PD434 Search Results

uPD434008LE-25

Abstract: IC-8528 uPD434008-20 IC852 upd434008 PD434008LE
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD434008 4M-BIT CMOS FAST STATIC RAM 512K-WORD BY 8 BITS Description The µPD434008 is a high speed, low power, 4 194 304 bits 524 288 words by 8 bits CMOS static RAM. The µPD434008 is packed in 36-pin plastic SOJ. Features

IC-8527

Abstract: IC-2996 UPD434004 k 2996 PD434004
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD434004 4M-BIT CMOS FAST STATIC RAM 1M-WORD BY 4 BITS Description The µPD434004 is a high speed, low power, 4 194 304 bits 1 048 576 words by 4 bits CMOS static RAM. The µPD434004 is packed in 32-pin plastic SOJ. Features

Contextual Info: PD434001 4,194,304 X 1-Bit Static CMOS RAM W NEC Electronics Inc. Description Pin Configuration The /j PD434001 is a 4,194,304-word by 1-bit static RAM fabricated with advanced silicon-gate technology. A unique design with CMOS peripheral circuits and N-channel memory cells, the PD434001 is a high­

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT \i PD434008 4 M -BIT CMOS FAST STATIC RAM 512K-WORD BY 8 BITS Description The /¿PD434008 is a high speed, low p o w e r, 4 194 304 b its 524 288 w o r d s by 8 bits C M O S sta tic RAM T h e /¿PD434008 is packed in 36-pin p la s tic SOJ.

ITE 8527

Abstract: IC-8527
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT \i PD434004 4 M -BIT CMOS FAST STATIC RAM 1 M-W ORD BY 4 BITS Description The /¿PD434004 is a h ig h speed, low p o w e r , 4 194 304 b its 1 048 576 w o r d s by 4 bits C M O S s ta tic RAM T h e /¿PD434004 is packed in 32-pin p la s tic SOJ.

static ram 512K

Abstract: IC-299B
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¡1 PD434008 4M-BIT CMOS FAST STATIC RAM 512K-WORD BY 8 BITS Description The /PD434008 is a high speed, low power, 4 194 304 bits 524 288 words by 8 bits CMOS static RAM. The //PD434008 is packed in 36-pin plastic SOJ.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD434004 4M-BIT CMOS FAST STATIC RAM 1M-WORD BY 4 BITS D escrip tio n The //PD434004 is a high speed, low power, 4 194 304 bits 1 048 576 w ords by 4 bits CMOS static RAM. The /¿PD434004 is packed in 32-pin plastic SOJ.

Contextual Info: five 10 1992 NEC PD434000 524,288 X 8-Bit Static CMOS RAM NEC Electronics Inc. Preliminary Description T he ^PD434000 is a 524,288-w ord by 8-bit static RAM fab ricated with advanced silicon-gate technology.

Contextual Info: PRELIM IN A R Y DATA SHEET MOS INTEGRATED CIRCUIT ELECTRON DEVICE /¿PD434004 4 M BIT CM O S FAST STATIC RAM D E S C R IP T IO N The /iP D 434004 is a high-speed, 1048576 words by 4 -bit CMOS static RAM fabricated w ith short channel silicon-gate CMOS process. The ¿ PD434004 is a very high speed device using both an advanced CMOS process and excellent c ircu itry

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT / PD434001 4M -BIT CMOS FAST STATIC RAM 4M-W ORD BY 1-BIT Description The ¿¡PD434001 is a high speed, low pow er, 4 ,1 9 4 ,3 0 4 bits (4 ,1 9 4 ,3 0 4 w o rd s by 1 bit C M O S s ta tic RAM. The ¿¡PD434001 is packed in 32-pin p la s tic SOJ.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD434008 4M-BIT CMOS FAST STATIC RAM 512K-WORD BY 8 BITS Description The f<PD434008 is a high speed, low power, 4 194 304 bits 524 288 words by 8 bits CM OS static RAM. The /¿PD434008 is packed in 36-pin plastic SOJ.

PD434001

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD434001 4M-BIT CMOS FAST STATIC RAM 4M-WORD BY 1-BIT Description The µ PD434001 is a high speed, low power, 4,194,304 bits 4,194,304 words by 1 bit CMOS static RAM. The µ PD434001 is packed in 32-pin plastic SOJ. Features

IC-2996

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD434004 4M-BIT CMOS FAST STATIC RAM 1M-WORD BY 4 BITS D e s c rip tio n The /¿PD434004 is a high speed, lo w pow er, 4 194 304 b its 1 048 576 w o rd s by 4 bits CM OS sta tic RAM. The ^PD434004 is packed in 32-pin p la stic SOJ.

DS1304

Abstract: aem r10k SMP3316-103M ds1303 renco 4r7 SMTDR54-120M smtdr75 SMTDR75-680K SMTDR75-221K MLF1608A1R0KT
Contextual Info: Bourns P/N CI100505-1N0D CI100505-1N2D CI100505-1N5D CI100505-1N8D CI100505-2N2D CI100505-2N7D CI100505-3N3D CI100505-3N9D CI100505-4N7D CI100505-5N6D CI100505-6N8J CI100505-8N2J CI100505-10NJ CI100505-12NJ CI100505-15NJ CI100505-18NJ CI100505-22NJ CI100505-27NJ

0829A

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT PD434004A 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The ^¡PD434004A is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT PD434004AL 4M -BIT CMOS FAST SRAM 1M-W ORD BY 4-BIT Description The ^¡PD434004AL is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

PD73-103K

Abstract: 823k PD104-472M PD54-473K 683K PD104-273K PD75-473K PD104 PD105 PD43-152M
Contextual Info: PD Series SMT Power Choke Core * Test Measurement Frequency Values < 10µH tested @ 7.96MHz; Values ≥10uH @ 0.100 MHz 1.0 KHz Mechanical Configuration Units designed for Surface Mounting Terminals Solder Coated with SN63 solder Core Construction High Resistivity Ferrite

PD23C64020

Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
Contextual Info: IC Memory CD-ROM IC Memory CD-ROM X13769XJ2V0CD00 04-1 IC Memory Dynamic RAM • Synchronous DRAM: SDR Single Data Rate , 256M bits (x4 bits organization) Density (bits) Organization (words × bits × banks) Part number 256M★ 16M×4×4 µ PD45256441 Speed

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

D434004

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT PD434004A 4M -BIT CMOS FAST SRAM 1M-W ORD BY 4-BIT Description The /¿PD434004A is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT /¿PD434016AL 4M -BIT CMOS FAST SRAM 256K-W ORD BY 16-BIT Description The /¿PD434016AL is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT U P D 4 3 4 0 1 6 A 4M -BIT CMOS FAST SRAM 256K-W ORD BY 16-BIT Description The ,PD434016A is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT PD434001 AL 4M -BIT CMOS FAST SRAM 4M -W ORD BY 1-BIT Description The ,PD434001 AL is a high speed, low power, 4,194,304 bits 4,194,304 words by 1 bit CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT U P D 4 3 4 0 1 6 A 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The ,PD434016A is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.