PHEMT TRANSISTOR MTBF Search Results

MGA-53543

Abstract: RG200D ATF-521P8 BCV62B BCV62C LL1005-FH2N2S ATF-511P8
Contextual Info: Agilent ATF-521P8 900 MHz High Linearity Amplifier Application Note 1374 Introduction Agilent’s ATF-521P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 40 dBm and a 1 dB compression point of 24.4 dBm, the ATF-521P8 is well

12DBL0409

Abstract: 84-1LMI XR1002
Contextual Info: 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler 12DBL0409 March 2005 - Rev 01-Mar-05 Features Chip Device Layout tio n Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 17.0-26.0 GHz GaAs MMIC Power Amplifier 20MPA0289 March 2005 - Rev 01-Mar-05 Features Chip Device Layout tio n Excellent Saturated Output Stage Competitive Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

transistor s11 s12 s21 s22

Contextual Info: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002-BD May 2007 - Rev 02-May-07 Features High Dynamic Range/Postivie Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 24.0 dB Small Signal Gain 4.0 dB Noise Figure at Low Noise Bias

20DBL0451

Abstract: 84-1LMI XR1002 pHEMT transistor MTBF
Contextual Info: 8.0-12.0/16.0-24.0 GHz GaAs MMIC Active Doubler 20DBL0451 April 2005 - Rev 01-Apr-05 Features Chip Device Layout tio n Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +16 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 21.2-23.6 GHz GaAs MMIC Receiver March 2005 - Rev 01-Mar-05 Features Chip Device Layout tio n Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 20.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing

OC 74 germanium transistor

Contextual Info: 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier L1005 September 2005 - Rev 01-Sep-05 Features Chip Device Layout Wideband Low Noise Amplifier 13.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883

B1004

Abstract: 982E-01 842427 on 5295 transistor 49135-1 52521 78304 transistor b1004 XB1004 XP1000
Contextual Info: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004 April 2005 - Rev 01-Apr-05 Features Chip Device Layout High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias

45800

Abstract: 80500 TRANSISTOR DM6030HK TS3332LD XB1006-BD XB1006-BD-000V XB1006-BD-000W 5252 F 1120
Contextual Info: 18.0-38.0 GHz GaAs MMIC Buffer Amplifier B1006-BD February 2008 - Rev 25-Feb-08 Features High Dynamic Range/Positive Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 3.2 dB Noise Figure at Low Noise Bias

Contextual Info: 18.0-38.0 GHz GaAs MMIC Buffer Amplifier B1006-BD August 2007 - Rev 23-Aug-07 Features High Dynamic Range/Positive Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 3.2 dB Noise Figure at Low Noise Bias

78276

Abstract: 78352 92645-1 20870 160455 78138 653-984 1403301 18896 4827017847
Contextual Info: 18.0-38.0 GHz GaAs MMIC Buffer Amplifier B1006-BD June 2007 - Rev 13-Jun-07 Features High Dynamic Range/Positive Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 3.2 dB Noise Figure at Low Noise Bias

MAX 77693

Abstract: 154407 672047 Mimix xb1005 190728 132-16 103-336-15 transistor RF S-parameters 443-958 319-770
Contextual Info: 35.0-45.0 GHz GaAs MMIC Buffer Amplifier B1005-BD March 2007 - Rev 06-Mar-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias +16 dBm P1dB Compression at Power Bias

transistor B1005

Abstract: 74226 014728 17555 672047 pin configuration of 74151 5609 transistor DATASHEET 5609 transistor 87511 74151 pin configuration
Contextual Info: 35.0-45.0 GHz GaAs MMIC Buffer Amplifier B1005 April 2005 - Rev 01-Apr-05 Features Chip Device Layout High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias

014728

Abstract: 30106 38095 47185 62726 74226 DM6030HK TS3332LD XB1005 XB1005-BD-000V
Contextual Info: 35.0-45.0 GHz GaAs MMIC Buffer Amplifier B1005-BD October 2008 - Rev 02-Oct-08 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias +16 dBm P1dB Compression at Power Bias

SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER TRANS

Abstract: huawei microwave Antennas SC1887 thales smd 68 wispry "RF Connector" tyco instruction sheet 411 3255 HUAWEI Base Station SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR HFSO1000-12 scintera application note 104
Contextual Info: JULY2010 ALSO PUBLISHED ONLINE: www.highfrequencyelectronics.com FEATURED PRODUCTS: MATERIALS,R&D SUPPORT, OSCILLATORS & SYNTHESIZERS INSIDE THIS ISSUE: Short-Range Transceiver Performance Circularly-Polarized Microwave Feed Fastest-Settling Type 2 PLL Design