PD23C16000 Search Results

PP-24

Contextual Info: データ・シート MOS集積回路 MOS Integrated Circuit PD23C16000BL 16 Mビット マスク・プログラマブルROM 2 Mワードx8ビット（バイト・モード）／1 Mワード×16ビット（ワード・モード） μ PD23C16000BLは，16,777,216ビットのマスク・プログラマブル・リード・オンリー・メモリです。ワード構

Contextual Info: jL /X V * V PD23C16000 16,777,216-Bit Mask-Programmable CMOS ROM NEC Electronics Inc. Description Pin Configuration The ^PD23C16000 is a 16,777,216-bit ROM fabricated with CMOS silicon-gate technology. The device is static in operation and has three-state outputs and fully

23c16000w

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1 M-WORD BY 16-BIT (WORD MODE) Description The /PD23C16000W is a 16,777,216 bits m ask-program m able ROM. The w ord organization is selectable (BYTE mode: 2,097,152 w ords by 8 bits, W ORD mode: 1,048,576 words by 16 bits).

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ju P D 2 3 C 1 6 0 0 0 L 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE / 1M-WORD BY 16-BIT(WORD MODE) Description The ^¡PD23C16000L is a 16,777,216 bits mask-programm able ROM. The word organization is selectable (BYTE

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE / 1M-WORD BY 16-BIT (WORD MODE) Description The ^¡PD23C16000L is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 2,097,152 words by 8 bits, WORD mode : 1,048,576 words by 16 bits).

PD23C64020

Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
Contextual Info: IC Memory CD-ROM IC Memory CD-ROM X13769XJ2V0CD00 04-1 IC Memory Dynamic RAM • Synchronous DRAM: SDR Single Data Rate , 256M bits (x4 bits organization) Density (bits) Organization (words × bits × banks) Part number 256M★ 16M×4×4 µ PD45256441 Speed

Contextual Info: PD23C16000 16,777,216-Bit Mask-Programmable CMOS ROM NEC Electronics Inc. Pin Configuration Description T h e /JP D 23C 16000 is a w ith C M O S silic o n -g a te in o p e ra tio n an d has T T L -c o m p a tib le inputs 16,777,216-bit R O M fa b ric a te d

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1M-WORD BY 16-BIT (WORD MODE) Description The ¿¡PD23C16000W is a 16,777,216 bits m ask-program m able ROM. The w ord organization is selectable (BYTE mode: 2,097,152 w ords by 8 bits, W ORD mode: 1,048,576 w ords by 16 bits).

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1 M-WORD BY 16-BIT (WORD MODE) Description The ¿¡PD23C16000W is a 16,777,216 bits m ask-program m able ROM. The w ord organization is selectable (BYTE mode: 2,097,152 w ords by 8 bits, W ORD mode: 1,048,576 w ords by 16 bits).

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT / P D 2 3 C 1 6 0 0 0 L W 16M -BIT M ASK -PR O G R A M M A B LE ROM 2M -W O R D BY 8-B IT (BYTE M O D E /1M -W O RD BY 16-BIT (W O RD MODE) Description The ¿¡PD23C16000LWÌS a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUII / P D 2 3 C 1 6 0 0 0 A L 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT(BYTE MODE / 1M-WORD BY 16-BIT(WORD MODE) Description The ^¡PD23C16000AL is a 16,777,216 bits mask-programm able ROM. The word organization is selectable (BYTE

Contextual Info: DATA SH EET MOS INTEGRATED CIRCUIT ¿iPD2 3 C 1 6 0 0 0 LW 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1 M-WORD BY 16-BIT (WORD MODE) Description The /¿PD23C16000LW is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE

NEC 2705

Abstract: PP-24
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

uPC2581

Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C16000LW 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1M-WORD BY 16-BIT (WORD MODE) Description The µPD23C16000LW is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 2,097,152 words by 8 bits, WORD mode: 1,048,576 words by 16 bits).

Contextual Info: N E C ELECTRONICS INC 3flE D SEC b427S2S □ G 3 2 4 c]fl Ö PD23C16000 16,777,216-Bit Mask-Programmable CMOS ROM N EC E lectronics Inc. T D escription Pin Configuration The /PD23C16000 is a 16,777,216-bit ROM fabricated with CM OS silicon-gate technology. The device is static

d23c16000

Abstract: D23C1600
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿PD23C16000L 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE / 1 M-WORD BY 16-BIT(WORD MODE) Description The /¿PD23C16000L is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT / P D 2 3 C 1 6 0 0 0 L W 16M -BIT M ASK -PR O G R A M M A B LE ROM 2M -W O R D BY 8-B IT (BYTE M O D E /1M -W O RD BY 16-BIT (W ORD MODE) Description The ¿¡PD23C16000LWÌS a 16,777,216 bits m ask-program m able ROM. The word organization is selectable (BYTE

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258