PHP2N40E Equivalents and Alternates

PHP2N40E Functional Equivalents (5)

The Functional Equivalents tab will give you options that are likely to match the same function of PHP2N40E, but it may not fit your design.

Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number	Manufacturer	Composite Price	Description
PHP191NQ06LT,127	Nexperia	$4.0059	Power Field-Effect Transistor, 75A I(D), 55V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
APT10M25BNR	Microsemi Corporation (now Microchip)	Check for Price	75A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT5025BNR	Advanced Power Technology	Check for Price	Power Field-Effect Transistor, 23A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
934056693127	Nexperia	Check for Price	Power Field-Effect Transistor, 75A I(D), 40V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
PHP10N10E	NXP Semiconductors	Check for Price	Power Field-Effect Transistor, 11A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

PHP2N40E Datasheets (3)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
PHP2N40E	Philips Semiconductors	PowerMOS transistor	Original	PDF	18.65KB	4
PHP2N40E	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
PHP2N40E	Philips Semiconductors	PowerMOS transistor	Scan	PDF	98.76KB	3

PHP2N40E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor 10 sS 125 Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor PHP2N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and	OCR Scan	PHP2N40E T0220AB transistor 10 sS 125	PDF
Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor PHP2N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and	OCR Scan	PHP2N40E T0220AB	PDF
PHP2N40E Abstract: PHX1N40E Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP2N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable	Original	PHP2N40E OT186A PHX1N40E PHP2N40E PHX1N40E	PDF
n40e Abstract: PHP2N40E PHX1N40E Contextual Info: Objective specification Philips Semiconductors PowerMOS transistor Isolated version of PHP2N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable	OCR Scan	PHP2N40E PHX1N40E -SOT186A OT186A; n40e PHP2N40E PHX1N40E	PDF
Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolateci version of PHP2N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable	OCR Scan	PHP2N40E PHX1N40E OT186A	PDF
buk7530-55 Abstract: mosfet-n SOT166 TOPFET buk7530 Contextual Info: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263	OCR Scan	56-800A BUK446-800A BUK456-800B BUK446-800B BUK454-800A BUK444-800A BUK454-800B BUK444-800B BUK456-1000B BUK446-1000B buk7530-55 mosfet-n SOT166 TOPFET buk7530	PDF
T0-220AB Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET	OCR Scan	BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L T0-220AB PHILIPS MOSFET igbt mosfet switch BUK866 4001z	PDF
BUK444-200 Abstract: 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55 Contextual Info: Philips Semiconductors TOPFETs Selection Guide VDs Rdsion lD Id V) (fl) (A) (A) Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50LP TOPFET SOT263-O1 50 0.028 25 50 125 BUK116-50L TOPFET SOT426 50	OCR Scan	7-800B BUK446-800B BUK454-800A BUK444-800A BUK454-800B BUK444-800B BUK456-1OOOB BUK446-1000B T0220AB OT186 BUK444-200 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55	PDF
837 mosfet Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET	OCR Scan	BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L 837 mosfet 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook	PDF
PHP2N40E Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance	Original	O220AB PHP2N40E PHP2N40E	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
PHP2N40E Abstract: T0220AB Contextual Info: Objective specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance	OCR Scan	PHP2N40E T0220AB T0220AB; T0220 PHP2N40E	PDF

PHP2N40E Search Results

PHP2N40E Functional Equivalents (5)

PHP2N40E Datasheets (3)

PHP2N40E Datasheets Context Search

transistor 10 sS 125

PHP2N40E

n40e

buk7530-55

T0-220AB

BUK444-200

837 mosfet

PHP2N40E

YTA630

PHP2N40E