PH-13 DIODE Search Results

167D

Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
Contextual Info: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100

Contextual Info: N AMER PH ILI PS/ DI SCR ETE 5 SE D E V tLU P M LN I UAI A J> M bbS 3 T 31 00534=13 5 • BYT230PIV200-400 This data sheet contains advance information and specifications are subject to change w ithout notice. /

D1407

Abstract: BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406
Contextual Info: BUZ54 PowerMOS transistor N AMER PH IL IP S/ DISCR ET E — QbE D — — • ^53=131 D014717 5 7 31-13 ~ — - July 1987 QUICK REFERENCE DATA PARAMETER sym bo l Drain-source voltage VDS Drain current d.c. Id Total power dissipation Ptot Drain-source on-state resistance

TB200

Abstract: amidon BN-61-202 c12 ph zener diode
Contextual Info: February 1, 2012 TB200 Frequency=20-1000MHz Pout=60W Gain=10dB Vds=28.0Vdc Idq=1.0A LB401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 20 100 18 90 15 80 13 70 10 60 8 50 5 40 3 30 20 1000 100 200

701T1

Abstract: 301t1
Contextual Info: 04/21/98 13:20 From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 To Lynn Murphy 8 f l ^ i T C ^ R O L A 02107 rutlni |.ill i l . r i n m i l SEMICONDUCTOR TECHNICAL DATA M M SD 101T1 M M SD 301T1 M M SD 701T1 SO D-123 Schottky Barrier Diodes The MMSD101T1, MMSD301T1, and MMSD701T1 devices are spin-offs of our

D419

Contextual Info: aixYS DSS10-0045B Power Schottky Rectifier ^fa v V r RM VF 10 A 45 V 0.40 V Preliminary Data v* R S H V 45 45 U *7 TyPe V n*M V DSS 10-0045B A”" I C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions Maximum Ratings 35 10 A A 160 A lAS= 13 A; L = 180 pH; TVJ = 25°C; non repetitive

TRANSISTOR BD 338

Abstract: Philips 336 transistor 338 BD 338 N 1507-50A BD335 BD331
Contextual Info: BD332; 334 BD336; 338 PH I L I P S INTERNATIONAL SbE J> I 7 1 1 0 0 2 b 0 0 4 2 0 =^ lfl4 I H P H I N SILICON DARLINGTON POWER TRANSISTORS T'13-3i P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; plastic SO T-82 envelope for clip mounting; can also be soldered

BY228ph

Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE

PH 33D

Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614

IR2156 application

Abstract: C 13 PH Zener diode zener diode ph 48 C 12 PH Zener diode cfl circuit diagram of 12 volts IR2156 ZENER DIODE PH 5.1V IR2156S 12v ballast ic 1N4007
Contextual Info: Data Sheet No. PD60182-I IR2156 S & (PbF) BALLAST CONTROL IC • Programmable dead time • DC bus under-voltage reset • Shutdown pin with hysteresis • Internal 15.6V zener clamp diode on Vcc • Micropower startup (150µA) • Latch immunity and ESD protection

B30A60VNC

Contextual Info: SEMICONDUCTOR TECHNICAL DATA B30A60VNC SCHOTTKY BARRIER TYPE DIODE STACK SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : Io=30A Tc=125°C . • Repetitive Peak Reverse Voltage : V r rm = 6 0 V .

C 11 PH Zener diode

Contextual Info: Data Sheet No. PD60182-I IR2156 S & (PbF) BALLAST CONTROL IC Features • • • • • • • Programmable dead time • DC bus under-voltage reset • Shutdown pin with hysteresis • Internal 15.6V zener clamp diode on Vcc • Micropower startup (150µA)

C5V6 ph

Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Contextual Info: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

C 12 PH Zener diode

Abstract: PH 21 DIODE do214ac zener po111 VESDxx-02V GCDA05 GCDA15C-1 GL05-HT3 GL05T GL24T
Contextual Info: w w w. v i s h a y. c o m PRODUCT OVERVIEW ESD PROTECTION DIODES ESD Protection Diodes Introduction Typical Current-Voltage-Diagram of an ESD Protection Diode With the increasing use of Integrated Circuits in mobile and wired communication devices and consumer products, it is more important than ever to protect sensitive

