PHILIPS 433-2 NPN Search Results

P10T

Abstract: BFQ236 BFQ236A BFQ256 BFQ256A
Contextual Info: Philips S em iconductors bb53*ì31 DD31723 bflG M A P V NPN 1 GHz video transistors BFQ236; BFQ236A N FEATURES Product specification AUER P H IL IP S /D IS C R E T E b^E PINNING • High breakdown voltages • Low output capacitance PIN 1 • High gain bandwidth product

Contextual Info: N AUER PHILIPS/DISCRETE bRE D • bbS3R31 002fl37b 724 « A P X Philips specification Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic

IC 651

Abstract: BDS645 BD8643 BDS647 Darlington NPN Silicon Diode BDS643 BDS649 BDS651
Contextual Info: 5bE D PHILIPS INTERNATIONAL Philips Components B D S 643/645/647/649/651 Data sheet status Product specification date o f issue April 1991 m 7110ÛEb DQ4314b 17T • PHIN r-33-z^j NPN Silicon Darlington power transistors DESCRIPTION PINNING -SOT223 DESCRIPTION

Contextual Info: Philips Com ponents Datasheet status Product specification date of issue April 1991 BDS643/645/647/649/651 NPN silicon Darlington power transistors PINNING -SOT223 DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in SOT223, intended for general

IC 651

Abstract: BDS643 BDS645 BDS647 BDS649 BDS651
Contextual Info: Philips Com ponents BDS643/645/647/649/651 Data sheet status Product specification date o f issue AprS 1991 NPN silicon Daiiington power transistors PINNING -SO T223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 NPN epitaxial base transistors in a

BDS61A

Abstract: smd npn darlington BDS61 BDS61B Darlington NPN Silicon Diode BDS61C smd diode LC 61 SMD 547 DIODE
Contextual Info: Philip» Comportants Datasheet status Product specification data of issue Apr* 1991 BDS 6 1 /6 1 A /6 1 B /6 1 C NPN Silicon Darlington power transistors DESCRIPTIO N PINNING - SOT223 DESCRIPTIO N base collector emitter collector PIN 1 2 3 4 NPN Silicon power transistors in a

ha 431 transistor

Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2727AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.

lem HA

Abstract: transistor bu2520d BU2520D
Contextual Info: N AMER PHILI PS /D IS CRE TE blE D • LbSBTBl 002fl37b 7SM M A P X Phjljps^Semiconductorg_ Productspe Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic

BUX86

Abstract: UG77A bux87 TO126 BUX87 philips bux86 philips bux87
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUX86; BUX87 High-voltage, high-speed, glass-passivated npn power transistors in T O -126 envelopes, fo r use in con­ verters, inverters, switching regulators, m otor co n tro l systems and switching applications.

transistor w 431

Contextual Info: T Philips Components RZ2731B32W Data sheet status Product specification data of Issue June 1992 NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL SbE D • 711Dfi2b OOHbSbb 3b3 I IPHIN DESCRIPTION AP P LIC A T IO N FEATU R ES • Interdigitated structure; high

Contextual Info: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2730AL GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.

STT 433

Abstract: variable capacitor erie ceramic RX1214B170W Tekelec
Contextual Info: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES RX1214B170W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. • Suitable for short and medium

Contextual Info: P h ilip s S em icon ducto rs P relim inary sp e cifica tio n S ilicon ep itaxial-b ase tran sistors QUICK REFERENCE DATA MIN. CONOTTIONS BD433 PINNING - TO-126 SOT32 DESCRIPTION PARAMETER collector-emitter voltage Veto MAX. UNIT SYMBOL Yces if n DESCRIPTION

2108 npn transistor

Abstract: Dual General Purpose Transistors SC70-6 "Dual npn Transistor" philips 23 BP317 SC70-6 dual NPN Transistor 77 ic marking code sc70
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PUMX1 Dual NPN transistor Preliminary specification File under Discrete Semiconductors, SC04 1995 Dec 07 Philips Semiconductors Preliminary specification Dual NPN transistor PUMX1 FEATURES APPLICATIONS DESCRIPTION • Two transistors in one SC70

Contextual Info: Pjjijip^enijconductor^^^ • bbS3T31 0031233 T1S ■ APX^ProductspecificatiOT NPN 6 GHz wideband transistor ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for application in

transistor tt 2222

Abstract: TT 2222 npn SOT171 multilayer ceramic capacitor heatsink catalogue BLV934 philips 0201 capacitor transistor 257 isolated npn metal
Contextual Info: Philips Semiconductors Product specification UHF power transistor BLV934 FEATURES DESCRIPTION • Internal input matching to achieve high power gain and easy design of wideband circuits NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has

bfg91a

Abstract: transistor kt 801 MBS330 transistor 446-1 1SS TRANSISTOR transistor kt 326 FP 801 transistor SOT103 transistor C 2290
Contextual Info: PhHip^emiconductor^^^ • bbS3T31 0031233 T1S ■ APX^Productspecification NPN 6 GHz wideband transistor — ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emltter plastic SOT 103 envelope. PIN It is designed for application in

BZX85C12V

Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes

B.A date sheet karachi

Abstract: BF547W marking code e2 m1b marking BF547 SCD31
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF547W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors June 1994 Philips Semiconductors Product specification NPN 1 GHz wideband transistor

transistor b 1238

Abstract: BFG91A UBB328 7407 IC and
Contextual Info: PhHip^emiconductor^^^ • bbS3T31 0031233 T1S ■ APX^Productspecification NPN 6 GHz wideband transistor — ^ BFG91A N AHER P H ILIP S /D IS C R E TE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emltter plastic SO T 103 envelope. PIN It is designed for application in

MLC850

Abstract: 2322 157 philips B.A date sheet karachi RF NPN POWER TRANSISTOR 2.5 GHZ BFG11 MLC852 2222 031 capacitor philips 2222 424
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG11; BFG11/X NPN 2 GHz RF power transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors 1995 Apr 07 Philips Semiconductors Product specification

BFG590W

Abstract: 3094 npn
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG590W BFG590W/X; BFG590W/XR NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors August 1995 Philips Semiconductors Product specification BFG590W BFG590W/X; BFG590W/XR

ua 722 fc

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG25AW BFG25AW/X; BFG25AW/XR NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors August 1995 Philips Semiconductors Product specification BFG25AW BFG25AW/X; BFG25AW/XR

BF 212 transistor

Abstract: BFG67W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors September 1994 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR