PH-13 DIODE Search Results

167D

Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
Contextual Info: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100

Contextual Info: N AMER PH ILI PS/ DI SCR ETE 5 SE D E V tLU P M LN I UAI A J> M bbS 3 T 31 00534=13 5 • BYT230PIV200-400 This data sheet contains advance information and specifications are subject to change w ithout notice. /

D1407

Abstract: BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406
Contextual Info: BUZ54 PowerMOS transistor N AMER PH IL IP S/ DISCR ET E — QbE D — — • ^53=131 D014717 5 7 31-13 ~ — - July 1987 QUICK REFERENCE DATA PARAMETER sym bo l Drain-source voltage VDS Drain current d.c. Id Total power dissipation Ptot Drain-source on-state resistance

TB200

Abstract: amidon BN-61-202 c12 ph zener diode
Contextual Info: February 1, 2012 TB200 Frequency=20-1000MHz Pout=60W Gain=10dB Vds=28.0Vdc Idq=1.0A LB401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 20 100 18 90 15 80 13 70 10 60 8 50 5 40 3 30 20 1000 100 200

TRANSISTOR BD 338

Abstract: Philips 336 transistor 338 BD 338 N 1507-50A BD335 BD331
Contextual Info: BD332; 334 BD336; 338 PH I L I P S INTERNATIONAL SbE J> I 7 1 1 0 0 2 b 0 0 4 2 0 =^ lfl4 I H P H I N SILICON DARLINGTON POWER TRANSISTORS T'13-3i P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; plastic SO T-82 envelope for clip mounting; can also be soldered

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

ph-30 diode

Abstract: Sharp Semiconductor Lasers photodiode dvd cd laser diode for rw drive Laser Diode for cd rw Laser Diode Frame Type GH6C005B3 RED laser diode operating Temperature GH06510B2A GH17805B2AS GH6D407B5A
Contextual Info: E094_098.fm 94 ページ ２００１年９月２３日 日曜日 午後１時３２分 LASER LASER DIODE ✩New product ★Under development • LASER DIODES Wavelength nm Model No. (Tc = 25°C) Optical power output (mW) MAX. CW Pulse GH06507B2A GH06507B2B

Chiller

Abstract: 532 nm laser diode Nd-yag NL220 invisible TEM00 c 10 ph diode diode marking 355 Tokyo Instruments
Contextual Info: S E R I E S HIGH ENERGY Diode Pumped Q-switched Nd:YAG Lasers FEATURES m 10 mJ at 1064 nm m 1 kHz repetition rate m High pulse energy stability m TEM00 shape beam m PIV version is available m Simple and robust all solid Diode pumped NL220 series lasers development as well as industrial

C 12 PH Zener diode

Abstract: C 15 PH Zener diode C 13 PH Zener diode ph 41 zener diode C 12 PH zener Zener PH 200 ph 18 c zener diode ph Series Zener PH 36 Zener ph 12 c zener diode
Contextual Info: S OD 5 2 3 S OD 3 2 3 S OD 12 3 DO 2 19 A B S M F S OT 2 3 DO 2 14 ( S MA ) M i c r o MEL F Q u a d r o MEL F S OD 8 0 M i n i MEL F S OD 8 0 MEL F DO 2 13 DO 3 5 DO 41 w w w. v i s h a y. c o m Selector Guide SMALL SIGNAL ZENER DIODES S MALL S I G NAL DIODE S

IRS2156

Abstract: IR2156 application IR2156SPBF ir2156s IR2156 IR2156PBF programmable ignition timing IRS21 SOICN-14
Contextual Info: IR2156 S PbF BALLAST CONTROL IC Features Programmable dead time DC bus under-voltage reset Shutdown pin with hysteresis Internal 15.6V zener clamp diode on Vcc Micropower startup (150 µA) Latch immunity and ESD protection Ballast control and half bridge driver in one IC

philips ET-E 60

Contextual Info: E5E T> m bb53*131 OOaaa1^ fi BY229 SERIES N AMER PHILIPS/DISCRETE 7 = 0 3 -/ 7 FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. They are intended fo r use in chopper applications as well as in

