API Electronics
Abstract: PG1024 DD0007 PG1018 PG1019 PG1020 PG1021 PG1022 PG1023 PG1035
Contextual Info: A P I .».3 * 0077 / E L E C T R O N I C S I NC ri m T| D 0 4 3 S c12 0 D 0 D 0 7 ? S ; I* INTERIM BULLETIN S ubject to Revision W ithout Notice -Ju ly 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN TYPE PG1018 thru PG1035, 2 A M P NPN SILICO N PLANAR POWER TRANSISTORS
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PG1018
Abstract: PG1019 PG1020 PG1021 PG1022 PG1030 PG1031 PG1035 PGI023 Pirgo Electronics
Contextual Info: A P I EL ECT RO NIC S INC ' 13 1 DE | 0 0 4 B S CJS 0 D 0 0 0 7 ? S | ~ 3 *°9 7 7J - 7 ? 3 3 - 0 'f T ' - INTERIM BULLETIN S u b je c t to R e visio n W ithout Notice -July 15/ 1971 V POWER TRANSISTOR ENGINEERING BULLETIN n _ _ zo -o — I— oo TYPE PG1018 thru PG1035, 2 A M P NPN
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pg1018pg1035pg1019pg1020+9pg1021pg1022pg1024pg1025pg1026pg1030pg1031pgi023pirgo electronics
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PG2020
Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Contextual Info: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6
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2n4862pg1001pg1002pg1003+16pg1004pg1005pg1006pg1007pg1008pg1009pg2020pg2011to46pg1083pg21022n4863pg1050pg1051pg1010pg1053
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8712 RESISTOR
Abstract: NES1823M-180
Contextual Info: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 180 W of output power CW with high linear gain, high
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SW SPDT 6pin
Abstract: HS350 VP215 marking G3J
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2015TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2015TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
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pg2015tbsw spdt 6pinhs350vp215+1marking g3j
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marking G3J
Abstract: PG2015TB
Contextual Info: GaAs INTEGRATED CIRCUIT PG2015TB L, S-BAND SPDT SWITCH DESCRIPTION The PG2015TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
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SW SPDT 6pin
Abstract: HS350 VP215
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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pg2004
Abstract: PG2011 pg2001 PG2006
Contextual Info: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE
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2n4862pg1001pg1002pg1003+10pg1004pg1005pg1006pg1007pg1008pg1009pg2004pg2011pg2001pg2006
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NES1823M-180-A
Contextual Info: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It operates at 12 V and is capable of delivering 180 W of output power CW with high
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SW SPDT 6pin
Abstract: HS350 VP215
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG168TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG168TB is GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.
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pg168tbsw spdt 6pinhs350vp215 |
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SW SPDT 6pin
Abstract: HS350 VP215
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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sw spdt 6pinhs350vp215 |
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HS350
Abstract: VP215
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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pg2015tbir260vp215ws260+2hs350pg10356jj02v0ds
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HS350
Abstract: VP215
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG168TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG168TB is GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.
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