PF0047 Search Results

PF0047

Contextual Info: PF0047A/PF0067A MOS FET Power Amplifier Module for E-TACS Handy Phone HITACHI Features • High Efficiency — PF0047A: 58 % Typ at 1.2 W — PF0067A: 52 % Typ at 1.2 W • Low voltage operation: 4.8 V • High power gain: 1 mW input • Low power control current: 500 A Typ

PF0067A

Contextual Info: H ITACH I PFO047A/PFOO67A MOS FET Power Amplifier Module for E-TACS Handy Phone HITACHI ADE-208-311B Z Preliminary 3rd. Edition July 1996 Features • High Efficiency PF0047A: 58 % Typ at 1.2 W PF0067A: 52 % Typ at 1.2 W • Low voltage operation: 4.8 V

PF0131

Abstract: PF0141 PF0144 PF0145 PF0148 PFS 3000 PF0310A PF0049A PF0147 PF0040
Contextual Info: FET MODULE •High frequency amplifier Package Type No. cods RF-B2 PF0Q3Q PF0031 PF0032 PF0120 PF0121 PF0130 PF0131 PF0210 RF-B3 PF0040 PF0042 RF-E PFÓ02S PF0026 PF0027 PFQ04S PF0045A PF0047A PF0049A PFÖ065 PF0065A PF0O67A PF0144 PF0145 PF0146 PF0150 PF0231

Contextual Info: PF0047A/PF0067A MOS FET Power Amplifier Module for E-TACS Handy Phone HITACHI ADE-208-311B Z Preliminary 3rd. Edition July 1996 Features • High Efficiency — PF0047A: 58 % Typ at 1.2 W — PF0067A: 52 % Typ at 1.2 W • Low voltage operation: 4.8 V •

Contextual Info: PF0045 Series Product Preview MOS FET Power Amplifier Module Mobile Phone PF0045: For AM PS 824-849 MHz PF0047: For E-TACS 872-905 MHz O U T LIN E DRAW ING I FEATURES ’ Light and thin package 5 g. 5.0 mm t 1 Low voltage operation 6V • Low power control current 300 ¿iA

Contextual Info: PF0047A/PF0067A-MOS FET Power Amplifier Module for E-TACS Handy Phone Pin Arrangement Features • High Efficiency PF0047A: 58 % typ. at 1.2 W PF0067A: 52 % typ. at 1.2 W • Low voltage operation: 4.8 V • High power gain: 1 mW input • Low power control current: 500 iA typ.

pf0067a

Abstract: BL01RN1-A62 K 872 PF0047A Hitachi Scans-001
Contextual Info: PF0047A/PF0067A MOS FET Power Amplifier Module for E-TACS Handy Phone HITACHI Features • High Efficiency — PF0047A: 58 % Typ at 1.2 W — PF0067A: 52 % Typ at 1.2 W • Low voltage operation: 4.8 V • High power gain: 1 mW input • Low power control current: 500 xA Typ

HD 62 hitachi

Contextual Info: ADE-208-251A Z PF0047A/PF0067A MOS FET Power Amplifier Module for E-TACS Handy Phone Preliminary HITACHI January 1995 Pin Arrangement Features • High Efficiency PF0047A: 58 % typ. at 1.2 W PF0067A: 52 % typ. at 1.2 W • Low voltage operation: 4.8 V • High power gain: 1 mW input

PF0045

Contextual Info: PF0045 Series Product Preview MOS FET Power Amplifier Module Mobile Phone PF0045: For AMPS 824-849 MHz PF0047: For E-TACS 872-905 MHz I O U T L IN E DRAW ING • FEATURES ' Light and thin packagc 5 g, 5.0 mm t ' Low voltage operation 6V 1 Low power control current 300

All mobile ic code image

Abstract: hitachi pbx HD81504 HD814103 ic 747 cn hitachi 4-bit lcd PF0145 DTMF mobile HA22004 HA16811A
Contextual Info: CONTENTS Selection Guide fo r A p p lic a tio n s . 7 • Telecom Network System.

circuit diagrams retu 3.02

Abstract: APPLIED MICROSYSTEMS CORP 68020 a23 445-1 VMIVME DR11W 0000A018 Panduit 050-040-455 S43A MC68153 perkin
Contextual Info: VMIVME-DR11W-A VMEbus-T0-DR11W INTERFACE INSTRUCTION MANUAL DOCUMENT NO. 500-000121-000 E Revised 08 December 1993 VME MICROSYSTEMS INTERNATIONAL CORPORATION 12090 SOUTH MEMORIAL PARKWAY HUNTSVILLE, AL 35803-3308 205 880-0444 1-800-322-3616 N O T IC E The information in this document has been carefully checked and is

Contextual Info: Signetìcs SCB68430 Direct Memory Access Interface DMAI Product Specification Microprocessor Products DESCRIPTION FEATURES The SCB68430 Direct Memory Access Interface (DMAI) is a single channel interface circuit which is intended to complement the performance and archi­

HD81504

Abstract: hitachi pbx HA22004 HD64941 HD63084 HD64530 HA12158 HVU354 Hitachi hg51 PF0049A
Contextual Info: Selection Guide for Applications Telecom Network System Optical trunk 2.4 Gb/s, 10 Gb/s -C\ Multi-function phone . I |h Frame III relay / FTTH ATM-Lan □ • Exchange ISDN PC / / ^ \ ISDN line / FTTC ] fl| PBX . O h Amusement TV phones Mobile Communications

HG62G

Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Contextual Info: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2