PDTC123YM Search Results

PDTA123YMB

Abstract: PDTC123YMB
Contextual Info: 83B PDTC123YMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = 10 k Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PDTC123YMB

Abstract: PDTA123YMB
Contextual Info: 83B PDTC123YMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

prtr5v0u6s

Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
Contextual Info: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years

LPC2148 i2c

Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Contextual Info: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.

PDTA123YMB

Abstract: PDTC123YMB
Contextual Info: 83B PDTA123YMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = 10 k Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PDTA123Y

Contextual Info: PDTA123Y series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 04 — 3 September 2009 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors RET . Table 1. Product overview Type number Package

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

DATA SHEET inverter Delta

Abstract: PDTA123YE PDTA123YK PDTA123YM PDTA123YS PDTA123YT PDTA123YU SC-101 SC-43A SC-59A
Contextual Info: PDTA123Y series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 03 — 5 April 2005 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors RET . Table 1: Product overview Type number Philips JEITA

PDTC113EU

Abstract: PDTA123EE PDTA144EE PUMB16 PEMH15 PEMD4 PDTC113ZU PDTC114EU PUMH15 PUMH20
Contextual Info: Semiconductors Philips’ Resistor-Equipped Transistor RET portfolio Double Resistor-Equipped Transistors SOT457 (SC-74) SOT363 (SC-88) SOT666 Key features • Extensive range - 241 products already released - ~ 400 products will be available in 2004 • Single or dual RETs with large choice of resistor combinations

BUK2114

Abstract: BUK2114-50SYTS saa7117 SAA7136E MPSA92 168 saa7136 buk2914-50syts TDA8920BTH bu4508dx KMZ52
Contextual Info: Index Type number Page number 1N4148 34 1N4531 34 1N47xxA series 44 1PS10SB62 32 1PS10SB63 32 1PS10SB82 32 1PS181 36 1PS184 36 1PS193 34 1PS226 36 1PS59SB10 28 1PS59SB14 28 1PS59SB15 28 1PS59SB16 28 1PS59SB20 30 1PS59SB21 28 1PS66SB17 32 1PS66SB62 32 1PS66SB63

PDTC123YS

Abstract: PDTC123Y PDTC123YE PDTC123YK PDTC123YM PDTC123YT PDTC123YU SC-101 SC-43A SC-59A
Contextual Info: PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 04 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors RET family. Table 1. Product overview Type number Package

tda8510j 2.1 creative amplifiers

Abstract: transistor SMD wm9 SAA7119 IC TDA8510J EQUIVALENT IC NO. LIST Rf based remote control robot using 8051 SAA7119 philips TDA8947J equivalent BLF268 HEF4000B Family specifications TDA8947J
Contextual Info: Semiconductors Choice. Performance. Flexibility. The Philips Portfolio 360º vision of multimedia Introduction to ��������������� � ������������� ������� ��������������

Contextual Info: PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 04 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors RET family. Table 1. Product overview Type number Package

PDTA123YE

Abstract: PDTA123YK PDTA123YM PDTA123YS PDTA123YT PDTA123YU SC-101 SC-43A SC-59A SC-75
Contextual Info: PDTA123Y series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 04 — 3 September 2009 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors RET . Table 1. Product overview Type number NXP JEITA

PDTA123YMB

Abstract: PDTC123YMB
Contextual Info: 83B PDTA123YMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

TRANSISTOR S1A 64 smd

Abstract: SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030
Contextual Info: Discrete Semiconductors Selection Guide 2010 Diodes, transistors, ESD and signal conditioning devices Excellence in portfolio and performance Diodes Introducing new package technology Page 7 Portable and increasingly smaller end products fuel the race towards more sophisticated functionality in smaller form

biss 0001

Abstract: PBLS1504V PEMD4 PEMD15 PEMH15 PEMH24 PBLS1503V PEMD6 PEMB10 PMZ250UN marking
Contextual Info: NXP ultra-small diodes and transistors for portable applications Downsize the footprint, boost the performance At NXP, our comprehensive portfolio of ultra-small diodes and transistors enables high performance in increasingly small portable electronics. We safeguard sensitive ICs with advanced

2N7002 NXP MARKING

Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
Contextual Info: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and

IP4223CZ6

Abstract: power one pmp 7.24 IP4058CX8/LF ip4065cx11 IP4056CX8/LF 2 x 40w amplifier DIODE BAT86 replacement BAS85 Spice KEC SOT-23 bav99 IP4059CX5/LF
Contextual Info: NXP has fully embraced ecological and environmental issues, from maintaining certified environmental management systems General Applications selection guide 2008 to communicating our environmental policy to employees and other stakeholders. Extending this ‘profitable green’ ideal to our

sc74750

Abstract: MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921
Contextual Info: Discretes For Bipolar Transistors and Discrete MOSFETs please check the Power Management Chapter, pages 189-239. For RF Consumer Products please find following tables in the RF Products Chapter from page 252 onwards: RF PIN diodes RF Bandswitch diodes RF Varicap diodes