PH-13 DIODE Search Results

167D

Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
Contextual Info: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100

Contextual Info: N AMER PH ILI PS/ DI SCR ETE 5 SE D E V tLU P M LN I UAI A J> M bbS 3 T 31 00534=13 5 • BYT230PIV200-400 This data sheet contains advance information and specifications are subject to change w ithout notice. /

D1407

Abstract: BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406
Contextual Info: BUZ54 PowerMOS transistor N AMER PH IL IP S/ DISCR ET E — QbE D — — • ^53=131 D014717 5 7 31-13 ~ — - July 1987 QUICK REFERENCE DATA PARAMETER sym bo l Drain-source voltage VDS Drain current d.c. Id Total power dissipation Ptot Drain-source on-state resistance

TB200

Abstract: amidon BN-61-202 c12 ph zener diode
Contextual Info: February 1, 2012 TB200 Frequency=20-1000MHz Pout=60W Gain=10dB Vds=28.0Vdc Idq=1.0A LB401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 20 100 18 90 15 80 13 70 10 60 8 50 5 40 3 30 20 1000 100 200

D419

Contextual Info: aixYS DSS10-0045B Power Schottky Rectifier ^fa v V r RM VF 10 A 45 V 0.40 V Preliminary Data v* R S H V 45 45 U *7 TyPe V n*M V DSS 10-0045B A”" I C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions Maximum Ratings 35 10 A A 160 A lAS= 13 A; L = 180 pH; TVJ = 25°C; non repetitive

TRANSISTOR BD 338

Abstract: Philips 336 transistor 338 BD 338 N 1507-50A BD335 BD331
Contextual Info: BD332; 334 BD336; 338 PH I L I P S INTERNATIONAL SbE J> I 7 1 1 0 0 2 b 0 0 4 2 0 =^ lfl4 I H P H I N SILICON DARLINGTON POWER TRANSISTORS T'13-3i P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; plastic SO T-82 envelope for clip mounting; can also be soldered

C 11 PH Zener diode

Contextual Info: Data Sheet No. PD60182-I IR2156 S & (PbF) BALLAST CONTROL IC Features • • • • • • • Programmable dead time • DC bus under-voltage reset • Shutdown pin with hysteresis • Internal 15.6V zener clamp diode on Vcc • Micropower startup (150µA)

C5V6 ph

Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Contextual Info: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

ph-30 diode

Abstract: Sharp Semiconductor Lasers photodiode dvd cd laser diode for rw drive Laser Diode for cd rw Laser Diode Frame Type GH6C005B3 RED laser diode operating Temperature GH06510B2A GH17805B2AS GH6D407B5A
Contextual Info: E094_098.fm 94 ページ ２００１年９月２３日 日曜日 午後１時３２分 LASER LASER DIODE ✩New product ★Under development • LASER DIODES Wavelength nm Model No. (Tc = 25°C) Optical power output (mW) MAX. CW Pulse GH06507B2A GH06507B2B

Chiller

Abstract: 532 nm laser diode Nd-yag NL220 invisible TEM00 c 10 ph diode diode marking 355 Tokyo Instruments
Contextual Info: S E R I E S HIGH ENERGY Diode Pumped Q-switched Nd:YAG Lasers FEATURES m 10 mJ at 1064 nm m 1 kHz repetition rate m High pulse energy stability m TEM00 shape beam m PIV version is available m Simple and robust all solid Diode pumped NL220 series lasers development as well as industrial

buk444

Abstract: BUK454-500B Diodes REPLACEMENT BUK9575 BUK7528-55 BUK102-50GS BUK444-500B BUK455 600B BUK457-500B BUK457-600B
Contextual Info: Philips Semiconductors Power Diodes Replacement list REPLACED/WITHDRAWN TYPES The following type numbers were included in the previous issue of this data handbook, but are not in the current edition. TYPE NUMBER REASON FOR DELETION BUK100-50GS Discontinued

