PLASTIC BA7 MARKING CODE Search Results
PLASTIC BA7 MARKING CODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 5446/BEA | Rochester Electronics LLC | 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
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| 54LS190/BEA | Rochester Electronics LLC | 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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PLASTIC BA7 MARKING CODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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BZX84C75
Abstract: BZX84C4V3ET1 marking bb8 marking code bb6
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bzx84c2v4et1ot-23bzx84c2v4et1/dbzx84c75+3 | |
BA5 marking
Abstract: BZX84C8V2E plastic BA5 marking code marking code bb6 marking BA7 BA6 marking Zener Diode BA6 BZX84C2V4ET1 BZX84C3V0ET1 BZX84C3V3ET1
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bzx84c2v4et1ot-23bzx84c2v4et1/dba5 marking+8 | |
BA7 marking
Abstract: plastic BA5 marking code BA6 marking BA5 marking plastic BA7 marking code BZX84C4V7ET1 BZX84C2V4ET1 BZX84C2V7ET1 BZX84C3V3ET1 BZX84C3V6ET1
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bzx84c2v4et1ot-23bzx84c2v4et1/dba7 marking+8 | |
plastic BA5 marking code
Abstract: SZBZX84 BZX84C3V6ET1G marking code bb6 marking code ba5 SOT23 MARKING BB1 marking ba5 SZBZX84CX plastic BA7 marking code BA6 marking
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bzx84cxxxet1gszbzx84cxxxet1got-23aec-q101+11 | |
plastic BA5 marking code
Abstract: SZBZX84 MARKING BA9 sot-23 SZBZX84C SOT23 MARKING BB1 MARKING BD2 SOT-23 BA5 marking plastic BA4 marking code BZX84C8V2ET1 BA5 SOT23
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bzx84cxxxet1szbzx84cxxxet1got-23bzx84c2v4et1/d+10 | |
MT49H16M18CContextual Info: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O |
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288mb09005aef80a41b59/zip09005aef811ba111mt49h8m18c+1 | |
BA5 marking
Abstract: BA7 marking plastic BA5 marking code A53 SMD Marking Code ba7 transistor SMD MARKING CODE ACY MT49H16M18C smd cod RLDRAM A22 SMD MARKING CODE
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Original |
288mbmt49h16m18cmt49h32m9c144-ball+12 | |
15READ
Abstract: marking ba5 MT49H8M18C MT49H16M18C
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Original |
288mbmt49h16m18c09005aef80a41b59/source09005aef811ba111+3 | |
MT49H16M18CContextual Info: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate) |
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288mbmt49h16m18c09005aef80a41b59/source09005aef811ba111+1 | |
smd dk qk
Abstract: SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM MT49H16M18C
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Original |
288mbclo68-3900mt49h16m18csmd dk qk+4 | |
MT49H16M18CContextual Info: PRELIMINARY‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O |
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288mbmt49h8m18cmt49h16m18c | |
TDA8756
Abstract: marking code CB SMD ic N6 acrx smd marking code pa0 MARKING BB5 ic DEVICE MARKING CODE ga7 AC-RX2 Top Marking GB2 marking gb0 marking GB6
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Original |
tda8754lqfp144lbga208tda8756+9 | |
MT49H16M18CContextual Info: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O |
Original |
288mbclo68-3900mt49h16m18c | |
smd marking codes BA5
Abstract: MT49H16M18C
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288mbmt49h16m18csmd marking codes ba5 | |
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Contextual Info: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks |
Original |
256mbmt49h8m32mt49h16m16144-ball+3 | |
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Contextual Info: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks |
Original |
256mb09005aef81121545/source09005aef810c0ffc256mbx16x32rldram | |
BA6A
Abstract: marking code d2c smd
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Original |
256mb09005aef81121545/source09005aef810c0ffc256mbx16x32rldram+2 | |
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Contextual Info: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks |
Original |
256mb09005aef81121545/source09005aef810c0ffc256mbx16x32rldram | |
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Contextual Info: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM Features Reduced Latency DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 banks MT49H16M16 – 2 Meg x 16 x 8 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/rldram/ |
Original |
256mbmt49h8m32mt49h16m1609005aef81121545/source+2 | |
smd transistor marking HT1
Abstract: 256Mb SMD d1c smd transistor d4d MT49H16M16 MT49H8M32 F1198 38P11
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256mbmt49h8m32mt49h16m16144-ball+9 | |
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Contextual Info: Spansion SLC NAND Flash Memory for Embedded 1 Gb, 2 Gb, 4 Gb Densities: 4-bit ECC, x8 and x16 I/O, 1.8V VCC S34MS01G2, S34MS02G2, S34MS04G2 Spansion® SLC NAND Flash Memory for Embedded Cover Sheet Data Sheet Preliminary Notice to Readers: This document states the current technical specifications regarding the Spansion |
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s34ms01g2s34ms02g2s34ms04g2 | |
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Contextual Info: Spansion SLC NAND Flash Memory for Embedded 1 Gb, 2 Gb, 4 Gb Densities: 4-bit ECC, x8 and x16 I/O, 3V VCC S34ML01G2, S34ML02G2, S34ML04G2 Spansion® SLC NAND Flash Memory for Embedded Cover Sheet Data Sheet Preliminary Notice to Readers: This document states the current technical specifications regarding the Spansion |
Original |
s34ml01g2s34ml02g2s34ml04g2 | |
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Contextual Info: Spansion SLC NAND Flash Memory for Embedded 1 Gb, 2 Gb, 4 Gb Densities: 4-bit ECC, x8 and x16 I/O, 1.8V VCC S34MS01G2, S34MS02G2, S34MS04G2 Spansion® SLC NAND Flash Memory for Embedded Cover Sheet Data Sheet Preliminary Notice to Readers: This document states the current technical specifications regarding the Spansion |
Original |
s34ms01g2s34ms02g2s34ms04g2 | |
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Contextual Info: Spansion SLC NAND Flash Memory for Embedded 1 Gb, 2 Gb, 4 Gb Densities: 4-bit ECC, x8 and x16 I/O, 3V VCC S34ML01G2, S34ML02G2, S34ML04G2 Spansion® SLC NAND Flash Memory for Embedded Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion |
Original |
s34ml01g2s34ml02g2s34ml04g2 | |