PHP1N60 Search Results

Contextual Info: Philips Semiconductors Objective Specification PowerMOS transistor PHP1N60E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and

Contextual Info: Philips Semiconductors Objective Specification PowerMOS transistor PHP1N60E GENERAL DESCRIPTION SYMBOL N-channel enhancement mode fieid-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and

PHP1N60E

Abstract: PHX1N60E
Contextual Info: Philips Semiconductors Objective Specification PowerMOS transistor Isolated version of PHP1N60E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable

Contextual Info: Philips Semiconductors Objective Specification PowerMOS transistor Isolated version of PHP1N60E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable

Contextual Info: Philips Semiconductors Objective Specification PowerMOS transistor Isolated version of PHP1N60E GENERAL DESCRIPTION PHX1N60E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable

n60e

Abstract: PHP1N60E PHX1N60E
Contextual Info: Objective Specification Philips Semiconductors PowerMOS transistor Isolated version of PHP1N60E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable

Phototransistor bp 101

Abstract: optocoupler handbook ac laptop adapter circuit pin configuration diode 1N4007 Tl431 as optocoupler driver character diode 1N4007 PWM controller so8 1N4007 BYV27-100 PUCC3801
Contextual Info: PUCC3801 Current-mode PWM controller Rev. 01 — 10 September 2001 Product data 1. General description The PUCC3801 is a current-mode Pulse Width Modulated PWM controller containing all the control and protection functions necessary to implement an off-line,

PHB2N60E

Abstract: PHD2N60E PHP1N60 PHP2N60E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP2N60E, PHB2N60E, PHD2N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance

buk7530-55

Abstract: mosfet-n SOT166 TOPFET buk7530
Contextual Info: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263

PHD2N60E

Abstract: PHB2N60E PHP1N60 PHP2N60E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP2N60E, PHB2N60E, PHD2N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance

N60E

Abstract: PHP1N60E T0220AB
Contextual Info: Objective Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance

T0-220AB

Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET

BUK444-200

Abstract: 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55
Contextual Info: Philips Semiconductors TOPFETs Selection Guide VDs Rdsion lD Id V) (fl) (A) (A) Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50LP TOPFET SOT263-O1 50 0.028 25 50 125 BUK116-50L TOPFET SOT426 50

837 mosfet

Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET

PHP1N60E

Abstract: AVALANCHE TRANSISTOR
Contextual Info: Philips Semiconductors Objective Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

PHX1N60A

Abstract: PHX2N60E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX2N60E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package