PICOSECOND Search Results

Contextual Info: BZT03-Series www.vishay.com Vishay Semiconductors Zener Diodes with Surge Current Specification FEATURES • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Contextual Info: TeMIC BZW03C. S e m i c o n d u c t o r s Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications Voltage regulators and transient suppression circuits

photodetector 850 nm

Abstract: G417603 Ultrafast Photodetectors GmbH G4176-03
Contextual Info: PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response G4176-03 : tr , tf = 30 ps (Typ.) G7096-03 : tr = 40 ps (Typ.) Low dark current G4176 series : 100 pA (Ta=25 °C)

C8898

Abstract: M8903 PLP10-044C PLP-10 PLP10-038 PLP10-041 PLP10-044 PLP10-063 PLP10-065 PLP10-067
Contextual Info: HIGH-REPETITION PICOSECOND LIGHT PULSER Model PLP-10 New High repetition up to 100 MHz from Hamamatsu Wavelength range from 375 to 1,550 nm The picosecond light pulser PLP-10 is an ultrashort pulsed light source that utilizes a laser diode LD head. It consists

BZW03C

Abstract: BZW03C6V8
Contextual Info: BZW03C. Vishay Telefunken Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications 94 9588 Voltage regulators and transient suppression circuits Order Instruction

Contextual Info: BZT03-Series www.vishay.com Vishay Semiconductors Zener Diodes with Surge Current Specification FEATURES • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Material categorization: For definitions of compliance please see

BZW03C

Abstract: BZW03C10 BZW03C11 BZW03C12 BZW03C13 BZW03C6V8 BZW03C7V5 BZW03C8V2 BZW03C9V1 BZW03C43 vishay
Contextual Info: BZW03-Series Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • Glass passivated junction Hermetically sealed package Clamping time in picoseconds Lead Pb -free component e2 949588 • Component in accordance to RoHS 2002/95/EC

BZT03D

Abstract: BZT03D6V2
Contextual Info: BZT03D. Vishay Semiconductors Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits

Contextual Info: v tS H A Y _BZT03D— ▼ Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and

Contextual Info: SIP Delay Lines US Patent 5,365,203 DL1L Series 1.0 Description These products offer performance up to 5 gigahertz. For many high frequency applications, these passive, discrete, tight tolerance ±50 picosecond delay lines can be used to help solve your TTL, CMOS, and ECL timing

macrocell ecl

Abstract: 4S514
Contextual Info: HONEYWELL DIGITAL PRODUCT bb dË J 4SS14S3 0000D43 *=1 T-42-11-13 JUNE 1985 ECL GATE ARRAY HE8000 PRO DUCT DESCRIPTION The HE8000 Gate Array Figure 1 is a 250 picosecond, 8000 equivalent gate density Very Large Scale Integra­ tion (VLSI) monolithic integrated circuit built using

U904

Abstract: U902
Contextual Info: - ;-:-ff HONEYWELL DIGITAL PRODUCT Lb D E 4SS14S3 OODOIOD b | • ’ LSTTL GATE ARRAY —-:-_ T-42-11-15 MARCH 1985 HT5000 PRODUCT DESCRIPTION The HT5000 G ate A rray (Figure 1 is a 600 picosecond, 5000 equivalent gate density Very Large

Contextual Info: ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs Ultrafast response of several tens picosecond FEATURES Ultrafast response *1 tr , tf = 30 ps (Typ.) Low dark current 100 pA (Ta=25 °C) Large photosensitive area 200 mm *1: Values excluding response time of light source, bias tee, assembly circuit,

BZT0312

Abstract: bzt03-12
Contextual Info: BZT03C-12 SILICON Z-DIODES AND TRANSIENT VOLTAGE SUPPRESSORS 0.034 0.9 0.028 (0.7) Features • Glass passivated junction • Hermetically sealed package Min 1.0 (25.4) 0.107 (2.7) 0.080 (2.0) • Clamping time in picoseconds 0.205 (5.2) 0.166 (4.1) Applications

Contextual Info: BZW03-Series Vishay Semiconductors Zener Diodes with Surge Current Specification Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

picosecond

Abstract: HSMS-2700 HSMS-2702 HSMS-270B
Contextual Info: High Performance Schottky Diode for Transient Suppression Technical Data HSMS-2700/-2702 -270B/-270C Features • Ultra-low Series Resistance for Higher Current Handling Package Lead Code Identification Top View • Picosecond Switching SINGLE 3 • Low Capacitance

Contextual Info: SIP Delay Lines US Patent 5,365,203 DL1L Series 1.0 Description These products offer performance up to 5 gigahertz. For many high frequency applications, these passive, discrete, tight tolerance ±50 picosecond delay lines can be used to help solve your TTL, CMOS, and ECL timing

Hamamatsu streak c4334

Abstract: C5094 C1808-03 C4334-01 C4334 C4792 A5760 C4792-01 fluorescence C4780
Contextual Info: PICOSECOND FLUORESCENCE LIFETIME MEASUREMENT SYSTEM C4780 Captures fluorescence phenomena with 5 ps temporal resolution using 2D photon counting method. Enables simultaneous fluorescence lifetime analysis and time-resolved spectrophotometry. 1 Directly captures time variations of laser-excited

8v2 850

Contextual Info: BZT03C. Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits

Contextual Info: B ZT03D Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits

1N5713

Abstract: 1N5167 1n5165 MA4E2303
Contextual Info: Axial Lead Glass Packaged Schottky Diodes Features • PICOSECOND SWITCHING ■ JANTX/JANTXV SCREENING AVAILABLE ■ LOW FORWARD VOLTAGE DROP ■ LOW REVERSE LEAKAGE Applications This family of planar Schottky diodes is designed to have picosecond switching speed. These diodes are housed in

1N5711 JANTXV

Abstract: 1N5711 JANTX MA4E2835 MA4E2812 MA4E-2303 1N5167
Contextual Info: an A M P com pany General Purpose Axial Lead Glass Packaged Schottky Diodes V 2.00 Features • • • • Case Style 54 Picosecond Switching JANTX/JANTXV Screening Available Low Forward Voltage Drop Low Reverse Leakage Description This family of Schottky diodes have “picosecond” switch­

LI 803-4

Contextual Info: High-Speed Standard Edge Connectors Catalog 65822 Revised 1 2 -9 4 Product Facts • 1:1 signal-to-ground ratio ■ Designed for signal transmissions with rise and fall times of 0.5 nanoseconds or greater ■ 40 signal/ground pairs per linear inch ■ Less than 10 picosecond

Contextual Info: PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response G4176-03 : tr , tf = 30 ps (Typ.) G7096-03 : tr = 40 ps (Typ.) Low dark current G4176 series : 100 pA (Ta=25 °C)