PG105B Search Results

IC3208

Abstract: P12315EJ2V0DS00
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT ¿PG105B-1 S-BAND LOW NOISE AMPLIFIER DESCRIPTION The ¿PG105B-1 GaAs Am plifier has a very low noise characteristics in the S-band. This device has 3 stages FET amplifiers to achieve high linear gain. This amplifier is ideal for microwave communication system and the

Contextual Info: SEC S-BAND LOW NOISE AMPLIFIER OUTLINE DIMENSIONS FEATURES PG105B Units in mm OUTLINE B06 • VERY LOW NO ISE: NF ^ 2.2 dB at f = 2.7 to 4.2 GHz • H IG H POW ER GAIN: G p = 25 dB at f = 2.7 to 3.4 GHz • H IG H RELIABILITY • HER M ETIC PACKAGE DESCRIPTION

IC3208

Contextual Info: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT PG105B-1 S-BAND LOW NOISE AMPLIFIER DESCRIPTION The ¿ iP G 1 0 5 B -1 GaAs Am plifier has a very low noise characteristics in the S-band. This device has amplifiers to achieve high linear gain.

ma3560

Abstract: UPG105B
Contextual Info: NEC S-BAND LOW NOISE AMPLIFIER OUTLINE DIMENSIONS FEATURES PG105B Units in mm OUTLINE B06 • VERY LOW NO ISE: NF ^ 2.2 dB at f = 2.7 to 4.2 GHz • HIG H POW ER GAIN: G p = 25 dB at f = 2.7 to 3.4 GHz • H IG H RELIABILITY • HER M ETIC PACKAGE DESCRIPTION