PFC BALLAST CONTROL IC

Abstract: IR2166 12v ballast ic ELECTRONIC BALLAST 12v diode 824 C 12 PH zener diode datasheet circuit diagram ballast 12v PD60198 MS-012AC 1N4148
Contextual Info: Data Sheet No. PD60198 revE IR2166 S & (PbF) PFC & BALLAST CONTROL IC Features • Programmable dead time • Internal ignition ramp • Internal fault counter • DC bus under-voltage reset • Shutdown pin with hysteresis • Internal 15.6V zener clamp diode on Vcc

CHE1260

Abstract: Microwave detector diodes 18 GHz
Contextual Info: CHE1260 RoHS COMPLIANT 10-27GHz Bidirectionnal Detector GaAs Monolithic Microwave IC Description The CHE1260 is a bidirectionnal detector that integrates a passive bidirectionnal coupler, two matched detection diodes and two reference diodes. Vref_R DC_R It allows the measurement of transmitted

byv26c ph

Abstract: philips diode PH 15
Contextual Info: N AUER PHILIPS/DISCRETE 1,^53131 QDS7Q2b SbT • APX b^E » Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse

5965-8882E

Abstract: POWER12 diode ph-150
Contextual Info: That müHÆHEWLETT PACKARD Hermetic PIN Diodes for Stripline/Microstrip Switches/ Attenuators Technical Data Features • Broadband Operation HF through X-Band • Low Insertion Loss Less than 0.5 dB to 10 GHz 5082-3140 • High Isolation Greater than 20 dB to 10 GHz

BYW97G PH

Contextual Info: N AUER PHIL IPS /DI SCRE TE b b 5 3 c!31 0Q270bD 727 * A P X b^E D Philips Semiconductors Preliminary specification Fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics BYW97F; BYW97G QUICK REFERENCE DATA

Contextual Info: BAS19 BAS20 BAS21 tbS3^31 002M270 7bb • APX N A HER PHILIPS/DISCRETE b7E ]> y v SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon epitaxial high-speed diodes in a microminiature plastic envelope. They are intended for switching and general purposes. QUICK REFERENCE DATA

philips diode PH 37m

Abstract: K1388 10KW 1N5817 AN42 AP-523 RC5040 RC5042 RC5043 sanyo timing controller
Contextual Info: www.fairchildsemi.com Application Note 42 Implementing the RC5040 and RC5042 DC-DC Converters on Pentium Pro Motherboards Introduction This document describes how to implement a switching voltage regulator using an RC5040 or an RC5042 high speed controller, a power inductor, a Schottky diode, appropriate

BV 480

Abstract: SOIC-14
Contextual Info: Semiconductor, Inc. EiMD05C8 thru EiMD24C8 Compact, Bidirectional, Eight Line Monolithic TVS Diode Network FEATURES • • • • • • • Protects eight I/O lines Monolithic IC for higher reliability at lower cost Manufactured using Proprietary technology

Contextual Info: Data Sheet No. PD60292 IRS2166D S PbF PFC + BALLAST CONTROL IC Features End-of-life window comparator pin Internal up/down current-sense fault counter DC bus undervoltage reset Lamp removal/auto-restart shutdown pin Internal bootstrap MOSFET Internal 15.6 V zener clamp diode on VCC

TVS RS422

Abstract: tvs-diode SOIC-14 TVS RS232
Contextual Info: Semiconductor, Inc. EiMD05C8 thru EiMD24C8 Compact, Bidirectional, Eight Line Monolithic TVS Diode Network FEATURES • • • • • • • Protects eight I/O lines Monolithic IC for higher reliability at lower cost Manufactured using Proprietary technology

BUK655-500B

Abstract: T0220AB
Contextual Info: P H ILIPS bSE D INTER NAT ION AL ES 7 1 1 0 6 2 b D0bH31b TTö • PHIN Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET G EN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.

C2E1

Abstract: transistor QCA75A60 QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 94MAX
Contextual Info: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 （M） QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max

SMBJxxA

Abstract: DO220A TVS diode MELF 275 SMA SMB diode guide SM6A27 DO-218AB vcut03b1-dd1 SACXX VBUS05L1 47 2L axial diode DO-219AB
Contextual Info: V i s h ay In t e r t e c h n o l o g y, In c . Diodes - Protect Against Transient Voltage Surge and ESD I INNOVAT AND TEC O L OGY T VS and ESD Protection N HN DIODES O 19 62-2012 Diodes for TVS and ESD Protection Featured Products Tr a n s Z o r b A v a l a n c h e Tr a n s i e n t Vo l t a g e S u p p r e s s o r s