PHILIPS DIODE PH 13 Search Results

AV73

Abstract: Js SMD MARKING CODE SOT23 sot23 package marking AV smd DIODE code marking kA SMD IC marking 632 lm 9805
Contextual Info: DISC RETE SE M IC O N D U C TO R S InlEET BAV73 Dual high-speed switching diode in common cathode configuration 1997 May 06 Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors PH ILIPS PHILIPS Philips S e m i c o n d u c t o r s

BUK637-500B

Contextual Info: N APIER PH ILIPS/DISCR ETE bRE D • bbSBTBl 00 3 0 fl 7 D Philips Semiconductors *APX Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode

DIODE T25 4 EO

Abstract: DIODE T25 4 bo DIODE T25 4 ko diode,FET BUK627-500B DIODE T25-4-bo
Contextual Info: Philips Components Data sheet status P ro d u c t s p e c ific a tio n date of issue March 1991 PH ILIP S N -channel en han cem en t m ode field-effect pow er transistor in a plastic full pack envelope. F R E D F E T with fast recovery reverse diode, particularly suitable

Contextual Info: JJL DtE D N AMER PHILIPS/DISCRETE ^ 53=131 0Diifli3 t BTV58 SERIES FAST GATE TURN-OFF THYRISTORS ! Thyristors in TO-220AB envelopes capable of being turned both on and off via the gate. They are suitable for use in high-frequency inverters, power supplies, motor control etc. The devices have no

t4185

Abstract: Optocoupler 601 Philips MBB two leg infrared receiver led BS415 BS6301 BS7002
Contextual Info: PHILIPS 4 1E INTERNATIONAL ]> •1 7110B2b 003046a 5 ■ P H IN T—4 1 -8 5 Philips Semiconductors Product specification W ide body, high isolation/high-gain o pto co up lers C N W 1 38 /C N W 139 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm

Contextual Info: D EVELO PM EN T DATA This data sheet contains advance Information and specifications are subject to change without notice. • ^53=131 0021115 3 ■ 4N46 | I - N AUER P H I L I PS/DISCRETE SSE D T ' f f - & £ T GaAIAs, RESISTOR-DARLINGTON, OPTOCOUPLER

BUK438-500B

Contextual Info: b^E D N AMER PH ILI PS/ DI SC RE TE • bbS3R31 0D3D4R5 137 H A P X Product Specification Philips Semiconductors BUK438-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: bbS3T31 Philips Semiconductors DD2bfl32 122 B i APX Product specification Low voltage avalanche diode PLVA400A N AUER PHILIPS/DISCRETE FEATUR ES DESCRIPTION • Very low dynamic impedance at low currents: approximately V£o of conventional series The PLVA400A series are silicon

IP4220CZ6

Abstract: C 13 PH Zener diode ph-200 diode C 12 PH Zener diode IP4220 IP4220CZ6_4 zener diode capacitance ph 12 c zener diode C 11 PH Zener diode
Contextual Info: IP4220CZ6 Dual USB 2.0 integrated ESD protection to IEC 61000-4-2 level 4 Rev. 04 — 12 September 2005 Product data sheet 1. Product profile 1.1 General description The IP4220CZ6 is designed to protect I/O lines sensitive to capacitive load, such as USB 2.0, ethernet, DVI etc. from damage due to ElectroStatic Discharge ESD . It incorporates

GD44S

Abstract: BUK471 BUK471-60A BUK471-60B
Contextual Info: PH IL IP S I N T E R N A T I O N A L Data sheet status Preliminary specification date of issue March 1991 SbE ] • 7 1 1 0 fl2 b DGMMS?«! 137 M P H I N BUK471-60A/B PowerMOS transistor Replaces BUK441-60A/B GENERAL DESCRIPTION N-channei enhancement mode

Fast Gate Turn-Off Thyristors

Abstract: BTW58
Contextual Info: 1 AilER PHILIPS/DISCRETE^ ^ ~ O b E J > 53^31 0 0 1 1 % 1 1 BTW 58 SERIES T ' 2 S - l£ T FAST GATE TURN-OFF THYRISTORS Thyristors in TO-220AB envelopes capable o f being turned both on and o ff via the gate. They are suitable fo r use in high-frequency inverters, resonant power supplies, motor control, horizontal

Contextual Info: N AMER PH ILI PS/ DI SCR ETE 5 SE D E V tLU P M LN I UAI A J> M bbS 3 T 31 00534=13 5 • BYT230PIV200-400 This data sheet contains advance information and specifications are subject to change w ithout notice. /

Contextual Info: N AMER PHILIPS/DISCRETE Qonasa 2 • DbE D BT157 SERIES I i FAST GATE TURN-OFF THYRISTORS Thyristors in TO-220AB envelopes capable o f being turned both on and o ff via the gate. They are suitable for use in high-frequency inverters, resonant power supplies, horizontal deflection systems etc.

