PG105 Search Results

netxtreme programmer

Abstract: BCM5701 PG105R S6D0 netxtreme 57xx gigabit controller BCM5704 BCM5715 broadcom BCM5715C BCM5788/M mac 7a8 transistor
Contextual Info: Programmer’s Guide BCM57XX Host Programmer Interface Specification for the NetXtreme Family of Highly Integrated Media Access Controllers 57XX-PG105-R 5300 California Avenue • Irvine, CA 92617 • Phone: 949-926-5000 • Fax: 949-926-5203 01/29/08 BCM57XX

MC-7894

Abstract: MC-7894-AZ 7894
Contextual Info: DATA SHEET GaAs MULTI-CHIP MODULE MC-7894 1 GHz CATV 24 dB POWER DOUBLER AMPLIFIER DESCRIPTION The MC-7894 is a GaAs Multi-chip Module designed for use in CATV applications up to 1 GHz. This unit has low distortion, low noise figure and return loss across the entire frequency band.

nec 7893

Abstract: 7893 MC-7893 MC-7893-AZ
Contextual Info: DATA SHEET GaAs MULTI-CHIP MODULE MC-7893 1 GHz CATV 22 dB POWER DOUBLER AMPLIFIER DESCRIPTION The MC-7893 is a GaAs Multi-chip Module designed for use in CATV applications up to 1 GHz. This unit has low distortion, low noise figure and return loss across the entire frequency band.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HS350

Contextual Info: GaAs INTEGRATED CIRCUIT µPG2151T5K L, S-BAND SPDT SWITCH DESCRIPTION The µPG2151T5K is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from

HS350

Abstract: PG2155TB UPG2155TB UPG2155TB-A
Contextual Info: GaAs INTEGRATED CIRCUIT UPG2155TB NEC’s L-BAND 4 W HIGH POWER SPDT SWITCH DESCRIPTION The µPG2155TB is an L-band SPDT GaAs FET switch developed for digital cellular or cordless telephone applications. The device can operate from 500 MHz to 2.5 GHz, with low insertion loss and high linearity.

PG2020

Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Contextual Info: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6

12-PIN

Abstract: HS350 uPG2311T5F
Contextual Info: GaAs INTEGRATED CIRCUIT µPG2311T5F GaAs MMIC LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The µPG2311T5F is a GaAs MMIC LNA for Car Navigation Systems and Handy GPS. This IC consists of two stage amplifiers and has high gain performance. FEATURES • High gain

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HS350

Contextual Info: GaAs INTEGRATED CIRCUIT µPG2158T5K L, S-BAND SPDT SWITCH DESCRIPTION The µPG2158T5K is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from

ne3514s02

Abstract: NE3514 NE3514S02-T1C s2p marking t1c rogers 5880 HS350 k-band amplifier
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS

IC3208

Abstract: P12315EJ2V0DS00
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT ¿PG105B-1 S-BAND LOW NOISE AMPLIFIER DESCRIPTION The ¿PG105B-1 GaAs Am plifier has a very low noise characteristics in the S-band. This device has 3 stages FET amplifiers to achieve high linear gain. This amplifier is ideal for microwave communication system and the

Contextual Info: SEC S-BAND LOW NOISE AMPLIFIER OUTLINE DIMENSIONS FEATURES PG105B Units in mm OUTLINE B06 • VERY LOW NO ISE: NF ^ 2.2 dB at f = 2.7 to 4.2 GHz • H IG H POW ER GAIN: G p = 25 dB at f = 2.7 to 3.4 GHz • H IG H RELIABILITY • HER M ETIC PACKAGE DESCRIPTION

SN0608098-GP

Abstract: BQ24745RHDR-GP lcd 15.4 inverter EPSON C691 MAIN AMD RS780 tps51125 MEC5035 foxconn TPS51117PWR-GP BCM5761
Contextual Info: 5 4 3 2 1 FOOSE UMA Schematics Document AMD 15.4" D D AMD Giffin CPU S1G2 AMD RS780 +SB700 C C 2008-01-04 REV : SB B B DY : Nopop Component 5761 : Use BCM5761E 5756 : Use BCM5756M B_TPM : Use LOM TPM C_TPM : Use China TPM <Variant Name> A A Wistron Corporation

nec 7893

Abstract: MC-7893 MC-7893-AZ
Contextual Info: GaAs MULTI-CHIP MODULE MC-7893 1 GHz CATV 22 dB POWER DOUBLER AMPLIFIER DESCRIPTION The MC-7893 is a GaAs Multi-chip Module designed for use in CATV applications up to 1 GHz. This unit has low distortion, low noise figure and return loss across the entire frequency band.

MC-7894

Abstract: MC-7894-AZ
Contextual Info: GaAs MULTI-CHIP MODULE MC-7894 1 GHz CATV 24 dB POWER DOUBLER AMPLIFIER DESCRIPTION The MC-7894 is a GaAs Multi-chip Module designed for use in CATV applications up to 1 GHz. This unit has low distortion, low noise figure and return loss across the entire frequency band.

LG1237

Abstract: ARINC 738 pressure sensor interface with 8051 airbus avionics block diagram LG1237 pressure transducer digital airspeed sensors LG-1237 Non SMART Pressure Transmitter airbus a320 block diagram GE90
Contextual Info: A Matchbook-Sized "Smart" Pressure Transducer for Critical Applications Paul B. DuPuis Honeywell Military Avionics Division St. Louis Park, Minnesota 55416 612 542-5965 Abstract: Modern control systems strive to attain peak efficiency to minimize costs; reduce pollution; and

NE3508M04-T2-A

Abstract: HS350 NE3508M04 NE3508M04-A NE3508M04-T2 marking v79 ne3508
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package

pg2010

Abstract: PG1083 PG2020 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG2001
Contextual Info: Linear hFE from 10 mA to 2 amps Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi.„,i to 160 volts 'M h '.4 M T O —46 T O —46 T O —4 6 T O —4 6 T O —46 T O —4 6 S iîS $*‘v>

electronics semiconductor devices

Abstract: UPG2155TB-A
Contextual Info: GaAs INTEGRATED CIRCUIT UPG2155TB NEC’s L-BAND 4 W HIGH POWER SPDT SWITCH DESCRIPTION The µPG2155TB is an L-band SPDT GaAs FET switch developed for digital cellular or cordless telephone applications. The device can operate from 500 MHz to 2.5 GHz, with low insertion loss and high linearity.

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2155TB L-BAND 4 W HIGH POWER SPDT SWITCH DESCRIPTION The µPG2155TB is an L-band SPDT GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss and high

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2151T5K L, S-BAND SPDT SWITCH DESCRIPTION The µPG2151T5K is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from

Contextual Info: GaAs MULTI-CHIP MODULE MC-7893 1 GHz CATV 22 dB POWER DOUBLER AMPLIFIER DESCRIPTION The MC-7893 is a GaAs Multi-chip Module designed for use in CATV applications up to 1 GHz. This unit has low distortion, low noise figure and return loss across the entire frequency band.