PHOTOTRANSISTOR 302 Search Results

PHOTO SENSORS

Abstract: diagram ta 306 ic 307 ex photo sensor 700 T55L photo resistance
Contextual Info: O K I electronic com ponents T55L_ Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the OKI T55L silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed TO-18 package.

Contextual Info: O K I electronic components T55L_ Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the OKI T55L silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed TO-18 package.

Contextual Info: PS5132 Phototransistor for Optical Fiber Application Features φ5 type, Water clear epoxy Package Product features ・Through-hole Phototransistor ・Flat Lenz Type ・Photo Current : 6.3mA TYP. VCE=5V,Ee=10mW/cm2 ・No lead package ・RoHS compliant Peak Sensitivity Wavelength

Contextual Info: PS5132 Phototransistor for Optical Fiber Application Features φ5 type, Water clear epoxy Package Product features ・Through-hole Phototransistor ・Flat Lenz Type ・Photo Current : 6.3mA TYP. VCE=5V,Ee=10mW/cm2 ・No lead package ・RoHS compliant Peak Sensitivity Wavelength

Contextual Info: PS5132 Phototransistor for Optical Fiber Application Features φ5 type, Water clear epoxy Package Product features ・Through-hole Phototransistor ・Flat Lenz Type ・Photo Current : 6.3mA TYP. VCE=5V,Ee=10mW/cm2 ・No lead package ・RoHS compliant Peak Sensitivity Wavelength

Contextual Info: KP3020 Series 8PIN PHOTOTRANSISTOR PHOTOCOUPLER cosmo Schematic Description 8 7 6 5 1 2 3 4 The KP3020 series consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a phototransistor detector. They are packaged in an 8-pin DIP package and available in wide-lead spacing

c217

Abstract: MOC215
Contextual Info: Tem ic MOC215-217 S e m i c o n d u c t o r s Surface Mount Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The MOC series consists o f a phototransistor optically coupled to a gallium arsenide infrared emitting diode in

be 303

Contextual Info: Optoisolator Specifications SL5511 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e SL5511 consists o f a gallium arsenide, infrared em itting diode coupled with a silicon phototransistor in a dual in-line package. T h e SL5511 com plies with UTE requirem ents as per UTE C96-551 ADD2.

MOC211

Abstract: OC211 OC212M
Contextual Info: Temic MOC211-213 S e m i c o n d u c t o r s Surface Mount Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The M O C series consists o f a phototransistor optically coupled to a gallium arsenide infrared-em itting diode in

Contextual Info: n iC R O P AC INDUSTRIES INC 42E D SB b l l E b H Q □□□0014 T B9 MPI SILICON PHOTOTRANSISTOR “ PIGTAIL” 61053 TYPE GS 3020 G E N E R A L DESCRIPTION MINIATURE LIGHT SENSOR WITH NARROW ANGULAR RESPONSE GLASS/METAL WELDED HERMETIC PACKAGE Mii 61053 is an N-P-N Silicon Phototransistor in a lensed coaxial package designed to be mounted in a single-clad

camera module af

Abstract: photo interrupter module Reflective Optical Sensor camera phone
Contextual Info: ,0%&/4 * Photo Interrupter Reflective) KPI-3020R (Unit : mm) Dimensions Features • • • • • Miniature Leadfree Surface Mount Package Reflective with Phototransistor Output Reflow Soldering Optical Sensing Distance : 1.0mm RoHS compliant and Lead free package

ST-303

Abstract: ST-302
Contextual Info: Photo transistors KODENSHI ST-302・ST-303 DIMENSIONS Unit : mm The ST-302, 303 a high-sensitivity NPN silicon phototransistor mounted in a clear sidelooking package, is compact, low profile and easy to mount. FEATURES •Low profile package •Compact •Low-cost

QAA27

Abstract: sfh siemens
Contextual Info: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Features Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm

foto transistor

Abstract: 302 phototransistor datasheet phototransistor 302 Q62702-P1623 Q62702-P1624 Q62702-P1625 Q62702-P1626 Q62702-P1627 Q62702-P1641 E F 302
Contextual Info: SFH 302 SFH 302 fet06017 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm

Contextual Info: AU K CORP. Photo Interrupters Reflective KPI-3020R Description KPI-3020R is a very small reflect type of photo interrupter that has phototransistor output, thin and mini-size photo surface mount type of package. Features • Miniature Leadfree Surface Mount Package

camera phone

Abstract: KPI-3020R camera module af
Contextual Info: AUK CORP. Photo Interrupters Reflective KPI-3020R Description KPI-3020R is a very small reflect type of photo interrupter that has phototransistor output, thin and mini-size photo surface mount type of package. Features • Miniature Leadfree Surface Mount Package

foto transistor

Abstract: GETY6017 Q62702-P1641
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar

SMD IC 3029

Contextual Info: TCMT1103-3029 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, Single Channel, Half Pitch Mini-Flat Package Features • • • • • • • • Low profile package half pitch AC Isolation test voltage 3750 VRMS Low coupling capacitance of typical 0.3 pF

302 opto

Abstract: GET06017 Q62702-P1624 Q62702-P1625 Q62702-P1641 npn phototransistor
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar

TCMT1103

Abstract: TCMT1103-3029
Contextual Info: TCMT1103-3029 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, Single Channel, Half Pitch Mini-Flat Package Features • • • • • • • • Low profile package half pitch AC Isolation test voltage 3750 VRMS Low coupling capacitance of typical 0.3 pF

Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar

Infrared Phototransistor 302

Abstract: LTR-5576D 302 phototransistor datasheet LTE-302-M LTE-309 LTR-5986DH phototransistor 302 302 phototransistor if lte LTE-302
Contextual Info: GaAs Plastic Side Look Infrared Emitting Diode LTE-302-M/LTE-309 Features Package Dimensions Selected to specific on-line intensity and radiant intensity ranges. Low cost plastic end looking package. Mechanically and spectrally matched to the LTR-5576D/ LTR-5986DH series of phototransistor.

OPL126A

Contextual Info: Issued July 1985 F4866 High voltage opto-isolator Stocknumber 302-148 The RS OPL126A opto-isolator consists of a GaAsP light emitting diode optically coupled to an NPN silicon phototransistor. The form of construction provides 10kV isolation between input and output, with a minimum

ps3322

Contextual Info: PS3322 Through-hole Phototransistor/φ3 Type Features φ3 type, Water clear epoxy Package Product features ・Photo Current : 3.6mA TYP. VCE=5V,Ee=1mW/cm2 ・Narrow Distribution ・Lead–free soldering compatible ・RoHS compliant Peak Sensitivity Wavelength