PHOTOTRANSISTOR L14G2 Search Results

OF LED 55B

Abstract: Phototransistor L14G3 application L14G1 l14g1 equivalent L14G2 L14G3 L14G3 phototransistor Phototransistor L14G3 L14G2 application note L14G3 equivalent
Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR L14G1 L14G2 L14G3 PACKAGE DIMENSIONS 0.230 5.84 0.209 (5.31) 0.195 (4.95) 0.178 (4.52) 0.255 (6.47) 0.225 (5.71) 0.030 (0.76) NOM 0.500 (12.7) MIN 0.100 (2.54) 0.050 (1.27) SCHEMATIC 2 1 (CONNECTED TO CASE) COLLECTOR 3 3

drive circuit for L14G3

Abstract: l14g2 L14G1 l14g3 telefunken ta 400 L14G3 phototransistor L14G1 phototransistor
Contextual Info: TELEFUNKEN ELECTRONIC &R2DCni QOOaSRb S 2 5 2 P L14G1 S 2 5 3 P L14G2 S 2 5 4 P L14G3 17E D TTlILillFMJKtiKl electronic C/Mtivf'fechnotoO«« T - f h c[ Silicon NPN Epitaxial Planar Phototransistor Applications: Detector in electronic control and drive circuits

L14G1

Abstract: l14g1 equivalent infrared led L14G2 circuit design L14G2 application note 1N6266 Phototransistor L14G2 fairchild make INFRARED EMITTING DIODE TO18 L14G1 phototransistor
Contextual Info: 1N6266 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment 0.209 5.31 • Mechanically and wavelength matched to the 0.184 (4.67) TO-18 series phototransistor 0.030 (0.76) NOM • Hermetically sealed package

st 1086

Abstract: L14G1 phototransistor L14G1 ST-1605 ST1087
Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14G1/2/3 PACKAGE DIMENSIONS DESCRIPTION The L14G series is a silicon phototransister m ounted in a narrow angle, TO -18 package. FEATURES SYMBOL INCHES MILLIMETERS MIN. MAX. MIN. MAX. A .225 .255 5.71 6.47

ST1083

Contextual Info: I HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14G1/2/3 PACKAGE DIMENSIONS DESCRIPTION The L14G series is a silicon phototransister mounted in a narrow angle, TO-18 package. - - - - - <pD - - - - J .— < ^ > 0 I — o A h * i I FEATURES SYMBOL A <f>b

L14GI

Abstract: l14g1 equivalent L14G3 L14G3 equivalent L14G2 l14g2 equivalent
Contextual Info: Detector Specifications L14G1, L14G2, L14G3 Light Detector Planar Silicon Phototransistor absolute m axim um ratings: P LAN E T h e L14GI th ro u g h L14G3 are highly sensitive NPN P lan ar Silicon P hototransistors. T hey are h o u se d in a T O -1 8 style herm etically sealed

ST1083

Abstract: L14G3 phototransistor L14G1 phototransistor st1086 ST108 st1084 Phototransistor L14G3 st1082 L14G1 L14G2
Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR BFIOELEClHftlf SCS L14G1/2/3 PACKAGE DIMENSIONS DESCRIPTION The L14G series is a silicon phototransister mounted in a narrow angle, TO-18 package. FEATURES SYMBOL A fa e ei h J k L oc INCHES MIN. MAX. .225 ,255 .016 .021 .209

L14F1 phototransistor datasheet

Abstract: L14F1 PHOTOTRANSISTOR Phototransistor L14F1 Phototransistor L14G3 phototransistor 650 nm l14g1 equivalent Phototransistor L14G2 L14G3 phototransistor datasheet L14G3 phototransistor L14G1 phototransistor
Contextual Info: Optoelectronics Hermetic Silicon Photosensors Part Number IC ON (mA) Test Conditions VCE (V) Ee (mW/cm2) λp (nm) min max BVCEO (V) max ICEO @ 10 V VCE (nA) max Sensor Type TO-18 Detector Package (Convex Lens) BPW36 5 0.5 940 GaAs 1.00 – 30 100 Phototransistor

Phototransistor L14G3

Abstract: st1084 L14G L14G1 l14g1 equivalent L14G3 ST108 st1082 L14G2 LED55B
Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14G1/2/3 PACKAGE DIMENSIONS DESCRIPTION The L14G series is a silicon phototransister mounted in a narrow angle, TO-18 package. 0b-Q - SYM BOL FEATURES IN C H E S M ILL IM E T E R S MIN. MAX. MIN. MAX. 6.47

