PHILIPS DIODE PH 15 Search Results
PHILIPS DIODE PH 15 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ24V |
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Zener Diode, 24 V, USC | Datasheet | ||
| CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
| CEZ5V6 |
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Zener Diode, 5.6 V, ESC | Datasheet |
PHILIPS DIODE PH 15 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
AV73
Abstract: Js SMD MARKING CODE SOT23 sot23 package marking AV smd DIODE code marking kA SMD IC marking 632 lm 9805
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BAV73 117027/00/01/pp8 AV73 Js SMD MARKING CODE SOT23 sot23 package marking AV smd DIODE code marking kA SMD IC marking 632 lm 9805 | |
BUK637-500BContextual Info: N APIER PH ILIPS/DISCR ETE bRE D • bbSBTBl 00 3 0 fl 7 D Philips Semiconductors *APX Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode |
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BUK637-500B BUK637-500B | |
DIODE T25 4 EO
Abstract: DIODE T25 4 bo DIODE T25 4 ko diode,FET BUK627-500B DIODE T25-4-bo
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-SOT199 BUK627-500B 71IDA2b T-39-11 711GflEb 0044S10 DIODE T25 4 EO DIODE T25 4 bo DIODE T25 4 ko diode,FET BUK627-500B DIODE T25-4-bo | |
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Contextual Info: bbS3T31 Philips Semiconductors DD2bfl32 122 B i APX Product specification Low voltage avalanche diode PLVA400A N AUER PHILIPS/DISCRETE FEATUR ES DESCRIPTION • Very low dynamic impedance at low currents: approximately V£o of conventional series The PLVA400A series are silicon |
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bbS3T31 DD2bfl32 PLVA400A PLVA400A aPLVA456A PLVA459A PLVA462A PLVA465A PLVA468A PLVA459A | |
IP4220CZ6
Abstract: C 13 PH Zener diode ph-200 diode C 12 PH Zener diode IP4220 IP4220CZ6_4 zener diode capacitance ph 12 c zener diode C 11 PH Zener diode
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IP4220CZ6 IP4220CZ6 C 13 PH Zener diode ph-200 diode C 12 PH Zener diode IP4220 IP4220CZ6_4 zener diode capacitance ph 12 c zener diode C 11 PH Zener diode | |
Fast Gate Turn-Off Thyristors
Abstract: BTW58
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O-220AB BTW58â 1000R 1300R 1500R QDin72 BTW58 Fast Gate Turn-Off Thyristors | |
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Contextual Info: N AMER PHILIPS/DISCRETE Qonasa 2 • DbE D BT157 SERIES I i FAST GATE TURN-OFF THYRISTORS Thyristors in TO-220AB envelopes capable o f being turned both on and o ff via the gate. They are suitable for use in high-frequency inverters, resonant power supplies, horizontal deflection systems etc. |
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BT157 O-220AB 1500R BT157â 1300R | |
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Contextual Info: DEVELOPMENT DATA BTV160DV SERIES This data sheet contains advance information and _are subject to change without notice. n 'a m e r p h i l i p s /d i s c r e t e ObE D • ’bbS3*i31 O O i n D S S ■ FAST GATE TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODE |
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BTV160DV 1200R | |
byv26c ph
Abstract: philips diode PH 15
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BYV26 BYV26A BYV26C BYV26D BYV26B BYV26E byv26c ph philips diode PH 15 | |
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Contextual Info: JJL DtE D N AMER PHILIPS/DISCRETE ^ 53=131 0Diifli3 t BTV58 SERIES FAST GATE TURN-OFF THYRISTORS ! Thyristors in TO-220AB envelopes capable of being turned both on and off via the gate. They are suitable for use in high-frequency inverters, power supplies, motor control etc. The devices have no |
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BTV58 O-220AB 1000R | |
BUK655-500B
Abstract: T0220AB
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BUK655-500B T0220AB dSiV-100/ /C-156 | |
