PHILIPS ID 27 Search Results

Contextual Info: N AHER PHILIPS/DISCRETE bTE I> • bb53T31 D02bb00 flSO « A P X Philips specification BYD71 series Epitaxial avalanche diodes DESCRIPTION Rectifier diodes in hermetically sealed axial-leaded ID implosion

Contextual Info: Philips Semiconductors Product specification FLEX Pager Decoder PCD5008 CONTENTS 8.6.7 8.8.3 8.8.4 8.8.5 8 .8.6 8.8.7 Configuration of assigned frames and pager collapse ID = 20H to 27H Configuration of assigned phase Call data packets General Address packet (ID = 01H)

IRFP150N equivalent

Abstract: IRF3710 equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540
Contextual Info: VDS RDS ON ID Package Philips VDS RDS(ON) ID Rating RDS(ON) IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D IRFS33N15D IRFS59N10D IRFZ24N IRFZ24S IRL1104S IRL2203NS IRL3103 IRL3103S IRL3215 IRL3705N IRL3803 IRL3803S IRLL014 IRLML2803 IRLR024N IRLZ24N

BYD14

Contextual Info: N AUER PHILIPS/DISCRETE bb53T31 002bS52 27fl • APX BYD14 SERIES b^E D L M AINTENANC E TYPE CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID * envelopes and intended fo r general purpose rectifier applications.

c82 004

Abstract: C4V7 517
Contextual Info: N AUER PHILIPS/DISCRETE b=JE P • bb53^31 002b?ll 517 P hilips S em BZD23 series Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass

cARRIER TSTAT-15

Abstract: xa-c37 06805 PXAC37KFA
Contextual Info: INTEGRATED CIRCUITS XA-C3 XA 16-bit microcontroller family 32K/1024 OTP CAN transport layer controller 1 UART, 1 SPI Port, CAN 2.0B, 32 CAN ID Filters, transport layer co-processor Preliminary specification Supersedes data of 1999 Dec 20 Philips Semiconductors

PSMN057-200B

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN057-200B SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 39 A

PSMN060-200P

Abstract: PSMN057-200P
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN057-200P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 39 A

PHX23NQ10T

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHX23NQ10T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching d VDSS = 100 V ID = 13 A g RDS ON ≤ 70 mΩ s GENERAL DESCRIPTION

Contextual Info: Philips Semiconductors bbS3T31 DDEbblD 7TT * A P X Epitaxial avalanche diodes Product specification BYD73 series N AMER P H IL IP S /D IS C R E T E DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID implosion diode envelopes. They

IRF530N

Abstract: IRF530N applications
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF530N SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 17 A g RDS ON ≤ 110 mΩ

74LVT162244B

Abstract: SSOP48
Contextual Info: Philips Semiconductors Product specification 7A. w-riCOo/i/iD 3.3V 16-bit buffer/driver with 30£2 termination resistors 3-State 74LVT162244B FEATURES DESCRIPTION • 16-bit bus interface The 74LVT162244B is a high-performance BiCMOS product designed for V qc operation at 3.3V.

DAF41

Abstract: nf schaltungen
Contextual Info: PHILIPS Id â R ï DIODE-PENTODE for use as A.F. amplifier in battery receivers DIODE-PENTHODE pour utilisation en amplificatrice B.F. dans des appareils-batterie DIODE-PENTODE zur Verwendung als NF-Verstärker Batteriegeräten Heating : direct by D.C. series or parallel supply

UHF transistor GHz

Abstract: BFG93AW DD44 pa 4010
Contextual Info: Product specification Philips Semiconductors BFG93AW BFG93AW/X; BFG93AW/XR NPN 7 G H z w id eb an d tra n s isto r MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG93AW R8 • Gold m etallization ensures excellent reliability. BFG93AW/X

Contextual Info: N AMER PHILIPS/DISCRETE bb53^31 DDEbbEO b4^ H A P X b'lE J> _ 1 BYD74 SERIES EPITAXIAL AVALANCHE DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID* envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching characteristics

byd74

Abstract: BYD74E BYD74A BDY74A
Contextual Info: SbE » 711002b 0CI40bl7 101 • PHIN BYD74 SERIES PHILIPS INTERNATIONAL SbE ]> v n m n m i v EPITAXIAL AVALANCHE DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID * envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching characteristics

philips bsd215

Abstract: BST110 BF909WR
Contextual Info: Philips Semiconductors Selection guide Small-signal Field-effect Transistors N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER ± V Ds PACKAGE V Id Ig (mA) ly ts l ss “ V (P )G S min - max (mA) min. (mS) (V ) C r, PAGE (PF) Hi-fi amplifiers and AF equipment

transistor marking MTs ghz

Abstract: transistor marking P8 UHF transistor GHz Xr 1075 BFG92AW D032 y1010
Contextual Info: Product specification Philips Semiconductors B FG 92A W B FG 92A W /X; B F G 92A W /X R NPN 6 G H z w id eb an d tra n s isto r MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG92AW • Gold metallization ensures excellent reliability.

9632 transistor

Abstract: high gain low capacitance NPN transistor transistor 9632 BFG67W transistor marking CODE S4b transistor equivalent 1047
Contextual Info: Product specification Philips Semiconductors B F G 67W B FG 67W /X ; B F G 67W /X R N PN 8 G H z w id eb an d tra n s isto r M ARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG67W V2 • Gold metallization ensures excellent reliability.

BTi36

Abstract: bti36f IBT136 bt 136f triac BT 24 BT136F M2284 mullard bt Mullard circuit
Contextual Info: Philips Components b u m f s e r ie s _ J ^-FULL-PACK TRIACS Glass-passivated 4 ampere triacs in SO T-186 envelopes, w h ic h fea ture an ele ctrica lly isolated seating plane. T h ey are intended fo r use in applications requiring high b id ire ctio n a l tra nsient and blockin g

TAG 84 triac

Abstract: triac BT 140 TRIAC BT 139 TRIAC TAG 90 bt139 BT139G TRIAC TAG 96 bt139 Application BT139 Series E M1646
Contextual Info: PHILIPS INTERNATIONAL bSE » B 711DÖSL 00L.2307 ITO I BT139 SERIES TRIACS Glass-passivated 1 6 am pere triacs intended fo r use in applications requiring high b id irectio n a l tran sien t and b locking voltage c a p a b ility , and high th erm al cycling perform an ce w ith very lo w th erm al resistances,

BR210-100

Contextual Info: Philips Components BR210 s e r ie s _ A_ Supersedes February 1988 data BREAKOVER DIODES A range o f glass-passivated b id ire c tio n a l breakover diodes in the TO -220 A C o u tlin e , available in a + /— 12% tolerance series o f nom inal breakover voltage. T h e ir c o n tro lle d breakover voltage and peak

Contextual Info: N AMER PHILIPS/DISCRETE S5E D • bfc.SB'm QQlb2b2 □ ■ Optoelectronic Devices RECEPTACLES ENCAPSULATIONS TYPE PA CK A G E O U TL IN E B EAM G U ID - LA SER D IA M ETER W AVE­ LE N G TH O P TIC A L O PER A TIN G O PER A TIN G DIFFERENTIAL POW ER C U R R EN T

74LVC16240A

Abstract: 74LVC16244A SSOP48 TSSOP48
Contextual Info: Philips Sem iconductors Product specification 16-bit buffer/line driver; inverting 3-State 74LVC16240A PIN CONFIGURATION FEATURES • 5 v o lt to le ra n t in p u ts /o u tp u ts fo r in te rfa c in g w ith 5V logic • W id e s u p p ly v o lta g e ra n g e o f 1 .2 V to 3 .6 V