PHILIPS DIODE PH 13 Search Results

AV73

Abstract: Js SMD MARKING CODE SOT23 sot23 package marking AV smd DIODE code marking kA SMD IC marking 632 lm 9805
Contextual Info: DISC RETE SE M IC O N D U C TO R S InlEET BAV73 Dual high-speed switching diode in common cathode configuration 1997 May 06 Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors PH ILIPS PHILIPS Philips S e m i c o n d u c t o r s

BAS678

Abstract: BAW62 QDE4331 BAW62 SOT23 MBB111 apx 188
Contextual Info: • Philips Semiconductors N ^ fc.b53T31 AMER 002432b S3T « A P X PH ILIP S /D IS C R FTF L7T - 1\ Product soecificatmn Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It

BUK637-500B

Contextual Info: N APIER PH ILIPS/DISCR ETE bRE D • bbSBTBl 00 3 0 fl 7 D Philips Semiconductors *APX Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode

BUK655-500B

Contextual Info: N AMER PH ILIPS/DISCRETE LTE D • ^53*131 0030680 BBT « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. FREDFET with fast recovery

BAT85

Abstract: BAT85 sot PHILIPS DIODE philips Schottky diode MARKING 12p
Contextual Info: SbE D 711DÛ2b □ 0 M G 2 4 ti DTÖ • PH I N Product specification Philips Semiconductors T-i I -or BAT85 Schottky barrier diode P H I LI P S international DESCRIPTION SbE D QUICK REFERENCE DATA A Schottky barrier diode with an integrated protection ring against

ECG711

Abstract: ecg block diagram tv receiver schematic diagram PHILIPS tv schematic diagram PHILIPS ECG circuit diagram television internal parts block diagram ECG 5 V zener diode ECG 8 V zener diode Philips ECG "voltage divider" 2SC830
Contextual Info: bbsaiafl 00032Ö3 4 ECG711 W IDE-BAND AM PLIFIER/PH ASE DETECTOR WITH ZEN ER DIODE VOLTAGE REGULATOR PHILIPS E C G INC T '"7* 7- 0- 7- O S For AFC A utom atic Frequency Control] Applications 17E D PHASE DETECTOR TRANSFORMER D ESC R IPTIO N The E C G 711 represents a second genera­

DIODE T25 4 EO

Abstract: DIODE T25 4 bo DIODE T25 4 ko diode,FET BUK627-500B DIODE T25-4-bo
Contextual Info: Philips Components Data sheet status P ro d u c t s p e c ific a tio n date of issue March 1991 PH ILIP S N -channel en han cem en t m ode field-effect pow er transistor in a plastic full pack envelope. F R E D F E T with fast recovery reverse diode, particularly suitable

Contextual Info: 41E D PHILIPS INTERNATIONAL 711002b 0030460 S « P H I N T—4 1 -8 5 Philips Semiconductors Product specification W id e body, high iso lation /h igh -gain o p to co u p iers C N W 138/C N W 1 39 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm

Contextual Info: JJL DtE D N AMER PHILIPS/DISCRETE ^ 53=131 0Diifli3 t BTV58 SERIES FAST GATE TURN-OFF THYRISTORS ! Thyristors in TO-220AB envelopes capable of being turned both on and off via the gate. They are suitable for use in high-frequency inverters, power supplies, motor control etc. The devices have no

t4185

Abstract: Optocoupler 601 Philips MBB two leg infrared receiver led BS415 BS6301 BS7002
Contextual Info: PHILIPS 4 1E INTERNATIONAL ]> •1 7110B2b 003046a 5 ■ P H IN T—4 1 -8 5 Philips Semiconductors Product specification W ide body, high isolation/high-gain o pto co up lers C N W 1 38 /C N W 139 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm

Contextual Info: D EVELO PM EN T DATA This data sheet contains advance Information and specifications are subject to change without notice. • ^53=131 0021115 3 ■ 4N46 | I - N AUER P H I L I PS/DISCRETE SSE D T ' f f - & £ T GaAIAs, RESISTOR-DARLINGTON, OPTOCOUPLER

diode 0317

Abstract: diode sv 03 7n ALPS 102 diode BYq28 BYQ28 diode sv 0317 saia double diode parallel C117 diode M1
Contextual Info: N AUER P H I LI PS /D IS CR ETE 2SE D • ^53=131 00223^5 S ■ BYQ28 SERIES Jl T - 0 3 - I7 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forw ard voltage drop, ultra fast reverse recovery times and soft recovery characteristic. They are intended fo r

BUK438-500B

Contextual Info: b^E D N AMER PH ILI PS/ DI SC RE TE • bbS3R31 0D3D4R5 137 H A P X Product Specification Philips Semiconductors BUK438-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: bbS3T31 Philips Semiconductors DD2bfl32 122 B i APX Product specification Low voltage avalanche diode PLVA400A N AUER PHILIPS/DISCRETE FEATUR ES DESCRIPTION • Very low dynamic impedance at low currents: approximately V£o of conventional series The PLVA400A series are silicon

