PEPI N Search Results

Contextual Info: MOE D • MOSSTlb 0D137Ö3 3 ■ A M I . . T - M 2 - 8 \ G ould AMI S ilic o n F ou n d ry A pproach Gould AMI is proud of the leadership position it occupies in today’s fast-paced world of process and technology. Our Silicon Foundry services and capabilities are truly world class. We pro­

MC 2882

Abstract: 2SC2862 MC 342 transistor 210B MC 2871
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: SK10GD12T4ET 3' F HI J:E -%2&'' ,.4& */'& 'B& /K/&1 Absolute Maximum Ratings Symbol Conditions IGBT C:DL 3M F HI J: 6: 3M F OQI J: 6:RS .B'( OHPP C OQ ; 3' F QP J: OI ; H5 ; V HP C 3M F OIP J: OP [' 3' F HI J: OI ; 3' F QP J: OH ; H5 ; 6:RSF T U 6:%,+ C: F WPP CX C7D Y OI CX

TD 6905 S

Abstract: ci 7430 TD 6905
Contextual Info: LDVER ROW 1000PF, 2 K V ELECTRICAL SPECIFICATIONS: 1.Û TURNS RATID P L -P 4 -P 2 i C J1-J2) (P 3 - P 7 - P 6 ) i C J 3 -J 6 ) 2.0 INDUCTANCE (P 6 -P 3 ) (PE-PI) 3.0 LEAKAGE INDUCTANCE P 6 -P 3 <V1TH J 6 AND J 3 SHDRT) P2-P1 (WITH JE AND J1 SHDRT) 4.Û INTERWINDING CAPACITANCE (P 6 ,P 7 ,P 3 ) TD (J 6 ,J 3 >

USE OF TRANSISTOR

Abstract: pepi c thermal transistor and or IC Ultrasonic pepi testing good or bad electronic components circuit TO-220FN pn junction diode structure shin-etsu Chemical
Contextual Info: Operation notes Transistors Operation notes zSelecting semiconductor devices The reliability of semiconductor devices is determined primarily by conditions of use. When using semiconductors, pay careful attention to any changes in conditions and be aware of the specifications of each device. Absolute maximum

Contextual Info: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power

Contextual Info: Honeywell HC6216 Military Products 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 |im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x10 rad SiOz • Low Operating Power

Contextual Info: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2Kx 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 iim Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad Si02

Contextual Info: Technical information Back-thinned TDI-CCD Back-thinned TDI time delay integration -CCDs allow acquiring high S/N images even under low-light conditions during high-speed imaging and the like. TDI operation yields dramatically enhanced sensitivity by integrating the

pepi cr

Contextual Info: 55E D • MS51fl?2 OOGOflOa 277 ■ H0N3 Honeywell HONEYWELL/S S E C Military Products «"p q , -23 - o S 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION OTHER • Fabricated using DESC approved QML 1.2|xm RICMOS process • Access Time of 25 ns (typical

Contextual Info: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as

Contextual Info: Honeywell HC6364 Military Products 8K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 urn Process • Total Dose Hardness through 1x106 rad S i02 • Neutron Hardness through 1x1014cm '2 • Access Time of 25 nsec (typical)

HC6264

Contextual Info: HONEYldELL/SS ELEK-. PII L 03 DËJ 4551Û7E 00 005 2E 1 ^ ¿ -2 3 -/2 Honeywell HC6264 Preliminary Digital Technologies 8K x 8 Radiation-Hardened Static RAM - HC6264 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiall .2 im Process • Access Time 50ns Typical

CMOS

Contextual Info: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications

KD 2.d smd transistor

Contextual Info: Honeywell Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 |um Process • Total Dose Hardness through 1x106 rad S i02 • Listed on SMD #5962-92153. Available as MIL-l-38535 QML Class Q and Class V

NRED 61

Abstract: HT21X
Contextual Info: in tj 80960CA-33, -25, -16 32-BIT HIGH PERFORMANCE EMBEDDED PROCESSOR • Two Instructions/Clock Sustained Execution • Four 59 Mbytes/s DMA Channels with Data Chaining • Demultiplexed 32-Bit Burst Bus with Pipelining • 32-bit Parallel Architecture — Two Instructions/clock Execution