T4185 Search Results

Contextual Info: D EVELO PM EN T DATA This data sheet contains advance Information and specifications are subject to change without notice. • ^53=131 0021115 3 ■ 4N46 | I - N AUER P H I L I PS/DISCRETE SSE D T ' f f - & £ T GaAIAs, RESISTOR-DARLINGTON, OPTOCOUPLER

8 channel optocouplers

Abstract: TIL916 TIL915 optocouplers texas instruments Phototransistor til 81 diode Optocouplers QUAD Phototransistor Optocouplers
Contextual Info: TEXAS INSTR OPTO 35E D Ml a%]i75b GQ7b3M2 ^ • T l l b TIL915, TIL915A, TIL915B DUAL CHANNEL TIL916, TIL916A, TIL916B QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS _ C D3439, MAY 1990 • Choice of Two or Four Channels * Gallium-Arsenide Diode Infrared Source

CNX48

Abstract: transistor 115 25e diode h5e CNX48U SOT-90B 4t85 CNX48 U
Contextual Info: I 1 N AUER PHILIPS/DISCRETE SSE D • bbS3T31 GOSOTÖB 1 ■ CNX48 OPTOCOUPLER Opto-isalator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line DI L envelope. Features

darlington optocoupler cross reference

Abstract: sot229 OPTOCOUPLER dc 4N46 optocoupler LP 250 OPTOCOUPLER dc 1ma optocoupler NPN
Contextual Info: D E V E L O P M E N T DATA • bfaS3*131 o a a i n s _ 3 ■ 11 T h is data sheet contain* advance Inform ation and specifications are subject to change w ith o u t n o tice. 4N46 I I N AMER P H I L I P S / D I S C R E T E

Contextual Info: 41E D PHILIPS INTERNATIONAL 711002b 0030460 S « P H I N T—4 1 -8 5 Philips Semiconductors Product specification W id e body, high iso lation /h igh -gain o p to co u p iers C N W 138/C N W 1 39 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm

LTV4N32

Abstract: X390 357 Photocoupler LTV-4N33 E113898 LTV4N33 CD 4060 internal circuit
Contextual Info: L I T E íI High Transfer Efficiency, General Purpose Type Photocoupler LTV4N32/LTV4N33 . , . 31E D JLITE-ON INC • SS3b3b7 DOOlbb? S ■ILTN ■ FEA TU RES T m - 8 5 1. High current transfer ratio LTV4N32, LTV4N33 CTR:MIN. 500% at lF = 10mA, V cE = fOV

6N140A

Contextual Info: TEXAS INSTR OPTO Wt fl^blTSb GD7b32G T • T i l t 3SE D p i f I 6N140A FO U R -C H A N N EL O PTO C O U PLER /O P TO IS O LATO R i l - D 3622, JA N U A R Y 1991

t4185

Abstract: Optocoupler 601 Philips MBB two leg infrared receiver led BS415 BS6301 BS7002
Contextual Info: PHILIPS 4 1E INTERNATIONAL ]> •1 7110B2b 003046a 5 ■ P H IN T—4 1 -8 5 Philips Semiconductors Product specification W ide body, high isolation/high-gain o pto co up lers C N W 1 38 /C N W 139 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm

CNX48 U

Contextual Info: N AUER PHILIPS/DISCRETE 5SE D bbS3T31 QDa01fl3 1 CNX48 T - V - g f OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line D IL envelope. Features

Contextual Info: DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change w ithout notice, bbS3T31 0020343 7 • | CNG40 N AflER PHILIPS/DISCRETE 2SE D _ GaAIAs, RESISTOR-DARLINGTON, HIGH VOLTAGE OPTOCOUPLER The CNG40 is an optocoupler in a dual-in-line DIL 6-pin plastic SOT231 envelope. It consists o f a

100 N31 transistor

Abstract: OPTOCOUPLER dc CNG40 phototransistor npn
Contextual Info: DEVELOPMENT DATA " T his data sheet contains advance inform ation and specifications are subject to change w ithout notice, bbS3ci3:L 0020343 7 • CNG40 | | _ , N AflER P H I L I P S / I M S C R E T E 2SE D GaAIAs, RESISTOR-DARLINGTON,

PC3Q15

Abstract: PC315
Contextual Info: SHARP ELEK/ MELEC D IV 15E D I GGOiüâSü 5 | Photocouplers PC315 Series PC315 Series Ooaaue*, Mini-Flat Package. High Sensitivity Photocoupler F e a tu re s ì. 2. 3. 4. * High current transfer ratio CTR : MIN. 600% at IF= lm A , V CE=2V Opaque type, mini-flat package