PD23C1000EA Search Results

Contextual Info: //PD 23C 10OOE A 131,072 x 8-B IT MASK-PROGRAMMABLE c m o s ro m N E C Electronics Inc. Pin Configuration Description T h e /L/PD23C1000EA is a 131,0 72-w ord by 8-b it static RO M fabricated with C M O S silicon-gate technology. Designed to operate from a single + 5 -v o lt power

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

UPD23C1000E

Abstract: UPD23C1000
Contextual Info: SEC PD23C1000EA 131,072 x 8-Bit Mask-Programmable CMOS ROM NEC Electronics Inc. Description Pin Configuration The jiPD23Cl000EA is a 131,072-word by 8-bit static ROM fabricated with CMOS silicon-gate technology. Designed to operate from a single + 5-volt power supply,

UPD23C100

Contextual Info: PD23C1000EA 131,072 X 8-Bit Mask-Programmable CMOS ROM NEC Electronics Inc. Description Pin Configuration The /PD23C1000EA is a 131,072-word by 8-bit static ROM fabricated with CMOS silicon-gate technology. Designed to operate from a single + 5-volt power supply,