PHOENIX MICROWAVE Search Results

Contextual Info: AMPLIFIERS Phoenix M icrowave has used its unique RF circuit design capabilities and thick-film hybrid expertise to produce an extensive line o f amplifiers for a wide variety o f commercial and military system applications. Beginning with a small focused line o f cascadable amplifier in 1987, Phoenix Microwave’s amplifier family has now grown to include over 1000 types to choose from for an almost

Contextual Info: PHOENIX WIRELESS SHORT FORM PRODUCTS CHART AMPLIFIERS Phoenix L ow H igh M in. T yp. M ax. Typ. M in. Typ. Typ. Typ. N om . Typ. M odel Freq. F req. G ain G ain NF Pout P out IP3 Isol. V olt C urrent C ase P age (MHz.) (MHz.) (dB.) (dB.) (dB.) (dB.) (dBm.) (dBm.) (dBm.) (dB.)

H R C M F 2J

Contextual Info: INTEG RATED ASSEM BLIES Phoenix Microwave Corporation has been supplying high volume integrated assemblies to both the commercial and military m arket place for several years. These assemblies integrate varied functional blocks in one convenient package to

Contextual Info: LPA Telecommunication Application Note INTRODUCTION. The Phoenix Microwave LPA Linear Amplifier Modules provide ultra-linear performance at economical prices. These modules cover the popular 800 to 960 MHz and 1800 to 2000 MHz frequency ranges. New types

Contextual Info: Quality Assurance & Reliability Since its inception, Phoenix Microwave Corp. has been dedicated to provide high quality spec-compliant components to our valued customers. Quality and reliability are first and foremost throughout all levels of the organization and are

724 motorola NPN Transistor

Abstract: motorola transistor r 724 MRF2010M motorola rf Power Transistor transistor amplifier 3 ghz 10 watts MRF201 MOTOROLA POWER TRANSISTOR 14 DS5802 Motorola 406 MRF2010
Contextual Info: Order this document by MRF2010M/D M MOTOROLA MRF2010M SEMICONDUCTORS P.O. BOX 20912 • PHOENIX, ARIZONA 85036 The RF Line 10W M ICRO W AVE POWER TRANSISTO R NPN SILICON MICROWAVE POWER TRANSISTOR . . . designed for Class B and C comm on base broadband amplifier

PA-1023

Contextual Info: CATV & WIRELESS PRODUCTS CELLULAR K M CPS VSAT CAT'/ V/LAM ISM ULTRA LINEAR HIGH INTERCEPT AMPLIFIERS Phoenix Microwave Corp. has in­ troduced new products for the de­ manding specifications required by the communications market place. In­ cluded in this brochure are ultra-linear

PS619

Abstract: PS678
Contextual Info: ATTENUATORS Phoenix Microwave’s extensive thick film processing technology coupled with state-of-the art designs, has resulted in a unique line of TTL-controlled digital attenuators covering a wide range of RF and Microwave frequencies. Exceptional step accuracy and guaranteed monotomic behavior are the main features of these

Contextual Info: C om pany back g ro und Phoenix Microwave Corp. was founded by a team of engineers and businessmen with long and extensive experience in the com­ mercial and military microwave component industry. It is a pri­ vately owned small business concern housed in a 25,000 sq. ft.

WILTRON

Contextual Info: E pffeDiaCS*SALES REPRESENTATIVES U.S. & CANADIAN Alabama, Georgia, Mississippi, S. Carolina Arizona California Northern California (Southern) Youngewirth & Olenick 4855 E. Warner Road Suite 24-138 Phoenix, AZ 85044 Tel: (800) 515-1554 Fax: (800) 515-1574

PA988

Abstract: PA381 PA195 PA1032 PS605 phoenix pa880 PS665 PS668
Contextual Info: PH O ENIX MICROWAVE ALPHANUMERIC P/N LISTING Phoenix C atalog P/N Page # PA002 PA005 PA010 PA015 PA030 PA050 PA055 PA056 PAIO PAI 00 PAI 10 PAI 12 PAI 20 PAI 50 PAI 62 PAI 70 PAI 77 PAI 79 PAI 80 PAI 81 PA190 PA191 PA195 PAI 96 PAI 97 PA198 PA209 PA211 PA219

SIT Static Induction Transistor

Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
Contextual Info: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are

TRW62601

Abstract: 328A-03 BALLAST MOTOROLA Motorola 305 motorola rf Power Transistor RF TRANSISTOR 1 WATT TP62601
Contextual Info: MOTOROLA Order this document by TP62601/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Oscillator Transistor TP62601 . . . designed for use as power oscillators at frequencies to 3.0 GHz with typical output power of over 1.0 watt. • Operation to 3.0 GHz

6 watts resistor

Abstract: MRF16006 motorola rf Power Transistor
Contextual Info: MOTOROLA Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz

Contextual Info: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz

transistor 955 MOTOROLA

Abstract: MRF16006
Contextual Info: MOTOROLA Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR

Motorola Microwave power Transistor

Abstract: MRF16006 Transistor MRF16006
Contextual Info: MOTOROLA Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz

motorola rf Power Transistor

Abstract: Motorola Microwave power Transistor MRF10005 J189 j112 motorola
Contextual Info: MOTOROLA Order this document by MRF10005/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Transistor MRF10005 . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high

Contextual Info: MOTOROLA Order this document by MRF1090MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1090MA Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc

Contextual Info: MOTOROLA Order this document by MRW2001/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Transistors MRW2001 MRW2005 Designed primarily for large–signal output and driver amplifier stages in the 1.0 to 2.3 GHz frequency range. • Designed for Class B or C, Common Base Power Amplifiers

Motorola transistors MRF3104

Abstract: MRF3104 MRF3105 MRF3106
Contextual Info: MOTOROLA The RF Line MRF3104 MRF3105 MRF3106 Microwave Linear Power Transistors • Designed for Class A, Common Emitter Linear Power Amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics: MRF3104 MRF3105 MRF3106 0.5 W 10.5 dB 0.8 W 9 dB 1.6 W 8 dB Output Power

MRF1004MA

Abstract: TACAN TACAN 41 J295
Contextual Info: MOTOROLA Order this document by MRF1004MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1004MA Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.

MRF10120

Abstract: motorola rf Power Transistor MOTOROLA 381 equivalent transistor j222 J280
Contextual Info: MOTOROLA Order this document by MRF10120/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Long Pulse Power Transistor MRF10120 Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc

transistor j222

Abstract: MOTOROLA 381 equivalent motorola transistor 307 MRF10120 motorola rf Power Transistor
Contextual Info: MOTOROLA Order this document by MRF10120/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Long Pulse Power Transistor MRF10120 Designed for 960 – 1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc