SD401A

Abstract: 2SB546A 60L120
Contextual Info: ÆàMOSPEC PNP SILICON POWER TRANSISTORS PNP 2SB546A . designed for use in general purpose power amplifier,vertical output application FEATURES: * Collector-Emitter Voltage VCEo= 150V Min * DC Current Gain hFE= 40-200@lc= 400mA * Complementary to NPN 2SD401A

Contextual Info: UTC 2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Complement to 2SD1616/A APPLICATIONS * Audio Frequency Power Amplifier * Medium Speed Switching 1 TO-92 1: Emitter 2: Collector 3: Base ABSOLUTE MAXIMUM RATINGS Ta=25°C

Contextual Info: Ordering num ber: EN3714 2SB1508/2SD2281 No.3714 PNP/NPN Epitaxial Planar Silicon Transistors 50V/12A Switching Applications Applications • Relay drivers, high-speed inverters, converters. Features • Low collector-to-emitter saturation voltage: VcE sat = —0.5V(PNP), 0.4V(NPN)max.

Contextual Info: 2SB1732 / 2SB1709 Datasheet PNP -1.5A -12V Middle Power Transistor lOutline Parameter Value TUMT3 -12V -1.5A VCEO IC TSMT3 Collector Collector Base Base Emitter Emitter 2SB1709 SC-96 2SB1732 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SD2702, 2SD2674

50W AMP 2SD718 2SB688

Abstract: 2SB688 2SD718 FC-7 3P transistor 2sd718 transistor 2SB688 2sd718 amplifier RS3100 m0spec
Contextual Info: Æ&m o s p e c HIGH-POWER PNP SILICON POWER TRANSISTORS PNP .designed for use in general-purpose amplifier and switching application . 2SB688 FEATURES: * Recommend for 45 - 50W Audio Frequency Amplifier Output stage. * Complementary to 2SD718 8 AMPERE POWER

2SB713

Abstract: transistor npn 100w amplifier 2SD751
Contextual Info: PANASONIC INDL/ELEK -CIO 15E D • t,=132852 0DlD4tl 1 Silicon Epitaxal Base Mesa Transistor 2SB713 PNP 2SD751 (NPN) TOP-3 Package (See Page 36 For Dimensions) 2SB713 (PNP) Absolute Maximum Ratings (Ta=25°C) Hem Collector-Base Voltage Collector-Emitter Voltage

EN3716

Abstract: 2039A 2SB1511
Contextual Info: Ordering num ber: EN3716 2SB1511/2SD2285 PNP/NPN Epitaxial Planar Silicon Transistors No.3716 30V/20A Switching Applications Qm< o Applications • Relay drivers, high-speed inverters, converters. Features • Low collector-to-emitter saturation voltage : VcE sat = ••0.5V(PNP), 0.4VCNPN) max.

nec 2501

Abstract: ic nec 2501 2SB1572 2SD2403
Contextual Info: DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SB1572 PNP SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Low VCE(sat): VCE(sat)1 ≤ −0.4 V • Complementary to 2SD2403 4.5±0.1 1.6±0.2 C E 0.42 ±0.06 1.5 B 0.47 ±0.06 3.0 2.5±0.1

ic nec 2501

Abstract: NEC 2501 2SB1571 2SD2402
Contextual Info: DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SB1571 PNP SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES • Low VCE(sat): VCE(sat)1 ≤ −0.35 V • Complementary to 2SD2402 4.5±0.1 1.6±0.2 C E 0.42 ±0.06 1.5 B 0.47 ±0.06 3.0 4.0±0.25

2SB920

Abstract: 2SD1236
Contextual Info: 2SB920/2SD1236 PNP/NPN Epitaxial Planar-Type Sili con Transister For General Purpose Large-Current Switching satures: * Very Low Collector Saturation Voltage:VCE sat =-0.5V(PNP),0.4V(NPN)max. * Wide Safety Operation Area . ( ) is for 2SB920, the description other than which are common to 2SB920,2SD1236.

Contextual Info: 2SB776 2SD886 2SB776 PNP Epitaxial Planar Transistors 2SD886 NPN Epitaxial Planar Transistors TO-126 P b Lead Pb -Free 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Symbol PNP/2SB776 NPN/2SD886 Unit Collector-Emitter Voltage

2SB817

Abstract: 2SD1047 2s8817 transistor 2sd1047 transistor 2sb817
Contextual Info: Æ&m o s p e c PNP SILICON POWER TRANSISTORS PNP 2SB817 2SB817 transistor is designed for use in general purpose power amplifier,application FEATURES: * Collector-Emitter Voltage V CE0= 140V Min * DC Current Gain hFE= 60-200@ lc= 1.0A * Complement to 2SD1047

2SB772 sot-89

Abstract: TRANSISTOR SMD sot-89 smd 2sd882
Contextual Info: Transistors SMD Type PNP Silicon Power Transistor 2SB772 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 ● PNP transistor High current output up to 3A 2.50±0.1 4.00±0.1 ● Low Saturation Voltage ● Complement to 2SD882 0.53±0.1 0.80±0.1

Contextual Info: Ordering num ber: EN1046B 2SB919/2SD1235 PNP/NPN Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications Use • Large current switching of relay drivers, high-speed inverters, converters Features • Low collector-to-emltter saturation voltage: VcE sat =—'0.5V(PNP), 0.4(NPN) max.

