PHOTO DIODE 10 GBPS Search Results

photo diode

Abstract: MXP4003 photo diode 10 Gbps pin photo diode MXP4000 sdh microsemi photo diode pin 10 Gbps "Photo Diode" construction of photo diode 1550nm 10mW photo diode
Contextual Info: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.

VCSEL array, 850nm flip

Abstract: MXP7001
Contextual Info: MXP7001 I N T E G R A T E D P R O D U C T S 10 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission

Contextual Info: VC850M-H-TO46FW-PD v 1.3 15.05.2014 Description VC850M-H-TO46FW-PD is a multi mode infrared VCSEL emitting at typically 850 nm with rated output power of 10 mW cw, mounted into a standard TO-46 package, containing a monitor photo diode and sealed with a flat window cap. The VCSEL works under low forward current and voltage and with 1 Gbps

PDF PIN PHOTO DIODE DESCRIPTION

Abstract: OD9602N OD9604N photo diode circuit Photo Modules OD9601N photo amplifier application circuit 8pin
Contextual Info: DATA SHEET O K I L A S E R P R O D U C T S OD9601N 1.25 Gbps OD9602N (622 Mbps) OD9604N (2.488 Gbps) + 3.3-V Photo Diode Preamp Modules February 2000 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

VCSEL array, 850nm flip

Abstract: VCSEL array, 850nm, flip chip amplifier CV 203 VCSEL array, 850nm GaAs array, 850nm PIN photodiode 850nm LX3044 LX3045 LX3046 PIN PHOTO DIODE
Contextual Info: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes

Contextual Info: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes

LX3051

Abstract: InGaAs P InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2 InGaas PIN photodiode chip
Contextual Info: LX3051 3.125 Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATA SHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX3051 3 Gbps coplanar

vcsel receiver

Abstract: MXP7002 IR 2E09 850nm 300 nA photo Diode
Contextual Info: MXP7002 I N T E G R A T E D P R O D U C T S 3.125 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission

MXP7002

Abstract: IR 2E09
Contextual Info: MXP7002 I N T E G R A T E D P R O D U C T S 3.125 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission

construction of photo diode

Abstract: photo diode array amplifier MXP7A02 GaAs array, 850nm IR PHOTO DIODE amplifier 207UM
Contextual Info: MXP7A02 – 1x4 Array 3.125 Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks

PIN PHOTO DIODE

Abstract: "Photo Diode" photo diode construction of photo diode MXP4002 IR PHOTO DIODE amplifier MXP4000
Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.

CMS101K2KC

Abstract: KGA4130D Tecdia transimpedance amplifier 5 GHz GTD-18408
Contextual Info: Preliminary Data Sheet December 1999 1KGA4130D 10Gbps AGC Transimpedance Amplifier IC DESCRIPTION Oki's 10 Gbps transimpedance amplifier is fabricated 0.1µm gate length P-HEMTs for high-speed optical communication. The IC has a large transimpedance, high sensitivity and a wide dynamic range.

1550nm photo diode for 10Gbps

Abstract: MXP4003 MXP4005
Contextual Info: MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. . The MXP400X series of photo diodes are currently offered in die

amplifier CV 203

Abstract: VCSEL array, 850nm flip VCSEL array, 850nm, flip chip VCSEL array, 850nm LX3045 LX3044 LX3046 LX304X 75um
Contextual Info: LX3044 / 45 / 46 I N T E G R A T E D 10.3 Gbps Coplanar GaAs PIN Photo Diode P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION LX3044 Single Die LX3045, 1x4 Array Die LX3046, 1x12 Array Die Coplanar Waveguide , 50ohm High Responsivity Low Dark Current

1550nm photo diode for 10Gbps

Abstract: construction of photo diode MXP4005 1550nm catv receiver MXP4003 IR PHOTO DIODE amplifier 1550nm optical device 1550nm 10mW photo diode
Contextual Info: MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400X series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.

Contextual Info: OD9604N Photo Diode Preamp Module 2.488 Gbps InGaAs Technology + 3.3 V INTRODUCTION Oki Semiconductor’s OD9604N PD Preamp Module is a surface-mount 1.3-µm, InGaAs PIN photo diode combined with a transimpedance amplifier. This OD9604N is designed to operate at 2.488 Gbps in

1550nm catv receiver

Abstract: MXP4000 MXP4001 MXP4002 MXP4003 1430nm
Contextual Info: MXP4003 – 12.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

construction of photo diode

Abstract: MXP4001 MXP4003 MXP4000 MXP4002 PHOTO diode
Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

PIN photodiode responsivity 1550nm 1.1

Abstract: Photodiode 1550nm bandwidth 1310nm Receivers LX3051 441-GHz 1550nm photodiode 5 Ghz diode 0 dB 1550nm IR 2E09 sensitivity dB photodiode pin 1550nm InGaAs Photodiode 1550nm
Contextual Info: LX3051 3.125 Gbps I N T E G R A T E D P R O D U C T S Coplanar InGaAs/InP PIN Photo Diode PRELIMINARY DATA SHEET KEY FEATURES DESCRIPTION gurations including traditional wirebond or flip chip assembly This device is ideal for manufacturers of optical receivers,

VCSEL array, 850nm

Abstract: GaAs array, 850nm LX3044 LX3044-TR LX3045 LX3046 VCSEL array, 850nm flip
Contextual Info: Obsolete Product – Not Recommended For New Design LX3044 / 45 / 46 I N T E G R A T E D 10.3 Gbps Coplanar GaAs PIN Photo Diode P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION LX3044 Single Die LX3045, 1x4 Array Die LX3046, 1x12 Array Die

Contextual Info: OD9601N Photo Diode Preamp Module 1.25-Gbps InGaAs Technology + 3.3 V INTRODUCTION Oki Semiconductor’s OD9601N PD Preamp Module is a surface-mount 1.3-µm, InGaAs PIN photo diode combined with a transimpedance amplifier. This OD9601N is designed to operate at 1.25 Gbps in

48LD

Abstract: ADN2841 ADN2847 ADN2850 lcv132cc automatic light control with photo diode CIRCUIT DIAGRAM
Contextual Info: PRELIMINARY TECHNICAL DATA MULTIRATE DUAL LOOP 155Mbps to 2.7Gbps LASER DIODE DRIVER a ADN2841 Preliminary Technical Data FEATURES 155Mbps to 2.7 Gbps Operation Typical rise/fall time 80 ps Bias Current range 2 to 100 mA Modulation Current range 5 to 80 mA