Diode PH 13D
Abstract: Diode PH 13K 13D-PH BYD13M Diode PH 13M philips diode PH 15 BYD13 BYD13D BYD13G BYD13J
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M3D119 BYD13 MAM123 Diode PH 13D Diode PH 13K 13D-PH BYD13M Diode PH 13M philips diode PH 15 BYD13D BYD13G BYD13J | |
EBC81 TUBE
Abstract: EBC 81 ebc81 939 diode 21958 tube double triode rs tube PF09
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Contextual Info: N AMER PHILIPS/DISCRETE b'lE D bbS3T31 DD3D7DD 1Tb BIAPX Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in |
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bbS3T31 O220AB BUK457-400B | |
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philips potentiometer
Abstract: 7z25 cqf23/d42 laser diode 780 nm Semiconductor Laser International 0GE414M ALF4 FC-722 GENERAL SEMICONDUCTOR SM 3b diode
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71IDfiEfci CQF23/D 7Z25313 CQF23/D43; CQF23/D44; 711002b 002M1SM philips potentiometer 7z25 cqf23/d42 laser diode 780 nm Semiconductor Laser International 0GE414M ALF4 FC-722 GENERAL SEMICONDUCTOR SM 3b diode | |
GATE TURN-OFF THYRISTORS SOT-93Contextual Info: N A ME R PHILIPS/DISCRETE QbE D 3 ^ 5 3 ^ 3 1 o a n a a i 3 BTS59 SERIES FAST GATE TURN-OFF THYRISTORS Thyristors in SOT-93 envelopes capable o f being turned both on and o f f via the gate. They are suitable fo r use in high-frequency inverters, power supplies, m otor con tro l etc. The devices have no |
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BTS59 OT-93 BTS59-850R 1000R bbS3T31 GATE TURN-OFF THYRISTORS SOT-93 | |
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Contextual Info: DISCRETE SEMICONDUCTORS BSH301 Dual N-channel enhancement mode MOS transistor Objective specification Philips Sem iconductors 1999 Apr 06 PHILIPS Philips Semiconductors Objective specification Dual N-channel enhancement mode MOS transistor BSH301 FEATURES |
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BSH301 BSH301 OT53Q) OT53Q 135002/00/01/pp5 | |
MS0038
Abstract: M33033 CNY17GF CNY17G-3 phototransistor philips CNY17G-1 philips 23 BS415 BS7002 CNY17G
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003Q5S1! CNY17G/CNY17GF CNY17G CNY17GF OT231 CNY17GF. CNY17G MS0038 M33033 CNY17G-3 phototransistor philips CNY17G-1 philips 23 BS415 BS7002 | |
t4185
Abstract: Optocoupler 601 Philips MBB two leg infrared receiver led BS415 BS6301 BS7002
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711QB2b 003046a T-41-85 CNW138/CN E90700 BS415 BS7002 BS6301 t4185 Optocoupler 601 Philips MBB two leg infrared receiver led | |
marking code PH 817
Abstract: BYD17 BYD17D BYD17G BYD17J BYD17K BYD17M M3D121 17JPH
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M3D121 BYD17 MAM061 135002/03/pp8 marking code PH 817 BYD17D BYD17G BYD17J BYD17K BYD17M M3D121 17JPH | |
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Contextual Info: N AUER PHILIPS/DISCRETE bRE D • bbS3R31 002fl37b 724 « A P X Philips specification Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic |
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bbS3R31 002fl37b BU2520D bbS3T31 | |
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Contextual Info: N AMER PHILIPS/DISCRETE blE D bbS3^31 0026244 233 • IAPX BU505F BU505DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in horizontal deflection circuits o f colour television receivers. |
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BU505F BU505DF OT186 BU505DF BU505DF) 5fl24T | |
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Contextual Info: N AMER PH IL I P S / D I S C R E T E T> bbS3^31 00 30 4 5 5 550 • APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in |
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BUK436-60A/B BUK436 | |
diode code ae
Abstract: invisible
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CQL75A/D CQL75A/D diode code ae invisible | |