PCN 8.5 Search Results

20MHZ

Abstract: 49C465 IDT49C465 IDT49C465A error correction code mlc L9908
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: L9908-04 Product Affected: 49C465/A DATE: August 15, 1999 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Mark Back Mark Manufacturing Location Affected:

Contextual Info: www.niccomp.com/pcn | Technical Support: tpmg@niccomp.com November 9, 2010 SUB: NIC Components PCN & EOL Notifications RE: EOL Notification Product Type: NIC Series: Radial Leaded Film Capacitors NEM Series THE FOLLOWING IS NOTICE THAT THE NEM SERIES IS BEING DISCONTINUED.

SP331

Abstract: SP331CT-L SP331ET-L
Contextual Info: PRODUCT CHANGE NOTICE PCN PART NUMBER(S): PCN No.: 10-0201-03 Refer to Attachment A (SP331) DATE: February 22, 2010 PART DESCRIPTION: See www.exar.com LEVEL OF CHANGE: [X] Level I, Customer Approval. [ ] Level II, Customer Information. PRODUCT ATTRIBUTE AFFECTED:

cemos

Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN DATE: January 29, 2000 PCN #: M0002-02 Product Affected: 79RC32V364-100 DA 79RC32V364-133 DA Manufacturing Location Affected: N/A MEANS OF DISTINGUISHING CHANGED DEVICES:

APM4820

Abstract: apm4820k VISHAY SUC50N03 apm4820kcg SUC40N03-18L
Contextual Info: PRODUCT CHANGE NOTICE PCN PART NUMBER(S): PCN No.: 10-0224-03 SP7662ER-L, SP7662ER-L/TR DATE: March 2, 2010 PART DESCRIPTION: See WWW.EXAR.COM LEVEL OF CHANGE: [X] Level I, Customer Approval. [ ] Level II, Customer Information. PRODUCT ATTRIBUTE AFFECTED:

A09010

Abstract: 06309 PCS18
Contextual Info: PCS/PCN Panel Antennas Based on new technology, the perform ance of PCS 1800/1900 Panel Antennas enhance revenues In modern PCS/PCN applications by decreasing interference and reducing call drop-outs. M eet your future system requirem ents m ore e con om i­

B272

Abstract: T100 T176
Contextual Info: ispGDX Device Datasheet June 2010 All Devices Discontinued! Product Change Notification PCN #09-10 has been issued to discontinue all devices in this data sheet. The original datasheet pages have not been modified and do not reflect those changes. Please refer to the table below for reference PCN and current product status.

MQE9

Abstract: 74674 HITEC 623 Hitachi DSA002752 GSM53 Nippon capacitors
Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

Hitachi DSA002743

Abstract: Nippon capacitors
Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

HD155121F

Abstract: Common PCN Handset Specification Phase 74674 GSM LNA BFP420 GSM ic gsm transceiver transceiver gsm MA 68698 pcn 8.5
Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems HITACHI ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

ASB25

Abstract: vhdl code scrambler vhdl code for scrambler descrambler diode a1s 8B10B ORT4622 PT10 PT11 STS-48 ASB17
Contextual Info: Discontinued Product PCN#03-08 . Contact Rochester Electronics for Availability. Data Sheet July 2009 ORCA ORT4622 Field-Programmable System Chip (FPSC) Four-Channel x 622 Mbits/s Backplane Transceiver

sp12a

Abstract: XPC860TZP50B5 XPC860MHZP66C1 XPC860ENZP50C1 XPC860MHZP50C1 xpc860 XPC860DECZP50C1 KXPC860TZP50B3 XPC860CZP50C1 XPC860SRCZP50C1
Contextual Info: Freescale Semiconductor, Inc. Semiconductor Products Sector Networking and Computing Systems Group Networking and Communications System Division PCN: Transition to 860/855 rev D4 Effective Date: 05-Nov-00 Freescale Semiconductor, Inc. DESCRIPTION AND PURPOSE

XPC823ZT66B2T

Abstract: XPC823 XPC823ZT75B2T XPC823ZT81B2T KXPC823ZT81B2T MPC823 W90913 XPC823ZT
Contextual Info: M Semiconductor Products Sector Networking and Computing Systems Group Networking and Communications System Division PCN: MPC823 XC Qualification in TSMC/WaferTech Motorola is pleased to announce an additional wafer fabrication facility, TSMC/WaferTech, for

79RV4700

Abstract: m990 79RV4700-XXXDP
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN DATE: August 15, 1999 MEANS OF DISTINGUISHING CHANGED DEVICES: 79RV4700-XXGH/-XXXGH Product Mark 79RV4700-XXXDP Back Mark Manufacturing Location Affected:

Contextual Info: PolySwitch PTC Devices PRODUCT: VLR170UF DOCUMENT: SCD25397 PCN: A46524 REV LETTER: D REV DATE: MAY 14, 2011 PAGE NO.: 1 OF 1 Overcurrent Protection Device Specification Status: Released Maximum Electrical Rating Operating Voltage: 12Vdc Interrupt Current: 100A

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF281 Rev. 6, 10/2008 RF Power Field Effect Transistors MRF281SR1 MRF281ZR1 Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for

XPC850DEZT80BU

Abstract: D677 XPC850 XPC850DEZT50BU XPC850DEZT66BU XPC850SRZT50BU XPC850ZT50BU XPC850ZT66BU XPC850ZT80BU SPB32
Contextual Info: Freescale Semiconductor, Inc. Semiconductor Products Sector Networking and Computing Systems Group Networking and Communications System Division PCN: XPC850 XC Qualification in MOS12 Freescale Semiconductor, Inc. Motorola is pleased to announce an additional wafer fabrication facility, MOS12, for the XPC850

3734 Japan

Abstract: PCN13232
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF281 Rev. 6, 10/2008 RF Power Field Effect Transistors MRF281SR1 MRF281ZR1 Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for

d040

Abstract: 81-185 CBR1-D040 CBR1F-D020 CBR1F-D040 CBR1F-D060 CBR1F-D080 CBR1F-D100 CBR1-D010 CBR1-D020
Contextual Info: PCN #: 102 Notification Date: 12 November 2001 145 Adams Avenue Hauppauge, New York 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Email: processchange@centralsemi.com www.centralsemi.com/processchange Process Change Notice Parts Affected: All Bridge Rectifiers in the DIP package.

369A-10

Abstract: MJD32 MOTOROLA motorola MOSFET 935 NIPPON CAPACITORS mrf284 power MJD31 MJD32 MRF284 MRF284S B6C1
Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from

BU-75K

Abstract: VTP170XSF
Contextual Info: PolySwitch PTC Devices 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com PRODUCT: VTP170XSF DOCUMENT: SCD 26037 PCN: RF0222 REV LETTER: D REV DATE: MARCH 7, 2008 PAGE NO.: 1 OF 1 Overcurrent Protection Device

Contextual Info: PRODUCT: RGEF500-1 PolySwitch PTC Devices 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com DOCUMENT: SCD 26271 PCN: RF0070 REV LETTER: B REV DATE: JULY 20, 2007 PAGE NO.: 1 OF 1 Overcurrent Protection Device

741 datasheet motorola

Abstract: MRF281ZR1 motorola j117 200S MRF281SR1 J117 MOSFET mosfet 4496 Ni200 NI-200Z
Contextual Info: MOTOROLA Order this document by MRF281/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station