IMT2000 Search Results

Filled PTFE

Contextual Info: Model C2023J5003AHF Rev A Ultra Low Profile 0805 3 dB, 90° Hybrid Coupler Description The C2023J503AHF is a low cost, low profile sub-miniature high performance 3 dB coupler in an easy to use surface mount package. It is designed for WiMax,WiBro, UMTS, and IMT2000 applications. The C2023J503AHF is ideal

20LOG10

Contextual Info: Model C2023J5003AHF Rev B Ultra Low Profile 0805 3 dB, 90° Hybrid Coupler Description The C2023J503AHF is a low cost, low profile sub-miniature high performance 3 dB coupler in an easy to use surface mount package. It is designed for WiMax,WiBro, UMTS, and IMT2000 applications. The C2023J503AHF is ideal

8712 RESISTOR

Abstract: NES1823M-180
Contextual Info: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 180 W of output power CW with high linear gain, high

C2023 transistor

Abstract: C2023 ptfe tape C2023J5003A00
Contextual Info: Model C2023J5003A00 Rev E Ultra Low Profile 0805 3 dB, 90° Hybrid Coupler Description The C2023J503A00 is a low cost, low profile sub-miniature high performance 3 dB coupler in an easy to use surface mount package. It is designed for WiMax,WiBro, UMTS, and IMT2000 applications. The C2023J503A00 is ideal for

NES1823S-90

Contextual Info: DATA SHEET GaAs FET NES1823S-90 90 W L, S-BAND SINGLE-END POWER GaAs FET DESCRIPTION The NES1823S-90 is a 90 W single-end type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 90 W of output power CW with high linear gain, high efficiency

nec 0882

Abstract: transistor NEC D 882 p nec d 882 p datasheet nec d 882 p NES1823P-45 1658 NEC
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-45 45 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 45 W of output power CW with high

FUJITSU MICROWAVE TRANSISTOR

Abstract: FLL1500IU-2C Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500
Contextual Info: FUJITSU APPLICATION NOTE - No 008 150-W, 2.11- 2.17 GHz Balanced Compact Amplifier For IMT2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and IMD

C2023J5003A00

Contextual Info: Model C2023J5003A00 Rev D Ultra Low Profile 0805 3 dB, 90° Hybrid Coupler Description The C2023J503A00 is a low cost, low profile sub-miniature high performance 3 dB coupler in an easy to use surface mount package. It is designed for WiMax,WiBro, UMTS, and IMT2000 applications. The C2023J503A00 is ideal for

Contextual Info: Model C2023J5003A00 Rev B Ultra Low Profile 0805 3 dB, 90° Hybrid Coupler Description The C2023J503A00 is a low cost, low profile sub-miniature high performance 3 dB coupler in an easy to use surface mount package. It is designed for WiMax,WiBro, UMTS, and IMT2000 applications. The C2023J503A00 is ideal for

NES1823M-45

Contextual Info: PRELIMINARY DATA SHEET GaAs FET NES1823M-45 45 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-45 is a 45 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000, PCS, and PDC base station systems. It is capable of delivering 45 W of output power CW with high linear

C2023

Abstract: C2023 transistor
Contextual Info: Model C2023J5003AHF Rev A Ultra Low Profile 0805 3 dB, 90° Hybrid Coupler Description The C2023J503AHF is a low cost, low profile sub-miniature high performance 3 dB coupler in an easy to use surface mount package. It is designed for WiMax,WiBro, UMTS, and IMT2000 applications. The C2023J503AHF is ideal

Contextual Info: SAW Filters TMX P018 SAW Bandpass Filter – IMT2000 – RF Tx Specification Rev 2 Package Drawing & Pinout .P01

Contextual Info: Model C2023J5003AHF Rev D Ultra Low Profile 0805 3 dB, 90° Hybrid Coupler Description The C2023J5003AHF is a low cost, low profile sub-miniature high performance 3 dB coupler in an easy to use surface mount package. It is designed for WiMax,WiBro, UMTS, and IMT2000 applications. The C2023J5003AHF is ideal

DC1722J5020AHF

Abstract: GSM1800 S34C
Contextual Info: Model DC1722J5020AHF Rev C Ultra Low Profile 0805 20dB Directional Coupler Description The DC1722J5020AHF is a low cost, low profile sub-miniature high performance 20 dB directional coupler in an easy to use surface mount package. It is designed for 1700 – 1900MHz applications including: WCDMA, CDMA, IMT2000,

NES1823P-50

Abstract: gaas mes nec 5703 IDA45
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-50 50 W L-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-50 is a 50 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS, and IMT2000 base station systems. It is capable of delivering 50 W of output power CW with high

Contextual Info: Multi-carrier Power Amplifier MCPA4000 Power FEATURES 30 Watts • Supports UMTS / IMT2000 3rd generation base stations Frequency Band • High efficiency DC/RF allows for lower operational costs and better thermal performance IMT2000 / UMTS Technology • Advanced wideband high performance

NES1823M-240

Abstract: j3780
Contextual Info: DATA SHEET GaAs FET NES1823M-240 240 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-240 is a 240 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It operates at 12 V and is capable of delivering 240 W of output power CW with high

NEC 952

Abstract: NES1823P-140
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-140 140 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-140 is a 140 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 140 W of output power CW with

TDFM1B-2140L-10

Abstract: 7483
Contextual Info: CHIP DIELECTRIC FILTERS チップ誘電体フィルタ TDF Series for IMT2000 東光品番 中心周波数 帯域幅 挿入損失 VSWR 選択度 重さ 外形寸法 TOKO Center Freq. Bandwidth Insertion Loss VSWR Selectivity Weight Dimensions mm Part Number

NEC 743 a

Abstract: transistor NEC D 586 NES1823P-70
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-70 70 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-70 is a 70 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 70 W of output power CW with high

NES1823M-180-A

Contextual Info: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It operates at 12 V and is capable of delivering 180 W of output power CW with high

RF Hitec

Abstract: 455KHz notch filter 30 MHz crystal notch filter Ceramic Filters Low Pass 5MHz LC Band Pass Filter band pass filter 10.7mhz RHF-1950R20 RHF-897.2R GSM RHF-935-25A IMT-2000
Contextual Info: CAVITY FILTER Cellular/ GSM IMT2000/ WLL FILTER ISO9001 Certified V. 1.8  [FEATURES] Application for Base Stations, Repeaters Low Insertion Loss High Attenuation Custom Design and Development is available GSM Cellular ❍ ❍ ❍ ❍ Model Frequency Range

AN914

Abstract: APP914 IMT-2000 MAX2383 MAX2383EVKIT Intermediate frequency maxim upconverter
Contextual Info: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: W-CDMA, upconverter, driver, 570MHz IF, WCDMA, intermediate frequency, 570 mhz, UMTS, IMT2000, IMT2000, ARIB, 570mhz if May 01, 2002 APPLICATION NOTE 914 WCDMA Upconverter/Driver Eliminates SAW Filter Supports

Contextual Info: ◆Low Power Consumption ◆Dropout Voltage : 25 A TYP. : 30mV @ 30mA : 100mV @100mA : 0.8V to 5.0 V : More than 150 mA (300mA limit) : 70dB @ 1kHz ◆Output Voltage Range ◆Output Current •APPLICATIONS ●Mobile Phones (PDC, GSM, CDMA, IMT2000 etc.)