PCN 8.5 Search Results

20MHZ

Abstract: 49C465 IDT49C465 IDT49C465A error correction code mlc L9908
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: L9908-04 Product Affected: 49C465/A DATE: August 15, 1999 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Mark Back Mark Manufacturing Location Affected:

cemos

Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN DATE: January 29, 2000 PCN #: M0002-02 Product Affected: 79RC32V364-100 DA 79RC32V364-133 DA Manufacturing Location Affected: N/A MEANS OF DISTINGUISHING CHANGED DEVICES:

sp12a

Abstract: XPC860TZP50B5 XPC860MHZP66C1 XPC860ENZP50C1 XPC860MHZP50C1 xpc860 XPC860DECZP50C1 KXPC860TZP50B3 XPC860CZP50C1 XPC860SRCZP50C1
Contextual Info: Freescale Semiconductor, Inc. Semiconductor Products Sector Networking and Computing Systems Group Networking and Communications System Division PCN: Transition to 860/855 rev D4 Effective Date: 05-Nov-00 Freescale Semiconductor, Inc. DESCRIPTION AND PURPOSE

Contextual Info: PolySwitch PTC Devices PRODUCT: VLR170UF DOCUMENT: SCD25397 PCN: A46524 REV LETTER: D REV DATE: MAY 14, 2011 PAGE NO.: 1 OF 1 Overcurrent Protection Device Specification Status: Released Maximum Electrical Rating Operating Voltage: 12Vdc Interrupt Current: 100A

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

CBR1-D010S

Abstract: CBR1-D020S CBR1-D040S CBR1-D060S CBR1-D080S CBR1-D100S CBR1F-D020S CBR1F-D040S CBR1F-D060S CBR1U-D010S
Contextual Info: PCN #: 101 Notification Date: 12 November 2001 145 Adams Avenue Hauppauge, New York 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Email: processchange@centralsemi.com www.centralsemi.com/processchange Process Change Notice Parts Affected: All Bridge Rectifiers in the SMDIP package.

B37940-K5220-J62

Abstract: siemens rs 1016 B37940K5220J62 B54102 mmic-amplifier CGY120 B54102-A1471-J60 B37490-K5120-J62 0805CS-220XMBC MMIC marking CODE c4
Contextual Info: SIEMENS GaAs MMIC CGY 120 Datasheet * Monolithic microwave IC MMIC-Amplifier for mobile communication * Variable gain amplifier for GSM/PCN applications * Gain Control range over 50dB * 50Q input and output matched * Low power consumption 'Operating voltage range: 2.7 to 6 V

BU-75K

Abstract: VLR170F
Contextual Info: PolySwitch PTC Devices 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com PRODUCT: VLR170F DOCUMENT: SCD26025 PCN: D91020 REV LETTER: B REV DATE: JUNE 25, 2007 PAGE NO.: 1 OF 1 Overcurrent Protection Device Raychem Circuit Protection Products

M39016/6

Abstract: m83536 V23084 m39016 M39016/7 M83536/9 w57 transistor M39016/13 V23136 tyco relay HFW Relay
Contextual Info: Relay & Switches Shortform PCB POWER RELAYS Relay Type PE RE SNR V23092 PCN OJ 4 PLACES 1.3 DIA 1.25-1.27 ø0.7+0.1 ø1+0.1 1.25-1.27 1.05 1.71 7.6±0.1 2.54±0.1 12.7±0.1 RoHS Status Compliant Compliant Compliant Compliant Compliant Contacts Configuration

Contextual Info: PolySwitch PTC Devices PRODUCT: VLR170F DOCUMENT: SCD26025 PCN: D91020 REV LETTER: C REV DATE: MAY 11, 2011 PAGE NO.: 1 OF 1 Overcurrent Protection Device 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com Specification Status: Released

BU-75K

Contextual Info: Tyco / Electronics PolySwitch PTC Devices Raychem Circuit Protection 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 Fax: 800-227-4866 PRODUCT: VTP170XSDF DOCUMENT: SCD 26179 PCN: A45828 REV LETTER: B REV DATE: JUNE 16, 2005 PAGE NO.: 1 OF 1

vam 1201

Abstract: vam77 mmic amplifier marking code 414 MSA-0711
Contextual Info: NE W! Surface Mount Monolithic Amplifier VAM-77 50Ω, Broadband, DC to 6 GHz Features • low device voltage, 3.3V typ. • gain flatness, ±.55 dB typ. to 2 GHz • equivalent to MSA-0711 Applications • cellular • PCN & instrumentation CASE STYLE: MMM168

siemens inductor

Contextual Info: SIEMENS CGY184 GaAs MMIC Preliminary Data • • • • • • Power amplifier for PCN applications 2.5 W 34dBrri output power at 3.5 V Overall power added efficiency 43 % Fully integrated 4 stage amplifier Power ramp control Input matched to 50 ohms, simple output match