C 12 PH Zener diode

Abstract: C 15 PH Zener diode C 13 PH Zener diode ph 41 zener diode C 12 PH zener Zener PH 200 ph 18 c zener diode ph Series Zener PH 36 Zener ph 12 c zener diode
Contextual Info: S OD 5 2 3 S OD 3 2 3 S OD 12 3 DO 2 19 A B S M F S OT 2 3 DO 2 14 ( S MA ) M i c r o MEL F Q u a d r o MEL F S OD 8 0 M i n i MEL F S OD 8 0 MEL F DO 2 13 DO 3 5 DO 41 w w w. v i s h a y. c o m Selector Guide SMALL SIGNAL ZENER DIODES S MALL S I G NAL DIODE S

philips ET-E 60

Contextual Info: E5E T> m bb53*131 OOaaa1^ fi BY229 SERIES N AMER PHILIPS/DISCRETE 7 = 0 3 -/ 7 FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. They are intended fo r use in chopper applications as well as in

Contextual Info: Data Sheet No. PD60198 revF IR2166 S & (PbF) PFC & BALLAST CONTROL IC Features • Programmable dead time • Internal ignition ramp • Internal fault counter • DC bus under-voltage reset • Shutdown pin with hysteresis • Internal 15.6V zener clamp diode on Vcc

PFC BALLAST CONTROL IC

Abstract: IR2166 12v ballast ic ELECTRONIC BALLAST 12v diode 824 C 12 PH zener diode datasheet circuit diagram ballast 12v PD60198 MS-012AC 1N4148
Contextual Info: Data Sheet No. PD60198 revE IR2166 S & (PbF) PFC & BALLAST CONTROL IC Features • Programmable dead time • Internal ignition ramp • Internal fault counter • DC bus under-voltage reset • Shutdown pin with hysteresis • Internal 15.6V zener clamp diode on Vcc

PD60198

Abstract: zener diode zx 47 PD6019
Contextual Info: Data Sheet No. PD60198 revF IR2166 S & (PbF) PFC & BALLAST CONTROL IC Features • Programmable dead time • Internal ignition ramp • Internal fault counter • DC bus under-voltage reset • Shutdown pin with hysteresis • Internal 15.6V zener clamp diode on Vcc

CD 51 rf detector

Abstract: CHE1260
Contextual Info: CHE1260 RoHS COMPLIANT 10-27GHz Bidirectionnal Detector GaAs Monolithic Microwave IC Description The CHE1260 is a bidirectionnal detector that integrates a passive bidirectionnal coupler, two matched detection diodes and two reference diodes. Vref_R DC_R It allows the measurement of transmitted and

CHE1260

Abstract: Microwave detector diodes 18 GHz
Contextual Info: CHE1260 RoHS COMPLIANT 10-27GHz Bidirectionnal Detector GaAs Monolithic Microwave IC Description The CHE1260 is a bidirectionnal detector that integrates a passive bidirectionnal coupler, two matched detection diodes and two reference diodes. Vref_R DC_R It allows the measurement of transmitted

CHE1260

Contextual Info: CHE1260 RoHS COMPLIANT 10-27GHz Bidirectionnal Detector GaAs Monolithic Microwave IC Description The CHE1260 is a bidirectionnal detector that integrates a passive bidirectionnal coupler, two matched detection diodes and two reference diodes. Vref_R DC_R It allows the measurement of transmitted and

byv26c ph

Abstract: philips diode PH 15
Contextual Info: N AUER PHILIPS/DISCRETE 1,^53131 QDS7Q2b SbT • APX b^E » Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse

MMAD1108

Contextual Info: MMAD1108 e3 Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-Pin SOIC package for use as steering diodes protecting

MAD1106

Contextual Info: MAD1106 Switching Diode Array P R O D U C T I O N These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14PIN package for use in fast switching core-driver applications. This includes computers and