PIR 428 Search Results

RTL8201 reference Design

Abstract: RTL8201CP reference Design RTL8201 EVALUATION BOARD RTL8201 Design RTL8201cp Design RTL8201 rtl8201 application note rtl8201cp application note pir 345 RTL8201CP IC
Contextual Info: APPLICATION NOTE SH7670 Group Example of Setting for Automatic Negotiation by Ethernet PHY-LSI Introduction This application note describes an example of settings for automatic negotiation with partners in communications when an Ethernet PHY-LSI chip has been connected to an SH7670, SH7671, SH7672 or SH7673.

Contextual Info: NOV 1 1 199« _ ^ Data Sheet jÄ liT r Microelectronics l/ME DSP32C Digital Signal Processor Introduction Description AT&T is the industry leader in floating-point digital signal processing. AT&T's DSP32 architecture was introduced in 1985 and is now the accepted

WE-DSP32C

Abstract: we dsp32 7495 4-bit shift register dsp32c WEDSP32 dsp32 att OXE800 AT&T dsp32 PDB11 sy 164
Contextual Info: NOV i l 19M . Data Sheet ^ AT&T r Microelectronics WIE DSP32C Digital Signal Processor Introduction Description AT&T is the industry leader in floating-point digital signal processing. AT&T's DSP32 architecture was introduced in 1985 and is now the accepted

WEDSP32C

Contextual Info: — * Microelectronics WE DSP32C Digital Signal Processor Introduction Description AT&T is the industry leader in floating-point digital signal processing. AT&T's DSP32 architecture was introduced in 1985 and is now the accepted standard in the speech, signal processing,

C07F

Abstract: b803 pulse generator variable duty cycle C053 CA2ir 5F22 B-803 001B AN532 AN539
Contextual Info: PWM Operation AN564 Using the PWM INTRODUCTION This Application Note describes the operation of the PWM. They include the following topics: The PIC16/17 family of RISC-like microcontrollers has been designed to provide advanced performance and a cost-effective solution for a variety of applications. This

Contextual Info: PACE1750AE SINGLE CHIP, 40MHz, ENHANCED CMOS 16-BIT PROCESSOR FEATURES — Parametric Memory Inner-Dot Products for Matrix Computations Up To 64K. — Fast Polynomial expansion algorithm. — Fast context switching with instruction to block move up to 16 new mapping memory page

diode sk 4f1/ 02

Abstract: diode sk 4f1 pace1750 pace1750a F9450 diode sk 4f1/ 10 PACE1750AE P1750A MJ015 mil-std-1750a
Contextual Info: PACE1750AE SINGLE CHIP, 40MHz, ENHANCED CMOS 16-BIT PROCESSOR IP 1 F 8 E L M D IN M Y FEATURES — Parametric Memory Inner-Dot Products for Matrix Computations Up To 64K. — Fast Polynomial expansion algorithm. — Fast context switching with instruction to block

GP517

Abstract: GP001 EPIC bit-slice 16 PIN PIR controller IC 23/GP517/1RZ
Contextual Info: 17E ~G E D • SOLID 3 fl7 SGf l l QGSSSTS S ■ STATE Radiation-Hardened Hlgh-Reliability ICs GP517/1RZ Advance Information High-Reliability, Radiation-Hardened CM O S/SO S Interrupt Controller ~T-S2. 55 I3> Aerospace Class S Screening Features: ■ Provides interrupt controller functions

R61509V

Abstract: S695 diode
Contextual Info: Target Spec R61509V 260k-color, 240RGB x 432-dot graphics liquid crystal controller driver for Amorphous-Silicon TFT Panel REJxxxxxxx-xxxx Rev.0.11 April 25, 2008 Description . 6

Contextual Info: FLM1213-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 39.0dBm Typ. High Gain: G ^ b = 6.5dB (Typ.) High PAE: riadd = 28% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: FLM1415-6F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P ^ b = 37.0dBm Typ. High Gain: G ^ g = 5.5dB (Typ.) High PAE: riadd = 20% (Typ.) Low IM3 = -45dBc@Po = 26.0dBm (Typ.) Broad Band: 14.5 ~ 15.3GHz Impedance Matched Zin/Zout = 50Q

