PHILIPS FXC 3 B Search Results

Philips 4312 020

Abstract: BLV25 Philips 2222 ferrite fxc3b fxc3b PHILIPS 4312 blw 64 rf transistor PHILIPS 4312 amplifier philips rf choke ferrite 151 schematic for 88 to 108 amplifier
Contextual Info: APPLICATION NOTE Wideband 300 W push-pull FM amplifier using BLV25 transistors AN98031 Philips Semiconductors Wideband 300 W push-pull FM amplifier using BLV25 transistors CONTENTS 1 INTRODUCTION 2 AMPLIFIER DESIGN THEORY 2.1 2.2 2.3 The output network The input network

Contextual Info: N AMER PHILIPS/DISCRETE 860 ObE » • bbS3^31 0013^22 1 D 01684 BLX13 V H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended fo r s.s.b. in class-A and AB and in f.m . transm itting appli­ cations in class-C w ith a supply voltage up to 28 V, The transistor is resistance stabilized and tested

philips blx14

Abstract: BLX14
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3T31 DQ2TSbl T52 I BLX14 H .F./V .H .F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, AB and B operated transmitting equipment in the h.f. and v.h.f. band. • rated fo r 50 W P.E.P. at 1,6 MHz to 28 MHz

BLX13

Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971
Contextual Info: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested

BLX14

Abstract: philips Fxc 3 b philips blx14 transistor EP 430 toroid LA Toroid International AB ES28 transistor application VCE28 neutralization push-pull
Contextual Info: m b5E D 711DöSb DQb3H50 430 • PHIN BLX14 PHILIPS INTERNATIONAL J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, A B and B operated transmitting equipment in the h.f. and v.h.f. band. • rated for 50 W P.E.P. at 1,6 M H z to 28 M H z

DCS foxboro

Abstract: transistor 2n2222 Philips Electrolytic Capacitor 2200uf gsm signal amplifier NPN transistor 2n2222 C5 MARKING TRANSISTOR gsm circuit diagram philips Trimmers transistor 2N2222 PHILIPS TRANSISTOR 2n2222 p1
Contextual Info: Application Note Using the BLF1820-90 LDMOS Transistor for PCS band GSM and EDGE GSM Applications AN10229_1 Philips Semiconductors TPAN02_02W97 Philips Semiconductors Using the BLF1820-90 LDMOS Transistor for PCS band GSM and EDGE GSM Applications Application Note

SAA2500

Contextual Info: Philips Semiconductors Preliminary specification MPEG Àudio Source Decoder SAA2500 FEATURES APPLICATIONS • Advanced error protection • Cable and satellite digital radio decoders • Integrated audio post processing for control of signal level and inter-channel crosstalk