Contextual Info: DEVELOPMENT DATA BTV160DV SERIES This data sheet contains advance information and _are subject to change without notice. n 'a m e r p h i l i p s /d i s c r e t e ObE D • ’bbS3*i31 O O i n D S S ■ FAST GATE TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODE

BUK655-500B

Abstract: T0220AB
Contextual Info: P H ILIPS bSE D INTER NAT ION AL ES 7 1 1 0 6 2 b D0bH31b TTö • PHIN Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET G EN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.

Diode PH 13D

Abstract: Diode PH 13K 13D-PH BYD13M Diode PH 13M philips diode PH 15 BYD13 BYD13D BYD13G BYD13J
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D119 BYD13 series Controlled avalanche rectifiers Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 24 Philips Semiconductors Product specification Controlled avalanche rectifiers

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D bbS3T31 DD3D7DD 1Tb BIAPX Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Diode PH 13D

Abstract: Diode PH 13K BYD13M Diode PH 13M 13D-PH BYD13J BYD13K BYD13 BYD13D BYD13G
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D119 BYD13 series Controlled avalanche rectifiers Product specification Supersedes data of April 1992 1996 May 24 Philips Semiconductors Product specification Controlled avalanche rectifiers BYD13 series

Contextual Info: bb53T31 o o i n n DEVELOPMENT DATA 6TV160V SERIES This data sheet contains advance information and specifications ere subject to change without notice. ObE D N AMER PHILIPS/DISCRETE FAST GATE TURN-OFF THRYRISTORS Thyristors in IS O T O P envelopes with electrically isolated metal baseplates capable of being turned

philips potentiometer

Abstract: 7z25 cqf23/d42 laser diode 780 nm Semiconductor Laser International 0GE414M ALF4 FC-722 GENERAL SEMICONDUCTOR SM 3b diode
Contextual Info: Aif D E V E L O P M E N T DATA 1 4 1989 C Q F 23/D SERIES This data sheet contains advance inform ation and specifications are subject to change w ith o u t notice. 41E D a PHILIPS T -Y b o y . 7 1 IDfiEb 0054143 7 EI PHIN ¿a-/ INTERNATIONAL MULTIMODE CO NNECTORIZED LASER DIODE FAMILY

GATE TURN-OFF THYRISTORS SOT-93

Contextual Info: N A ME R PHILIPS/DISCRETE QbE D 3 ^ 5 3 ^ 3 1 o a n a a i 3 BTS59 SERIES FAST GATE TURN-OFF THYRISTORS Thyristors in SOT-93 envelopes capable o f being turned both on and o f f via the gate. They are suitable fo r use in high-frequency inverters, power supplies, m otor con tro l etc. The devices have no

Contextual Info: DISCRETE SEMICONDUCTORS BSH301 Dual N-channel enhancement mode MOS transistor Objective specification Philips Sem iconductors 1999 Apr 06 PHILIPS Philips Semiconductors Objective specification Dual N-channel enhancement mode MOS transistor BSH301 FEATURES

MS0038

Abstract: M33033 CNY17GF CNY17G-3 phototransistor philips CNY17G-1 philips 23 BS415 BS7002 CNY17G
Contextual Info: PH ILIPS MIE D INTERNATIONAL • 711Qû2b QG3asaM S M P H I N r - y P h ilip s S e m ic o n d u c to rs / - 8 3 _ _P ro d u c t s p e c ific a tio n High-voltage optocouplers CNY17G/CNY17GF FEATURES • High current transfer ratio and a

marking code PH 817

Abstract: BYD17 BYD17D BYD17G BYD17J BYD17K BYD17M M3D121 17JPH
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD17 series General purpose controlled avalanche rectifiers Product specification Supersedes data of 1996 Sep 26 1999 Nov 11 Philips Semiconductors Product specification General purpose controlled avalanche rectifiers