FLM7179-8F

Contextual Info: FLM7179-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 39.5dBm Typ. High Gain: G ^ b = 9.0dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Q

FLM3742-12F

Abstract: fujitsu GHz gaas fet PIR 203 S
Contextual Info: FLM3742-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 41 -506171 Typ. High Gain: G ^ b = 11,5dB (Typ.) High PAE: riadd = 40% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: Audio Digital Key Controller BU9260FS The BU9260FS is designed for key control, an essential feature for karaoke systems. •Applications Mini-component stereos, radio cassette recorders, karaoke and other audio devices •F e a tu re s 1 Internal t/O filter and mixing operational amplifier

EIA-481-2

Abstract: J-STD-033 CPC2030NTR Sensor Circuitry CPC2030N
Contextual Info: CPC2030N Dual Single-Pole, Normally Open 8-Pin SOIC OptoMOS Relay Parameter Blocking Voltage Load Current Max On-resistance LED Current to operate Rating 350 120 30 2 Description Units VP mA  The CPC2030N is a miniature device with two independent normally open 1-Form-A solid state

Contextual Info: CPC2030N Dual Single-Pole, Normally Open 8-Pin SOIC OptoMOS Relay INTEGRATED CIRCUITS DIVISION Parameter Blocking Voltage Load Current On-Resistance max LED Current to operate Rating 350 120 30 2 Units VP mArms / mADC  mA Features • • • • •

cpc2025n

Contextual Info: CPC2025N Dual Single-Pole, Normally Open 8-Pin SOIC OptoMOS Relay Parameter Blocking Voltage Load Current Max On-Resistance LED Forward Current to Activate Rating 400 ±120 30 2 Units VP mA  mA Features • • • • • • • • Description The CPC2025N is a miniature device with two

CPC2025N

Contextual Info: CPC2025N Dual Single-Pole, Normally Open 8-Pin SOIC OptoMOS Relay INTEGRATED CIRCUITS DIVISION Parameter Blocking Voltage Load Current On-Resistance max LED Forward Current (to Activate) Rating 400 120 30 2 Units VP mArms / mADC  mA Features • •

Contextual Info: CPC2030N Dual Single-Pole, Normally Open 8-Pin SOIC OptoMOS Relay Parameter Blocking Voltage Load Current Max On-resistance LED Current to operate Rating 350 ±120 30 2 Description Units VP mA  The CPC2030N is a miniature device with two independent normally open 1-Form-A solid state

Contextual Info: CPC2330N Dual Single-Pole 8-Pin SOIC OptoMOS Relay INTEGRATED CIRCUITS DIVISION Parameter Blocking Voltage Load Current On-Resistance max LED Current to operate Rating 350 120 30 2 Units VP mArms / mADC  mA Features • • • • • • • • Description

Contextual Info: CPC2330N Dual Single-Pole 8-Pin SOIC OptoMOS Relay Parameter Blocking Voltage Load Current Max On-resistance LED Current to operate Rating 350 120 30 2 Description Units VP mA Ω The CPC2330N is a miniature device with two independent solid state relays, one normally open

CPC2330N

Contextual Info: CPC2330N Dual Single-Pole 8-Pin SOIC OptoMOS Relay INTEGRATED CIRCUITS DIVISION Parameter Blocking Voltage Load Current On-Resistance max LED Current to operate Rating 350 120 30 2 Units VP mArms / mADC  mA Features • • • • • • • • Description

Contextual Info: CPC2330N Dual Single-Pole 8-Pin SOIC OptoMOS Relay INTEGRATED CIRCUITS DIVISION Parameter Blocking Voltage Load Current On-Resistance max LED Current to operate Rating 350 120 30 2 Units VP mArms / mADC  mA Features • • • • • • • • Description

J-STD-033

Abstract: CPC2330 CPC2330N REED RELAY clare
Contextual Info: CPC2330N Dual Single-Pole 8-Pin SOIC OptoMOS Relay Parameter Blocking Voltage Load Current Max On-resistance LED Current to operate Rating 350 120 30 2 Description Units VP mA Ω The CPC2330N is a miniature device with two independent solid state relays, one normally open