PC662 Search Results

BT477KPJ80

Contextual Info: - 286 - * fr'^-^8 £•, H D - A => 's>*-9 m « H PC664GS CXDU71M MC10322 B ro o ktree V —— MOTOROLA TFS +25' C TFS 40MSPS s in 40MSPS min BU74KPJ85, 75 Bt477KPJ80, 66 Bt47 7 KPJ5 0 ,35 Bro o ktree Brooktree U PC662GH ^ n^9£ TFS TFS TFS TFS * * * 811"- H

BT477KPJ80

Abstract: BT475
Contextual Info: - 286 - * f r ' ^ - ^ 8 £• , H D - A => 's>*-9 m « H PC664GS CXDU71M MC10322 B ro o ktree V —— MOTOROLA TFS +25' C TFS 40MSPS s in 40MSPS min BU74KPJ85, 75 Bt477KPJ80, 66 Bt47 7 KPJ5 0 ,35 Bro o ktree Brooktree U PC662GH ^ n^9£ TFS TFS TFS TFS * * * 811"- H

uPC662

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED C IR C U IT B E C IR O N DEVICE u 3 CHANNEL D/A CONVERTER FOR VIDEO PROCESSING DESCRIPTION PC662 is a video 8-bit 3-channel digital analog converter having the following features: High speed and high precision bipolar processing technology for excellent performance of 35 MHz, ±0.5 LSB M AX. ; three channels of identical digital

BT477KPJ80

Contextual Info: - * 286 - f r '^ - ^ 8 m £•, H D - A => 's>*-9 « H PC664GS CXDU71M MC10322 B ro o ktree V —— MOTOROLA TFS +25' C TFS 40MSPS s in 40MSPS min BU74KPJ85, 75 Bt477KPJ80, 66 Bt47 7 KPJ5 0 ,35 Bro o ktree Brooktree U PC662GH ^ n^9£ TFS TFS TFS TFS * * * 8 1 1 "- H

PC66-222-920

Abstract: v2200 TSOP44
Contextual Info: 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module HYS64/72V2200GU-8/-10 HYS64/72V4220GU-8/-10 168 pin unbuffered DIMM Modules • 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications

BT477KPJ80

Contextual Info: - 286 * - f r '^ - ^ 8 m £•, H D - A => 's > * - 9 « H PC664GS CXDU71M MC10322 B r o o k tr e e V —— MOTOROLA TFS +25' C TFS 40MSPS s i n 40MSPS min B U 7 4 K P J8 5 , 75 Bt4 7 7 K P J8 0 , 66 Bt4 7 7 K P J5 0 ,35 B r o o k tr e e B r o o k tr e e

Contextual Info: SIEMENS HYB39S64400/800/160AT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: Multiple Burst Operation -8 -8B -10 Units fCKmax. 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns Automatic Command and Read with Single Write Controlled

Contextual Info: 3.3V 4M x 64-Bit 1 BANK SDRAM Module HYS64V4300GU PC66 & PC100 168 pin unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • One bank 4M x 64 organisation • Optimized for byte-write non-parity and ECC applications

D1233

Contextual Info: SIEMENS 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module HYS 64/72V8200GU HYS 64/72V16220GU 168 pin unbuffered DIMM Modules • 168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications

Contextual Info: SIEMENS 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module HYS64/72V2200GU-8/-10 HYS64/72V4220GU-8/-10 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-ln-Line SDRAM Modules

Contextual Info: SIEMENS 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module HYS64 72 V4200GU-8/-10 HYS64(72)V8220GU-8/-10 PC66 & PC100 168 pin unbuffered DIMM Modules Prelim inary Information • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules

Contextual Info: SIEMENS 256 MBit Synchronous DRAM HYB 39S256400/800/160T Preliminary Information • High Performance: Multiple Burst Read with Single W rite Operation -8 -8B -10 Units 125 100 100 MHz fCK3 8 10 10 ns Data M ask for Read/W rite control fAC3 6 6 7 ns Data M ask for byte control

PC100-222-620

Contextual Info: 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module HYS64 72 V4200GCU-8/-10 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module HYS64(72)V8220GCU-8/-10 PC66 & PC100 168 pin unbuffered COB-DIMM Modules Preliminary Information • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules

Contextual Info: 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module HYS64 72 V4200GU HYS64(72)V8220GU PC66 & PC100 168 pin unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • One bank 4M x 64, 4Mx72 and two bank 8M x 64, 8M x 72 organisation

P-TSOPII-54

Abstract: 39s64160at-8
Contextual Info: HYB39S64400/800/160AT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: -8 -8B -10 Units fCKmax. 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns tCK2 10 12 15 ns tAC2 6 7 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature

TSOP-54

Contextual Info: 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module HYS 64/72V8200GU HYS 64/72V16220GU 168 pin unbuffered DIMM Modules • 168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications

Contextual Info: 3.3V 8M x 64/72-Bit 1 BANK SDRAM Module 3.3V 16M x 64/72-Bit 2 BANK SDRAM Module HYS64/72V8200GU HYS64/72V8300GU HYS64/72V16220GU 168 pin unbuffered DIMM Modules • 168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications

Contextual Info: SIEMENS HYB39S64400/800/160AT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: Multiple Burst Operation -8 -8B -10 Units fCKmax. 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns tCK2 10 12 15 ns tAC2 6 7 8 ns Automatic Command and Read

BCM5787

Abstract: SB460 ATI SB460 PC638 PC618 PC87541 X235 C556B IOPLLVDD18 PC627
Contextual Info: 5 4 3 NR3a CPU 2 1 01 CPU Thermal Sensor Yonah / Merom BlOCK DIAGRAM NB Thermal Sensor u-FCPGA 478PIN D FSB D Battery 667 MHZ Dual channel Memory DDRII 667 SO-DIMM STANDARD ON BOARD 256MB SO-DIMM REVERSE PRIMARY HDD DC In DDR II CHANNEL A CRT DDC2B NB DDR II CHANNEL B

Contextual Info: SIEMENS 3.3V 8M x 64/72-Bit 1 BANK SDRAM Module 3.3V 16M x 64/72-Bit 2 BANK SDRAM Module HYS64/72V8200GU-8/-10 HYS64/72V16220GU-8/-10 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin PC100-compatible unbuffered 8 Byte Dual-ln-Line SDRAM Modules

Contextual Info: HYB39S256400/800/160T 256MBit Synchronous DRAM SIEMENS 256 MBit Synchronous DRAM Preliminary Information • High Performance: Multiple Burst Operation -8 -8B -10 Units fCK 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns Automatic Command and Read with Single Write

Contextual Info: 3.3V 4M x 64-Bit 1 BANK SDRAM Module HYS64V4300GU PC66 & PC100 168 pin unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-ln-Line SDRAM Modules for PC main memory applications • One bank 4M x 64 organisation • Optimized for byte-write non-parity and ECC applications

PC66-222-620

Contextual Info: SIEMENS 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module HYS64 72 V4200GU HYS64(72)V8220GU PC66 & PC100 168 pin unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications

CAY smd marking code

Abstract: smd marking T22 cbx smd code smd CAY 39S256800T-8 SMD MARKING T20 SMD MARKING T5 P-TSOPII-54 PC100-222-620 PC100-323-620
Contextual Info: HYB 39S256400/800/160T 256 MBit Synchronous DRAM Preliminary Information • High Performance: • • • • -8 -8B -10 Units fCK 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns tCK2 10 12 15 ns tAC2 6 7 8 ns • Multiple Burst Read with Single Write Operation