B37940-K5220-J62

Abstract: B54102 Siemens MMIC 0805CS-220XMBC siemens rs 1016 B37940K5220J62 SIEMENS gaas 0805CS-270XMBC Q62702-G44 marking code 02 mmic
Contextual Info: SIEMENS C G Y120 GaAs MMIC Datasheet * M onolithic microwave IC MMIC-Am plifier for mobile communication * Variable gain am plifier for GSM/PCN applications * Gain Control range over 50dB * 5 0 i l input and output matched * Low power consumption •O p eratin g voltage range: 2.7 to 6 V

Contextual Info: MERRIHAC INDUSTRIES INC bDDMbaT G D O nTB 3 MbE D innii / Merrimac -o 7-0 7 DMH-4R series LOW DISTORTION DOUBLE BALANCED MIXER Cellular and PCN Applications Wide Bandwidth, Half Relay €-• 10 MHz to 2500 MHz RF/LO Frequency Range • + 7 dBm to +17 dBm LO Drive Range

tdma noise reduce

Abstract: LCC8 CMM1530-LC CMM1530-LC-00S0 CMM1530-LC-00ST CMM1530-LC-00T0 CMM1530-LC-00TT DCS1800 IS-136 PB-CMM1530-LC-00S0
Contextual Info: CMM1530-LC Advanced Product Information May 1999 1 of 4 1.85 to 1.91 GHz 3.0V, 30 dBm, PCS/PCN Plastic LCC-8 Power Amplifier Features ❏ Operation as Low as 3.0V ❏ 38% Linear Power Added Efficiency ❏ +30 dBm Output Power (IS-136 TDMA Mode) ❏ +28.5 dBm Output Power (IS-98 CDMA Mode)

CP0603A0836CL

Abstract: CP0603A0942ML cp0603a0942al CP0603A1880BL CP0603AxxxxGL CP0603A1441HL CP0603A1441CL cp0603a1960GL CP0603A0902cl pdc 140
Contextual Info: Thin-Film Directional Couplers CP0603 High Directivity LGA Termination GENERAL DESCRIPTION ITF Integrated Thin-Film TECHNOLOGY DIMENSIONS: (Bottom View) The ITF LGA Coupler is based on thin-film multilayer technology. The technology provides a miniature part with excellent high frequency

directional coupler chip 8 GHz

Abstract: Coupler SMD Coupler "SMD" 3GHz CP0603 CP0805
Contextual Info: Thin-Film Directional Couplers CP0603 SMD Type GENERAL DESCRIPTION ITF Integrated Thin-Film TECHNOLOGY DIMENSIONS: millimeters (inches) B The ITF SMD Coupler is based on thin-film multilayer technology. The technology provides a miniature part with excellent high frequency

Contextual Info: Thin-Film Directional Couplers CP0805 SMD Type GENERAL DESCRIPTION ITF Integrated Thin-Film TECHNOLOGY DIMENSIONS: (Top View) The ITF SMD Coupler is based on thin-film multilayer technology. The technology provides a miniature part with excellent high frequency

C213

Abstract: C231 C435 PG1AB
Contextual Info: In-System Programmable Analog Circuit October 2001 Data Sheet Features Functional Block Diagram • In-System Programmable ISP Analog • • • • • • Instrument Amplifier Gain Stage Precision Active Filtering (10kHz to 75kHz) Continuous-Time Fifth Order Low Pass Topology

AC30

Abstract: AG30 PT80 G-218
Contextual Info: ispLSI 8840 Features Functional Block Diagram • SuperBIG HIGH DENSITY IN-SYSTEM PROGRAMMABLE LOGIC — 5V Power Supply — 45,000 PLD Gates/840 Macrocells — Up to 312 I/O Pins Supporting 3.3V/5V I/O — 1152 Registers — High-Speed Global and Big Fast Megablock BFM

PT80

Contextual Info: ispLSI 8840V Features Functional Block Diagram • SuperBIG HIGH DENSITY IN-SYSTEM PROGRAMMABLE LOGIC — 3.3V Power Supply — 45,000 PLD Gates/840 Macrocells — 192-312 I/O Pins Supporting 3.3V/2.5V I/O — 1152 Registers — High-Speed Global and Big Fast Megablock BFM

AC30

Abstract: AD29 AG29 AG30 AK19 AJ-31 AJ22
Contextual Info: ispLSI 3448 Functional Block Diagram J3 J2 J1 . J0 Output Routing Pool ORP H3 Output Routing Pool (ORP) H1 H0 G3 D Q D Q K1 G2 OR Array D Q K2 G1 K3 D Q D Q OR Array Twin GLB G0 D Q . • ispLSI FEATURES: — 5V In-System Programmable (ISP ) Using Lattice

2128VE

Abstract: 2128VL
Contextual Info: ispLSI 2128VL Functional Block Diagram* Output Routing Pool ORP • 2.5V LOW VOLTAGE 2128 ARCHITECTURE — Interfaces with Standard 3.3V Devices (Inputs and I/Os are 3.3V Tolerant) — 125 mA Typical Active Current • HIGH PERFORMANCE E2CMOS® TECHNOLOGY