PK13197H32 Search Results

IS61C5128AL

Abstract: IS61C5128AS-25QLI IS61C5128AL-10KLI IS61C5128AL-10TLI IS61C5128AS-25TLI 64C5128AS
Contextual Info: IS61C5128AL/AS IS64C5128AL/AS 512K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: IS61/64C5128AL • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C5128AS)

IS62WV1288BLL-55HLI

Abstract: IS62WV1288ALL IS62WV1288ALL-70BI IS62WV1288ALL-70HI IS62WV1288BLL IS62WV1288BLL-45TI
Contextual Info: IS62WV1288ALL IS62WV1288BLL ISSI 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM JUNE 2005 FEATURES DESCRIPTION • High-speed access time: 45ns, 55ns, 70ns The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8

Contextual Info: IS63LV1024 IS63LV1024L ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT MAY 2004 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for

55BL

Abstract: 62WV5128BLL issi is62wv5128bll IS62WV5128BLL-55T2LI IS62WV5128BLL
Contextual Info: IS62WV5128ALL IS62WV5128BLL 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM JANUARY 2008 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns The ISSI IS62WV5128ALL / IS62WV5128BLL are highspeed, 4M bit static RAMs organized as 512K words by 8

Contextual Info: IS61C1024AL IS64C1024AL ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM DECEMBER 2004 FEATURES DESCRIPTION • High-speed access time: 12, 15 ns • Low active power: 160 mW typical • Low standby power: 1000 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

Contextual Info: IS62WV2568ALL IS62WV2568BLL 256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM MAY 2008 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSI's high-performance CMOS

Contextual Info: ISSI IS63LV1024 IS63LV1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DECEMBER 2005 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for

IS63WV1024LL

Abstract: IS63WV1024LL-20BI IS63WV1024LL-20HI IS63WV1024LL-20JI IS63WV1024LL-20TI
Contextual Info: ISSI IS63WV1024LL 128K x 8 HIGH-SPEED CMOS STATIC RAM FEBRUARY 2004 FEATURES DESCRIPTION • High-speed access time: 20ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options

62WV5128ALL

Abstract: IS62WV5128ALL IS62WV5128ALL-70HI IS62WV5128ALL-70T2I IS62WV5128ALL-70TI IS62WV5128BLL
Contextual Info: IS62WV5128ALL IS62WV5128BLL ISSI 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DECEMBER 2003 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns The ISSI IS62WV5128ALL / IS62WV5128BLL are highspeed, 4M bit static RAMs organized as 512K words by 8

62WV5128ALL

Abstract: IS62WV5128BLL-55QLI IS62WV5128BLL-55TLI IS62WV5128BLL IS62WV5128ALL IS62WV5128ALL-70HI IS62WV5128ALL-70T2I IS62WV5128ALL-70TI
Contextual Info: IS62WV5128ALL IS62WV5128BLL 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM JANUARY 2008 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns The ISSI IS62WV5128ALL / IS62WV5128BLL are highspeed, 4M bit static RAMs organized as 512K words by 8

Contextual Info: IS63LV1024 IS63LV1024L ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT OCTOBER 2005 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for

Contextual Info: IS62WV1288ALL IS62WV1288BLL ISSI 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM JUNE 2003 FEATURES DESCRIPTION • High-speed access time: 45ns, 55ns, 70ns The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8

Contextual Info: ISSI PACKAGING INFORMATION Plastic STSOP - 32 pins Package Code: H Type I A2 A A1 1 N E b e D1 S SEATING PLANE D L Plastic STSOP (H - Type I) Millimeters Inches Symbol Min Max Min Max Ref. Std. N 32 A — 1.25 — 0.049 A1 0.05 — 0.002 — A2 0.95 1.05

PK131

Contextual Info: IS62LV1024L IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM p r e l im in a r y OCTOBER 1997 FEATURES DESCRIPTION • Access times of 35, 45, 50, and 70 ns The IS S IIS62LV1024L and IS62LV1024LL are low power and low Vcc, 131,072-word by 8-bit CMOS static RAMs. They

IS61C1024AL-12JLI

Abstract: IS64C1024AL-15KA3 IS61C1024AL IS61C1024AL-12J IS61C1024AL-12JI IS61C1024AL-12KI IS61C1024AL-12T IS64C1024AL IS61C1024
Contextual Info: IS61C1024AL IS64C1024AL ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION SEPTEMBER 2004 FEATURES DESCRIPTION • High-speed access time: 12, 15 ns • Low active power: 600 mW typical • Low standby power: 500 µW (typical) CMOS standby

Contextual Info: ISSI PACKAGING INFORMATION Plastic STSOP - 32 pins Package Code: H Type I A2 A A1 1 N E b e D1 S SEATING PLANE D L Plastic STSOP (H - Type I) Millimeters Inches Symbol Min Max Min Max Ref. Std. N 32 A — 1.25 — 0.049 A1 0.05 — 0.002 — A2 0.95 1.05

is61wv5128

Contextual Info: IS61WV5128ALL/ALS IS61WV5128BLL/BLS IS64WV5128BLL/BLS 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM MARCH 2008 FEATURES HIGH SPEED: IS61/64WV5128ALL/BLL • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low stand-by power: 7 mW (typical)

Contextual Info: IS61C1024AL IS64C1024AL ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM JANUARY 2005 FEATURES DESCRIPTION • High-speed access time: 12, 15 ns • Low active power: 160 mW typical • Low standby power: 1000 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

62WV5128ALL

Abstract: IS62WV5128ALL IS62WV5128ALL-70H IS62WV5128ALL-70T IS62WV5128ALL-70T2 IS62WV5128ALL-70TI IS62WV5128BLL
Contextual Info: IS62WV5128ALL IS62WV5128BLL ISSI 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM APRIL 2003 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns The ISSI IS62WV5128ALL / IS62WV5128BLL are highspeed, 4M bit static RAMs organized as 512K words by 8

IS62WV1288ALL

Abstract: IS62WV1288ALL-70BI IS62WV1288ALL-70HI IS62WV1288BLL IS62WV1288BLL-45TI
Contextual Info: IS62WV1288ALL IS62WV1288BLL ISSI 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM JANUARY 2004 FEATURES DESCRIPTION • High-speed access time: 45ns, 55ns, 70ns The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8

IS63LV1024

Abstract: IS63LV1024-10J IS63LV1024-10K IS63LV1024-10T IS63LV1024-12T IS63LV1024-8K IS63LV1024L
Contextual Info: IS63LV1024 IS63LV1024L ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT MARCH 2005 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for

IS63LV1024

Abstract: IS63LV1024-10J IS63LV1024-10K IS63LV1024-10T IS63LV1024-8K IS63LV1024-8KL IS63LV1024L is63lv1024l-10kli
Contextual Info: IS63LV1024 IS63LV1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT JANUARY 2007 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity

IS63LV1024

Abstract: IS63LV1024-10J IS63LV1024-10K IS63LV1024-10T IS63LV1024-8K IS63LV1024-8KL IS63LV1024L
Contextual Info: IS63LV1024 IS63LV1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT JANUARY 2008 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity

IS62WV5128BLL

Contextual Info: IS62WV5128ALL IS62WV5128BLL 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM JUNE 2007 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns The ISSI IS62WV5128ALL / IS62WV5128BLL are highspeed, 4M bit static RAMs organized as 512K words by 8 bits. It is fabricated using ISSI's high-performance CMOS