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    PHB6 Search Results

    PHB6 Datasheets (24)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PHB60N06LT
    		Philips Semiconductors TrenchMOS Transistor Logic Level FET Original PDF 56.35KB 9
    PHB60N06LTT3
    		Philips Semiconductors TrenchMOS transistor Logic level FET Original PDF 56.34KB 9
    PHB60N06T
    		Philips Semiconductors TrenchMOS transistor Standard level FET Original PDF 53.54KB 8
    PHB60N06TT3
    		Philips Semiconductors TrenchMOS transistor Standard level FET Original PDF 53.56KB 8
    PHB63NQ03LT
    		Philips Semiconductors Logic Level FET Original PDF 93.49KB 14
    PHB64N03LT
    		Philips Semiconductors Logic Level FET Original PDF 81.71KB 12
    PHB65N06LT
    		Philips Semiconductors TrenchMOS transistor Logic level FET Original PDF 71.06KB 8
    PHB65N06LT
    		Philips Semiconductors TrenchMOS Transistor Logic Level FET Original PDF 56.55KB 9
    PHB65N06LTT3
    		Philips Semiconductors TrenchMOS transistor Standard level FET Original PDF 54.16KB 8
    PHB65N06T
    		Philips Semiconductors TrenchMOS Transistor Standard Level FET Original PDF 53.49KB 8
    PHB65N06TT3
    		Philips Semiconductors TrenchMOS transistor Standard level FET Original PDF 53.49KB 8
    PHB66NQ03LT
    		NXP Semiconductors PHB66NQ03LT - N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 66 A; Qgd (typ): 3.6 nC; RDS(on): 10.5@10V13.6@5V mOhm; VDSmax: 25 V Original PDF 182.51KB 13
    PHB66NQ03LT
    		Philips Semiconductors N-channel TrenchMOS transistor Original PDF 114.89KB 14
    PHB66NQ03LT
    		Philips Semiconductors Logic Level FET Original PDF 98.09KB 14
    PHB66NQ03LT118
    		NXP Semiconductors NOW NEXPERIA PHB66NQ03LT 66A, 25 Original PDF 699.88KB
    PHB66NQ03LT,118
    		NXP Semiconductors N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 66 A; Qgd (typ): 3.6 nC; RDS(on): 10.5@10V13.6@5V mOhm; VDSmax: 25 V; Package: SOT404 (D2PAK); Container: Tape reel smd Original PDF 182.65KB 13
    PHB66NQ03LT/T3
    		NXP Semiconductors N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 66 A; Qgd (typ): 3.6 nC; RDS(on): 10.5@10V13.6@5V mOhm; VDSmax: 25 V Original PDF 82.84KB 13
    PHB69N03LT
    		Philips Semiconductors N-Channel TrenchMOS Transistor Logic Level FET Original PDF 109.41KB 11
    PHB69N03LTT3
    		Philips Semiconductors N-channel TrenchMOS transistor Logic level FET Original PDF 109.4KB 11
    PHB69N03T
    		Philips Semiconductors TrenchMOS Transistor Standard Level FET Original PDF 51.21KB 8
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    PHB6 Price and Stock

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    Cornell Dubilier Electronics Inc 156PHB600K4R

    CAP FILM 15UF 10% 600VDC RADIAL
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    DigiKey 156PHB600K4R Bulk 87 1
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    Mouser Electronics 156PHB600K4R
    • 1 $32.30
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    Omega Engineering PHB-600R

    PH/MV/TEMP BENCHTOP METER WITH R
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    DigiKey PHB-600R Bulk 1
    • 1 $973.66
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    Avnet Americas PHB-600R Bulk 5
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    Newark PHB-600R Bulk 4 1
    • 1 $973.65
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    Cornell Dubilier Electronics Inc 225PHB600K2H

    CAP FILM 2.2UF 10% 600VDC RADIAL
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    DigiKey 225PHB600K2H Bulk 3,060
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    Cornell Dubilier Electronics Inc 105PHB600K2H

    CAP FILM 1UF 10% 600VDC RADIAL
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    DigiKey 105PHB600K2H Bulk 4,347
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    Newark 105PHB600K2H Bulk 4,347
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    Sumida Corporation UU9LFHNP-HB682

    CMC 6.8MH 250MA 2LN TH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UU9LFHNP-HB682 Bulk 300
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    Avnet Americas UU9LFHNP-HB682 Reel 100
    • 1 -
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    • 1000 $0.67
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    Mouser Electronics UU9LFHNP-HB682
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    Find more PHB6 price and stock on Findchips.com

    PHB6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PHB66NQ03LT

    Abstract: PHD66NQ03LT
    Contextual Info: PHB66NQ03LT N-channel TrenchMOS logic level FET Rev. 07 — 30 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PHB66NQ03LT PHB66NQ03LT PHD66NQ03LT PDF

    PHB60N06LT

    Abstract: PHP60N06LT
    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP60N06LT, PHB60N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PHP60N06LT, PHB60N06LT PHP60N06LT PHB60N06LT PDF

    FREDFET

    Abstract: PHB6ND50E PHP3N60 PHP4N50 PHP6ND50E Power FREDFET Transistor
    Contextual Info: Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated FEATURES PHP6ND50E, PHB6ND50E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PHP6ND50E, PHB6ND50E FREDFET PHB6ND50E PHP3N60 PHP4N50 PHP6ND50E Power FREDFET Transistor PDF

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP6N60E, PHB6N60E Avalanche energy FEATURES • • • • • QUICK REFERENCE DATA SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics


    OCR Scan     		PHP6N60E, PHB6N60E PHP6N60E T0220AB) PDF

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP6N50E, PHB6N50E SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance