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

ph-30 diode

Abstract: Sharp Semiconductor Lasers photodiode dvd cd laser diode for rw drive Laser Diode for cd rw Laser Diode Frame Type GH6C005B3 RED laser diode operating Temperature GH06510B2A GH17805B2AS GH6D407B5A
Contextual Info: E094_098.fm 94 ページ ２００１年９月２３日 日曜日 午後１時３２分 LASER LASER DIODE ✩New product ★Under development • LASER DIODES Wavelength nm Model No. (Tc = 25°C) Optical power output (mW) MAX. CW Pulse GH06507B2A GH06507B2B

Chiller

Abstract: 532 nm laser diode Nd-yag NL220 invisible TEM00 c 10 ph diode diode marking 355 Tokyo Instruments
Contextual Info: S E R I E S HIGH ENERGY Diode Pumped Q-switched Nd:YAG Lasers FEATURES m 10 mJ at 1064 nm m 1 kHz repetition rate m High pulse energy stability m TEM00 shape beam m PIV version is available m Simple and robust all solid Diode pumped NL220 series lasers development as well as industrial

buk444

Abstract: BUK454-500B Diodes REPLACEMENT BUK9575 BUK7528-55 BUK102-50GS BUK444-500B BUK455 600B BUK457-500B BUK457-600B
Contextual Info: Philips Semiconductors Power Diodes Replacement list REPLACED/WITHDRAWN TYPES The following type numbers were included in the previous issue of this data handbook, but are not in the current edition. TYPE NUMBER REASON FOR DELETION BUK100-50GS Discontinued

C 12 PH Zener diode

Abstract: C 15 PH Zener diode C 13 PH Zener diode ph 41 zener diode C 12 PH zener Zener PH 200 ph 18 c zener diode ph Series Zener PH 36 Zener ph 12 c zener diode
Contextual Info: S OD 5 2 3 S OD 3 2 3 S OD 12 3 DO 2 19 A B S M F S OT 2 3 DO 2 14 ( S MA ) M i c r o MEL F Q u a d r o MEL F S OD 8 0 M i n i MEL F S OD 8 0 MEL F DO 2 13 DO 3 5 DO 41 w w w. v i s h a y. c o m Selector Guide SMALL SIGNAL ZENER DIODES S MALL S I G NAL DIODE S

2063M

Contextual Info: 3QE » Hi 7^2^237 00220760 S G S-TH0MS0N S G S -T H O M S O N • _ E L ie ¥ G M Q g S _ I L 6 2 1 7 A STEPPER MOTOR DRIVER Th e power section of the device is a dual H-Bridge drive with internal clamp diodes for current circula­ tion. To maintain the degree of accuracy required

Contextual Info: 13 Neptune Ave. Brooklyn NY 11235 Tel. 718 934-4500 Fax. (718) 332-4661 Website: www.minicircuits.com PRODUCT CHANGE NOTICE PCN Form (D4-E000-73) PCN#15-037 NOTIFICATION DATE: June 12, 2015 MODEL(S) AFFECTED: ROS-3800+ & ZX95-3800-S+ EXTENT OF CHANGE: 1. Replacement of supplied transistor and varactor diode based on discontinuation of supply with alternate,

IRS2156

Abstract: IR2156 application IR2156SPBF ir2156s IR2156 IR2156PBF programmable ignition timing IRS21 SOICN-14
Contextual Info: IR2156 S PbF BALLAST CONTROL IC Features Programmable dead time DC bus under-voltage reset Shutdown pin with hysteresis Internal 15.6V zener clamp diode on Vcc Micropower startup (150 µA) Latch immunity and ESD protection Ballast control and half bridge driver in one IC

RS 329g

Abstract: LN26RP LN38GPPN LN303240UN 265r 430Y
Contextual Info: Visible Light Emitting Diodes • Point LEDs Round Type S hape Package No. Red T ype No. LN 21R P H L 05.0mm 01 LN 21R C PH L Red clear W h ite diffusion LN 31G PH L LN 31G C PH L LN 31G PH L(G ) Transparent LN 31G C PH L(G ) LN 21R P S L Red diffusion LN 31G PSL