PH 21 DIODE

Abstract: DD40 PLVA400A PLVA450A PLVA453A PLVA456A PLVA459A PLVA462A PLVA465A PLVA468A
Contextual Info: SbE D • T l l Q Ô S b D04 D Û7 1 TET ■ PHIN nmitps Semiconductors Product specification T ~ 0 7 ~ i I Low voltage avalanche diode P H I L I PS I N T E R N A T I O N A L PLVA400A SbE D KN FEATURES DESCRIPTION • Very low dynamic impedance at low currents: approximately 1/6o

BUZ308

Abstract: DG14 mc496
Contextual Info: N AMER PH ILI PS/DIS CRET E OLE D PowerMOS transistor ~ • ^53=131 DOmflGfl A ■ BUZ308 T-31-U ‘ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

diode smd marking code 421

Abstract: marking s4 BBY62 Philips diode 16T MARKING DIODE marking S4 04 marking code LA SMD marking s4 diode smd marking code fj BBY62 "Variable Capacitance Diode"
Contextual Info: b'lE T> N AMER PHILIPS/ DISCRETE m ^33*131 Q02fc.453 223 « A P X Philips Sem iconductors Product specification Double variable capacitance diode DESCRIPTION BBY62 Q UICK REFERENCE DATA The BBY62 is a double variable capacitance diode in a m icrom iniature SO T143 envelope. It

LHi 878

Abstract: LHi 878 application A429 PLVA400A PLVA450A PLVA453A PLVA456A PLVA459A PLVA462A PLVA465A
Contextual Info: bbSBTBl Philips Semiconductors GGEL&3 E 122 M APX Product specification Low voltage avalanche diode N AMER PLVA400A P H IL IP S /D IS C R E T E FEATURES DESCRIPTION • Very low dynamic im pedance at low currents: approxim ately Vfeo of conventional series

C 12 PH Zener diode

Abstract: C 15 PH Zener diode C 12 PH zener L2 SC74 C 13 PH Zener diode
Contextual Info: IP4220CZ6 Dual USB 2.0 integrated ESD protection to IEC 61000-4-2 level 4 Rev. 03 — 12 July 2005 Product data sheet 1. Product profile 1.1 General description The IP4220CZ6 is designed to protect I/O lines sensitive to capacitive load, such as USB 2.0, ethernet, DVI etc. from damage due to ElectroStatic Discharge ESD . It incorporates

IP4220CZ6

Abstract: C 13 PH Zener diode ph-200 diode C 12 PH Zener diode IP4220 IP4220CZ6_4 zener diode capacitance ph 12 c zener diode C 11 PH Zener diode
Contextual Info: IP4220CZ6 Dual USB 2.0 integrated ESD protection to IEC 61000-4-2 level 4 Rev. 04 — 12 September 2005 Product data sheet 1. Product profile 1.1 General description The IP4220CZ6 is designed to protect I/O lines sensitive to capacitive load, such as USB 2.0, ethernet, DVI etc. from damage due to ElectroStatic Discharge ESD . It incorporates

PLVA

Abstract: c 10 ph diode PLVA400A PLVA450A PLVA453A PLVA456A PLVA459A PLVA462A PLVA465A PLVA468A
Contextual Info: Philips Semiconductors Product specification Low voltage avalanche diode PLVA400A FEATURES DESCRIPTION • Very low dynamic Impedance at low currents: approximately Vfco of conventional series The PLVA400A series are silicon planar high performance voltage

BUK452-50A

Abstract: BUK452-50B T0220AB
Contextual Info: N AMER PHI LIP S/ DI SCRETE btS3*131 002DM3Ü 4 2SE D BUK452-50A BUK452-50B PowerMOS transistor T - 37-1/ GENERAL DESCRIPTION N-channel enhancement mode fiefd-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

GD44S

Abstract: BUK471 BUK471-60A BUK471-60B
Contextual Info: PH IL IP S I N T E R N A T I O N A L Data sheet status Preliminary specification date of issue March 1991 SbE ] • 7 1 1 0 fl2 b DGMMS?«! 137 M P H I N BUK471-60A/B PowerMOS transistor Replaces BUK441-60A/B GENERAL DESCRIPTION N-channei enhancement mode

Fast Gate Turn-Off Thyristors

Abstract: BTW58
Contextual Info: 1 AilER PHILIPS/DISCRETE^ ^ ~ O b E J > 53^31 0 0 1 1 % 1 1 BTW 58 SERIES T ' 2 S - l£ T FAST GATE TURN-OFF THYRISTORS Thyristors in TO-220AB envelopes capable o f being turned both on and o ff via the gate. They are suitable fo r use in high-frequency inverters, resonant power supplies, motor control, horizontal