2R70

Abstract: L14G3 L14G1 L14G1 phototransistor L14G2 L14G3 phototransistor ic iR light control L14G-1
Contextual Info: Detector Specifications L14G1, L14G2, L14G3 Light Detector Planar Silicon Phototransistor T h e L14G1 th ro u g h L14G3 are high!}' sensitive NPN P la n a r Silicon P h ototransistors. T h ey are h o u se d in a T O -18 style herm etically sealed package with lens cap. T h e L 14G series is ideal fo r use in optoelectronic

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

L14F1 phototransistor datasheet

Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
Contextual Info: Optoelectronics Light Emitting Diodes Light Emitting Diodes LED , Plastic Package Ie (mW/sr) CIF = 100 mA Max IR (µA) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) λp Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940

L14F1 phototransistor datasheet

Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
Contextual Info: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

Phototransistor L14F1

Abstract: Phototransistor L14F L14F1 phototransistor L14G1 phototransistor L14G3 phototransistor L14G2 Phototransistor L14G3 phototransistor 650 nm lens emitter phototransistor Infrared phototransistor TO18
Contextual Info: Hermetic Silicon Photosensors TO-18 Detector Package Convex Lens 0.209 (5.31) 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 0.50 (12.7) MIN 0.020 (0.51) 3X Base 0.100 (2.54) 0.050 (1.27) Emitter Part VCE Number (V) Test Conditions Ee ␭p (mW/cm2) (nm) IC (ON)

ST1009

Abstract: st1020 IN6266 L14G1 L14G1 phototransistor IRED L14G Phototransistor L14G2 st1332 1N6266
Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6266 PACKAGE DIMENSIONS DESCRIPTION The 1N6266 is a 940nm LED in a narrow angle, TO-46 package. SEATING FEATURES G ood optical to m echanical alignm ent SYMBOL INCHES MIN. A MILLIMETERS MAX. MIN. .255 NOTES MAX.

TIL702

Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
Contextual Info: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or

Phototransistor L14G3 application

Abstract: L14F1 npn photo transistor L14G2 application note L14F1 phototransistor 2N5777 circuit using l14f1 H11A520 340 opto isolator L14F1 photo transistor 2n5777
Contextual Info: OPTOELECTRONICS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 MIN. PO@ lp=100mA 5.4mW 3.5mW 1.5mW 5.4mW 3.5 mW 1.5mW INFRARED EMITTERS FALL MAX. PEAK EMISSION RISE TIME Vp @ WAVELENGTH TIME lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC.

L14F1 npn photo transistor

Abstract: 4n26 opto isolator 4n27 opto isolator L14F1 phototransistor 4N25-4N26-4N27 4N25-4N26-4N27-4N28 2N5777 2N5780 transistor 531 ge 4n25
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

Contextual Info: [ * 9 GaAs INFRARED EMITTING DIODE ipmutïiftiits 1N6266 The 1N6266 is a 940nm LED in a narrow angle, T M6 package. SEATIN G • Good optical io mechanical alignment SYMBOL A •8>b D Ü0D. a e, h .1 . k i. u JNCHES Ml» MAX. -255 .016 ,203 tao .021

L14F1 phototransistor

Abstract: L14F1 npn photo transistor T1 L14F1 TRANSISTOR 2n5777 phototransistor 340 opto isolator LED55B 2N5777 A3-H11 2N5778 L14G3
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

2n5777 phototransistor

Abstract: L14F1 PHOTOTRANSISTOR 2n5779 Phototransistor L14F1 L14F1 npn photo transistor LED55B photo transistor L14F1 L14G3 phototransistor npn photo transistor H11A2
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

L14F1 PHOTOTRANSISTOR

Abstract: 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAG E NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M E T E R S TYP. n. SEC. TY P. n. SEC . mW

OSI photo detector

Abstract: 1N6266
Contextual Info: Emitter Specifications 1N6266 Infrared Emitter Gallium Arsenide Infrared Emitting Diode <i£•L -• •-A—— ■M a 1 t 00 *?' T he 1N6266 is a gallium-arsenide, infrared emitting diode which emits non-coherent, infrared energy with a peak wavelength o f 940