    OCR Scan     		PHP6N50E, PHB6N50E PHP6N50E T0220AB) PHB6N50E PDF

    Contextual Info: Philips Semiconductors Product specification PHP69N03LT, PHB69N03LT, PHD69N03LT TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • • • QUICK REFERENCE DATA VDSS = 25 V ’Trench’ technology Very low on-state resistance Fast switching


    OCR Scan     		PHP69N03LT, PHB69N03LT, PHD69N03LT PHP69N0y PDF

    6N60E

    Abstract: ti N60 SD 10 N60
    Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP6N60E, PHB6N60E SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance


    OCR Scan     		PHP6N60E, PHB6N60E PHP6N60E T0220AB) PHB6N60E 6N60E ti N60 SD 10 N60 PDF

    PHB65N06LT

    Abstract: PHP65N06LT
    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP65N06LT, PHB65N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PHP65N06LT, PHB65N06LT PHP65N06LT PHB65N06LT PDF

    PHB69N03LT

    Abstract: PHD69N03LT PHP69N03LT
    Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP69N03LT, PHB69N03LT PHD69N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible


    Original     		PHP69N03LT, PHB69N03LT PHD69N03LT PHP69N03LT O220AB) PHB69N03LT PHD69N03LT PDF

    PHB65N06LT

    Abstract: PHP65N06LT T0220AB logic level fet
    Contextual Info: Product specification Philips Semiconductors TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • • • PHP65N06LT, PHB65N06LT QUICK REFERENCE DATA VDSS = 55 V ’Trench’ technology Very low on-state resistance Fast switching Stable off-state characteristics


    OCR Scan     		PHP65N06LT, PHB65N06LT PHP65N06LT T0220AB) T0220) PHB65N06LT T0220AB logic level fet PDF

    PHP6N50E

    Abstract: PHB6N50E PHP3N60 PHP4N50 USON-10
    Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP6N50E, PHB6N50E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original     		PHP6N50E, PHB6N50E PHP6N50E O220AB) PHB6N50E PHP3N60 PHP4N50 USON-10 PDF

    PHB6N60E

    Abstract: PHP3N60 PHP6N60E
    Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP6N60E, PHB6N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original     		PHP6N60E, PHB6N60E PHP6N60E O220AB) PHB6N60E PHP3N60 PDF

    PHP69N03LT

    Abstract: PHB69N03LT PHD69N03LT
    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP69N03LT, PHB69N03LT, PHD69N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PHP69N03LT, PHB69N03LT, PHD69N03LT PHP69N03LT PHB69N03LT PHD69N03LT PDF

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy rated_ FEATURES • • • • • • QUICK REFERENCE DATA SYMBOL VDSS = 500 V Repetitive Avalanche Rated


    OCR Scan     		PHP6ND50E, PHB6ND50E PDF

    Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP69N03LT, PHB69N03LT PHD69N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible


    Original     		PHP69N03LT, PHB69N03LT PHD69N03LT PHP69N03LT O220AB) PHD69N03LT PDF

    s1g 28 diode

    Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Logic level FET FEATURES PHP60N06LT, PHB60N06LT SYMBOL • ’Tr enc h’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics


    OCR Scan     		PHP60N06LT, PHB60N06LT T0220AB) s1g 28 diode PDF

    IX 1646

    Abstract: 2.t transistor
    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • • • PHP69N03LT, PHB69N03LT, PHD69N03LT QUICK REFERENCE DATA VDSS = 25 V ’Trench’ technology Very low on-state resistance Fast switching


    OCR Scan     		PHP69N03LT, PHB69N03LT, PHD69N03LT PHP69N03tage. IX 1646 2.t transistor PDF

    Contextual Info: Philips Semiconductors Product specification PowerMÒS transistors PHP6N50E, PHB6N50E Avalanche energy rated_ FEATURES • • • • • SYMBOL QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics


    OCR Scan     		PHP6N50E, PHB6N50E PHP6N50E T0220AB) OT404 PHB6N50E PDF

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP6N60E, PHB6N60E SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance


    OCR Scan     		PHP6N60E, PHB6N60E PHP6N60E T0220AB) PDF

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • • • PHP60N06LT, PHB60N06LT ’Trench’ technology Very low on-state resistance Fast switching Stable off-state characteristics High thermal cycling performance


    OCR Scan     		PHP60N06LT, PHB60N06LT PHP60N06LT 1E-01 1E-02 1E-03 1E-04 1E-05 1E-05 PDF

    PHB6N60E

    Abstract: PHP3N60 PHP6N60E
    Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP6N60E, PHB6N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original     		PHP6N60E, PHB6N60E PHP6N60E O220AB) PHB6N60E PHP3N60 PDF

    PHB64N03LT

    Contextual Info: PHB64N03LT TrenchMOS logic level FET Rev. 01 — 27 August 2002 Product data M3D166 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHB64N03LT in a SOT404 D2-PAK .


    Original     		PHB64N03LT M3D166 PHB64N03LT OT404 OT404 MBB076 PDF

    Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r e l i m i n a r y speci f i cat i on T r e n c h M O S transistor Logic level FET PHP69N03LT, PHB69N03LT, PHD69N03LT SY M B O L F E A TU R ES QUICK RE FE R E N C E DATA Vdss = 25 V • ’Trench’ technology


    OCR Scan     		PHP69N03LT, PHB69N03LT, PHD69N03LT PDF

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP69N03LT, PHB69N03LT, PHD69N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance


    Original     		PHP69N03LT, PHB69N03LT, PHD69N03LT PHP69N03LT PDF