2SD882 pnp

Abstract: 2sb772 2SD882 br d882 p D882 B772 D882 b772 p J D882 transistor D882 datasheet 2SB77
Contextual Info: 2SB772 2SD882 PNP / NPN Epitaxial Planar Transistors TO-126 P b Lead Pb -Free 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Symbol PNP/2SB772 NPN/2SD882 Unit Collector-Emitter Voltage VCEO -30 30 Vdc Collector-Base Voltage VCBO

Contextual Info: [ Ordering number: EN3363 I SA\YO ' I 2SB1467/2SD2218 No.3363 PNP/NPN Epitaxial Planar Silicon Transistors 30V/8A Switching Applications Applications • Relay drivers, high-speed inverters, converters Features • Micaless package facilitating mounting • Low collector-to-emitter saturation voltage: VcE sat = • •0.5V(PNP), 0.4V(NPN) max

Contextual Info: Ordering number: EN 1022A WNO.1022A i 2SB904/2SD1213 PNP/NPN Epitaxial Planar Silicon Transistors SA iY O I 30V/20A High-Speed Switching Applications Use • Large current switching o f relay drivers, high-speed inverters, converters Features • Low collector-to-emitter saturation voltage: VcE sat =—10.5V(PNP), 0.4(NPI\I) max.

2SB541

Abstract: 2SD388 C14A 2SD388 A 2sd388/2sb541 251C audio amplifier 50w 50v
Contextual Info: 2SD 388/2SB541 2SD388/2SB541 npn/ pnp E.nm * y =• > h 7 v * * * NPN/PNP SILICON TRIPLE DIFFUSED MESA TRANSISTOR ffl/A u d io Frequency Power Amplifier WttmZPACKAGE DIMENSIONS Unit:mm ft St/FEA T U R E • 40~ 50W H i-Fi 7 v ^2 y t v 9 ') '<V — \ 7 v v 7 9 7;

2SD381

Abstract: 2SB537 transistor 2sd381 2SD382 2SB536 2SB536 M SB536 251C
Contextual Info: 2SD381, 382/2SB536, 537 2SD381, 382/2SB536, 537 / NPN/PNP NPN/PNP SILICON EPITA XIA L TRANSISTOR Audio Frequency Power Am plifier, Low Speed Switching £ » /F E A T U R E S 60—100W M'<9-ryy<o Suitable for driver of 60 to 100 watts audio amplifier. •» £ E T '* 5 o

2SB793

Abstract: 2SB793 R 2sa793 2SD973A 2SB793A 2SD973 2SB793 Q
Contextual Info: 2SB793, 2SB793A 2SB793, 2SB793A '> ij =i V PNP i l f ^ + '> T'JUTV—^ Jfé/S i PNP Epitaxial Planar 2SD973, 2SD973A £ • 4$ U nit ‘ mm Pow er Am plifier jt U / Com plem entary Pair with 2SD973, 2SD973A 6.9±0.1 2.5 + 0.1 /F e a tu r e s • VcE sat

2SB1122

Abstract: 2SD1622 FP203 2SB1122 equivalent
Contextual Info: Ordering number:EN4496 FP203 PNP/NPN Epitaxial Planar Silicon Transistors Push-Pull Circuits Features Package Dimensions • Composite type with 2 transistors of PNP transistor and NPN transistor,facilitating high-density mounting. · The FP203 is formed with chips, being equivalent to

2SB324

Abstract: 2SD352 2SB324 N ST191 C 5386 GE PNP ALLOY JUNCTION 2SB32
Contextual Info: 2SB324 2SB324 W v s - ÿ A PNP -â-^-ê-ü/Ge PNP Alloy Junction UL M Power Amplifier 2SD352 ¿ a > 7 pU / > ^ U /C om plem entary pair with 2SD352 $$ U n it: mm C ollector m ark /F ea tu res (3 hFE <d y ^ 7 y r • 2SD352 ¿ a y / M 6jim ax. 9 * W & 7 lO

2SKB

Abstract: 2sd401 2SD401A 25D40 2SB546A 2SB547A 2SD402A 2sB54 2SD401 L NEC JAPAN
Contextual Info: NEC SILICON POWER TR A N S IS TO R S ELEC TR ON DEVICE ?.SR 546A,b4'/A/?.S 1 401 A, 40?. A VERTICAL DEFLECTION OUTPUT FOR COLOR TV PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTORS D E S C R IP T IO N The 2SB546A PNP), 2S D 401A (N P N ), 2SB547A (PNP), and 2S D 402A (NPN) are high voltage triple diffused silicon transis­