PHEMT FET MARKING L Search Results

F31Z

Abstract: SPF-3143Z SPF3143Z SPF-3143 pHEMT FET marking A spf3143
Contextual Info: SPF-3143Z SPF-3143Z Low Noise pHEMT GaAs FET LOW NOISE pHEMT GaAs FET NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: SOT-343 Product Description Features SiGe BiCMOS Si BiCMOS SiGe HBT 9 GaAs pHEMT Si CMOS Si BJT GaN HEMT „ 0.58dB NFMIN at 2GHz

MMIC SOT 343 marking CODE

Abstract: MGA-52543-BLKG MGA-52543-TR1G class d amplifier circuit A004R MGA-52543 MGA-52543-TR2G a1 lna SOT343 lna mmic amplifier marking code 425
Contextual Info: Products > RF ICs/Discretes > RF ICs > GaAs Amplifiers, Mixers, Switches > MGA-52543 MGA-52543 5V LNA, 32dBm OIP3, 0.4-6GHz, SOT343 SC-70 Description Lifecycle status: Active Features The MGA-52543 is an easy-to-use 5V high linearity low noise amplifier built on Avago's

zo 607 MA

Abstract: 4948 CFH400 pHEMT FET marking A
Contextual Info: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

01248

Contextual Info: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

sot43

Contextual Info: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

ZO 607 MA

Abstract: 4948 ta 6203 CFH400 Q62702-G0116
Contextual Info: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

P3F filtronic

Abstract: pHEMT FET marking A FPD10000AF MIL-HDBK-263 PHEMT marking code a PHEMT marking code B
Contextual Info: PRELIMINARY FPD10000AF 10W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency

PHEMT marking code a

Abstract: FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A
Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

transistor SMD P2F

Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE
Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

transistor SMD P2F

Abstract: smd p2f transistor atc600s FPD4000AF PHEMT marking code a smd marking code j6 smd p2f pHEMT FET marking A transistor STD P2F smd code marking C8
Contextual Info: FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

transistor SMD P2F

Abstract: atc600s smd p2f transistor smd marking code j6 PHEMT marking code a atc600 smd p2f FPD4000AF MIL-HDBK-263 Filtronic Components
Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

AS211-334

Contextual Info: DATA SHEET AS211-334: PHEMT GaAs IC SPDT Switch LF–4 GHz Applications ● Pin Out Top View General-purpose switch for telecommunication applications J3 1 6 2 5 3 4 V2 CBL Features P1 dB 30 dBm typical @ 3 V IP3 43 dBm typical @ 3 V ● Low insertion loss (0.3 dB @ 0.9 GHz)

microstripline FR4

Abstract: ATF331M4 ATF-331M4 ATF-36163 LL1608-FH15NK LL1608-FH3N3S LL1608-FH5N6S 5988-5905EN ATF-33
Contextual Info: A Low Noise High Intercept Point Amplifier for 1850 to 1910 MHz PCS Applications using the ATF-331M4 Depletion Mode PHEMT Application Note 1288 Introduction The small size and leadless feature offers the designer the ability to reduce circuit board layout size significantly. The top and bottom views of the M4 package are

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

S277

Abstract: QFN-20 SKY13277-355LF Marking s277 GND214
Contextual Info: DATA SHEET SKY13277-355LF: GaAs SP3T Absorptive Switch 500 MHz–2.5 GHz Features Functional Diagram Positive voltage control 0/3 V typ. ● High isolation 62 dB at 1 GHz ● Integrated silicon CMOS driver ● Isolated ports are absorptive ● Available lead (Pb)-free and RoHS-compliant MSL-1 @ 260°C

gaas fet marking

Contextual Info: In fineon •i c h r t l o g ifci CMH192 GaAs MMIC Target Data Sheet • High-Linearity, PCS LNA/Mixer 1C for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process • Leadless 3.5 x 3.5 mm. SMT package • LO - Input power range: - 7.0 to 0 dBm

srf 3417

Abstract: transistor srf 3417 SKY77329 transistor tt 2170 em digrf SKY77519 MARKING CODE EA1 SKY77408 sky72302-21 sky77506
Contextual Info: Product Selection Guide Spring 2007 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog and mixed signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and direct conversion radios are at the heart of many of today’s leading-edge

47146

Abstract: 41146
Contextual Info: CFH800 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

transmitter microwave

Abstract: marking 1GL marking code IAM transistor MARKING IAM A004R IAM-92516 IAM-92516-BLK IAM-92516-TR1 IAM-92516-TR2 MO229
Contextual Info: Agilent IAM-92516 High Linearity GaAs FET Mixer Data Sheet Features DC = 5V @ 26 mA Typ. RF = 1.91 GHz, PinRF = -10 dBm; LO = 1.7 GHz, PinLO = -3 dBm; IF = 210 MHz unlesss otherwise specified • Lead-free Option Available Description Agilent Technologies’s IAM-92516

Contextual Info: Agilent IAM-92516 High Linearity GaAs FET Mixer Data Sheet Features DC = 5V @ 26 mA Typ. RF = 1.91 GHz, PinRF = -10 dBm; LO = 1.7 GHz, PinLO = -3 dBm; IF = 210 MHz unlesss otherwise specified • High Linearity: 27 dBm IIP3 Description Agilent Technologies’s IAM-92516

M3X marking

Contextual Info: IAM-92516 High Linearity GaAs FET Mixer Data Sheet Description Features Avago Technologies’s IAM-92516 is a high linearity GaAs FET Mixer using 0.5 m enhancement mode pHEMT technology. This device houses in Pb-free and Halogen free 16 pins LPCC 3x3[2] plastic package. The IAM-92516

MRF high power transistor

Abstract: transmitter microwave electronic transformer halogen mmds down converter "Up/Down Converter" amplifier marking code a FET GAAS marking a PHEMT marking code a gaas fet marking a gaas Low Noise Amplifier
Contextual Info: IAM-92516 High Linearity GaAs FET Mixer Data Sheet Description Avago Technologies’s IAM-92516 is a high linearity GaAs FET Mixer using 0.5 µm enhancement mode pHEMT technology. This device houses in Pb-free and Halogen free 16 pins LPCC 3x3[2] plastic package. The IAM-92516 has

47146

Contextual Info: CFH800 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

47146

Abstract: SOT43 402 5921
Contextual Info: CFH800 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and