PN CHANNEL MOSFET 10A Search Results

Power MOSFET 50V 10A

Contextual Info: SSFP10N40 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 400V Simple Drive Requirement ID25 = 10A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability

Contextual Info: artville Opportunities and Challenges in Realizing the Full Potential of SiC Power Devices Ranbir Singh and Michael Pecht 1932-4529/08/$25.00©2008 IEEE E volutionary improvements in silicon Si power devices through better device designs, processing techniques, and material quality have

OM9332SC-OM934

Contextual Info: OM NI R EL CORP 14E 1^70=1073 0 0 0 0 4 5 5 'S 3IL OM9332SC OM9334SC OM9336SC OM9338§fc OM9340SC OM9333SC OM9335SC OM9337SC OM9339SC QUAD POWER MOSFETS 'i 'T - Z P t - Z X Uncommitted and Isolated Quad MOSFETs FEATURES • P-Channel and N-Channel Devices

Trench MOSFET Termination Structure

Abstract: Diodes ed26 PN channel MOSFET 10A Design Seminar electric field International Power Sources International Semiconductor Technologies etal p407 vishay ED26 Designing with Field Effect Transistors
Contextual Info: Presented at the 7th International Seminar on Power Semiconductors, ISPS’06, Prague, Czech Republic, 2006. Low-Voltage, Super-Junction Technology Deva N. Pattanayak, Yuming Bai, and King Owyang Vishay Siliconix 2201 Laurelwood Road, Santa Clara, CA 95054, USA

OM9332SC

Abstract: OM9333SC OM9334SC OM9335SC OM9336SC OM9337SC OM9339SC OM9340SC
Contextual Info: O M N I R E L CORP 14E 1^70=1073 0 0 0 0 4 5 5 'S 3 O M 93 32 S C O M 9334S C O M 9336S C O M 9338§fc IL O M 9340S C O M 93 33 S C O M 9335S C O M 9337S C O M 9339S C QUAD POWER MOSFETS 'i 'T - Z P t - Z X Uncommitted and Isolated Quad MOSFETs FEATURES •

Contextual Info: AN1101 Automotive Reverse Battery Protection Diode Siva Uppuluri, Applications Engineer, Diodes Inc. This application note compares the performance of Diodes Inc. Super Barrier Rectifier SBR as an automotive reverse battery protection diode with other solutions. An overview of the reverse battery

Contextual Info: AN1099 Automotive Reverse Battery Protection Diode Introduction This application note compares the performance of Diodes Inc. Super Barrier Rectifier SBR as an automotive reverse battery protection diode with other solutions. An overview of the reverse battery protection requirement and the qualification standards are also presented.

4910n

Abstract: PN channel MOSFET 10A
Contextual Info: AF4910N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-resistance - Simple Drive Requirement - Dual N MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

PN channel MOSFET 10A

Abstract: 4910N AF4910N
Contextual Info: AF4910N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Dual N MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

PN channel MOSFET 10A

Abstract: UK2996G-TA3-T MOSFET 400V TO-220 UK2996 UK2996L-TA3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UK2996 MOSFET 600V SILICON N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UK2996 is an N-channel enhancement mode field-effect power transistor. Intended for use in high voltage, high speed switching applications in power supplies, DC-DC converter, relay drive and PWM

PN channel MOSFET 10A

Abstract: AF4910N 4910n
Contextual Info: AF4910N Dual N-Channel 30-V D-S MOSFET Features General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Low side high current DC-DC Converter

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UK2996 MOSFET 600V SILICON N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UK2996 is an N-channel enhancement mode field-effect power transistor. Intended for use in high voltage, high speed switching applications in power supplies, DC-DC converter, relay drive and PWM

2SK series

Abstract: FUJI FA SERIES
Contextual Info: 2SK1102-01M SIPMOS FUJI POWER MOS-FET N-CHANNELSILICON POWER MOS-FET — - - n Tt A r n i r ^ P A P -ll SERIES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power

tektronix 576 curve tracer

Abstract: NDS351N high power pulse generator with mosfet PN channel MOSFET 10A tektronix type 576 curve tracer RC snubber circuit
Contextual Info: Application Note 558 Ralph Locher Introduction to Power MOSFETs and their Applications INTRODUCTION The Power MOSFETs that are available today perform the same function as Bipolar transistors except the former are voltage controlled in contrast to the current controlled Bipolar devices. Today

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET „ DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET „ DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in

PN channel MOSFET 10A

Abstract: UK2996L-TA3-T C5520 UK2996 UK2996-TA3-T UK2996-TF3-T n-CHANNEL POWER MOSFET 600v MOSFET 25A 600V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UK2996 MOSFET 600V SILICON N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UK2996 is an N-channel enhancement mode field-effect power transistor. Intended for use in high voltage, high speed switching applications in power supplies, DC-DC converter, relay

Mosfet

Abstract: SSF1030B
Contextual Info: SSF1030B 100V N-Channel MOSFET FEATURES  Advanced trench process technology  Ultra low Rdson, typical 25mohm ID =7A  High avalanche energy, 100% test BV=100V  Fully characterized avalanche voltage and current R DS ON =25mΩ（typ.）  Lead free product

UF640L-TA3-T

Abstract: PN channel MOSFET 10A UF640 UF640-TA3-T UF640-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 1 DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 1 DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30ASH-2 HIGH-SPEED SWITCHING USE FS30ASH-2 OUTLINE DRAWING Dimensions in mm 6.5 5.0 1 0.2 C /n T n q w e Q w r q w e r V 2.5V DRIVE V d s s .100V q

tektronix 576 curve tracer

Abstract: 10063 mosfet 4b application circuits of IRF330 drive motor 10A with transistor P channel MOSFET AN-558 C1995 IRF330 IRF450 n mosfet depletion
Contextual Info: INTRODUCTION The high voltage power MOSFETs that are available today are N-channel enhancement-mode double diffused MetalOxide-Silicon Field Effect Transistors They perform the same function as NPN bipolar junction transistors except the former are voltage controlled in contrast to the current

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10UM-14A HIGH-SPEED SWITCHING USE FS10UM-14A OUTLINE DRAWING Dimensions in mm 4 .5 , . 1 .3 T < l! • VOSS . 700V • r o s O N (M A X ) I GATE DRAIN 3 SOURCE

69mH

Contextual Info: SSFP11N40 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 400V Simple Drive Requirement ID25 = 11A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability