PB10S Search Results

Contextual Info: DIODE 10A/100V to 600V PB10S1,2,4,6 OUTLINE DRAWING FEATURES * Isolated Base * 4 Diodes Single Phase Bridge Connected * High Surge Capability TYPICAL APPLICATIONS * Rectified For General Use Maximum Ratings Voltage Rating Repetitive Peak Reverse Voltage Non repetitive Peak Reverse Voltage

Contextual Info: DIMENSIONS PB01S PB03S PB06S PB10S Approvals: PANEL CUT-OUT ATTENUATION IN 50 OHM-50 OHM CIRCUIT ACCORDING CISPR PB01S 1 AMP PB03S (3 AMP) Circuit A i -• — c ' | 100K FEATURES • G eneral purpose filter with

Contextual Info: DIODE Type：PB10S1,2,4,6 •OUTLINE DRAWING 構造 ：単相ブリッジ型シリコン整流器 Construction: Single Phase Bridge Rectifier 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating Approx Net weight:8.5g

Contextual Info: .20 3.3 (5) (22.4) Approvals: 1.42 (36) 1.97±.04 .83 (9) (21) (40) 1.57 1.20 (40) (29) (30.5) (3.5 ) BACK OF PANEL 20 NM Attenuation (dB) Attenuation (dB) NM 40 CM 60 80 40 CM 60 80 100K 1M Frequency (Hz) 10M 50M 100K 1M Frequency (Hz) PB06S (6 AMP) 50M

PB10S1

Contextual Info: DIODE Type:PB10S1,2,4,6 OUTLINE DRAWING SINGLE – PHASE SILICON BRIDGE RECTIFIER FEATURES * Surge Overload Rating : 150 Amperes Peak * Low Forward Voltage Drop * Mounting Position : Any Maximum Ratings Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

PB102F

Abstract: mdc5fa2 MA768 MA769 MB-4-01 MB-4-02 MB-4-04 MB-4-06 MB-4-08 MD10F
Contextual Info: - 134- -X m £ tt « Pr s m Vr s m m MA768 MA769 M B —4—01 MB-4-02 MB-4-04 töT M B —4-06 M B —4—08 MD4F MD6F MD8F * ' y * ' ) -y y MD1 0 F MD20SH05K MD36SH05K MD50SH05K MD-100X08C MDA65SN1K MDC5FA2 MDC8FX2 MDC12FA2 MDC16FX2 MDC20FA2 MDC30FX2 OR6JXZ33A

mdc12fa2

Abstract: 1805L PB102F PB112F mdc5fa2 MA768 MA769 MB-4-01 MB-4-02 MB-4-04
Contextual Info: - 134 - -X m £ tt « Pr s m Vr s m m MA768 MA769 M B —4—01 MB-4-02 MB-4-04 M B —4-06 M B —4—08 MD4F MD6F MD8F MD1 0 F MD20SH05K MD36SH05K MD50SH05K MD-100X08C MDA65SN1K MDC5FA2 MDC8FX2 MDC12FA2 MDC16FX2 MDC20FA2 MDC30FX2 OR6JXZ33A OR6LXZ33A OR6QXZ33A

mdc5fa2

Abstract: MA768 MA769 MB-4-01 MB-4-02 MB-4-04 MB-4-06 MB-4-08 MD10F
Contextual Info: - 134 - -X m £ tt « Pr s m Vr s m m MA768 MA769 M B —4—01 MB-4-02 MB-4-04 M B —4-06 M B —4—08 MD4F MD6F MD8F MD1 0 F MD20SH05K MD36SH05K MD50SH05K MD-100X08C MDA65SN1K MDC5FA2 MDC8FX2 MDC12FA2 MDC16FX2 MDC20FA2 MDC30FX2 OR6JXZ33A OR6LXZ33A OR6QXZ33A

PB10S6

Contextual Info: Type：PB10S1,2,4,6 DIODE •OUTLINE DRAWING 構造 ：単相ブリッジ型シリコン整流器 Construction: Single Phase Bridge Rectifier 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating Approx Net weight:8.5g

BR16 switch transistors

Abstract: Lucent wifi PB11D R2C15 PTC 8750 R5C13 5s805 W847 R12G5
Contextual Info: microelectronics Preliminary Data Sheet November 1997 group L u c e n t T t o c h n û lo a ie s Bell Late Innovations ORG&Q R3Cxx 5 V and OR3Txxx (3.3 V) Series Field-Programmable Gale Arrays Features • High-performance, cost-effective, 0.35 nm 4-level

systron Donner 410

Abstract: MIL-STD-750E Ultrasonic Atomizing Transducer systron donner accelerometer substitute diode PH 33D fastest finger first indicator synopsis emerson three phase dc motor driver service note tektronix 576 curve tracer MIL-STD-750E 1071 proximity detector sensor
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2007 INCH - POUND MIL-STD-750E 20 November 2006 SUPERSEDING MIL-STD-750D 28 FEBRUARY 1995 DEPARTMENT OF DEFENSE TEST METHOD STANDARD TEST METHODS FOR SEMICONDUCTOR DEVICES

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

PB102F

Abstract: MDC5FA2 KT 805 MDC12FA2 MDC30FX2 MDC8FX2 PB101F PB112F MA768 MA769
Contextual Info: - 134 - -X m £ tt « Pr s m Vr s m m MA768 MA769 M B —4—01 MB-4-02 MB-4-04 M B —4-06 M B —4—08 MD4F MD6F MD8F MD1 0 F MD20SH05K MD36SH05K MD50SH05K MD-100X08C MDA65SN1K MDC5FA2 MDC8FX2 MDC12FA2 MDC16FX2 MDC20FA2 MDC30FX2 OR6JXZ33A OR6LXZ33A OR6QXZ33A

mdc5fa2

Abstract: MA768 MA769 MB-4-01 MB-4-02 MB-4-04 MB-4-06 MB-4-08 MD10F PB102F
Contextual Info: - 134 - -X m £ tt « Pr s m Vr s m m MA768 MA769 M B —4—01 MB-4-02 MB-4-04 M B —4-06 M B —4—08 MD4F MD6F MD8F MD1 0 F MD20SH05K MD36SH05K MD50SH05K MD-100X08C MDA65SN1K MDC5FA2 MDC8FX2 MDC12FA2 MDC16FX2 MDC20FA2 MDC30FX2 OR6JXZ33A OR6LXZ33A OR6QXZ33A

mdc5fa2

Abstract: PB102F MA768 MA769 MB-4-01 MB-4-02 MB-4-04 MB-4-06 MB-4-08 MD10F
Contextual Info: - 134- -X m £ tt « Pr s m m MA768 MA769 M B —4—01 MB-4-02 MB-4-04 töT M B —4-06 M B —4—08 MD4F MD6F MD8F * ' y * ' ) -y y MD1 0 F MD20SH05K MD36SH05K MD50SH05K MD-100X08C MDA65SN1K MDC5FA2 MDC8FX2 MDC12FA2 MDC16FX2 MDC20FA2 MDC30FX2 OR6JXZ33A

PB10S1

Abstract: 150x150x3mm
Contextual Info: DIODE Type：PB10S1,2,4,6 •OUTLINE DRAWING 構造 ：単相ブリッジ型シリコン整流器 Construction: Single Phase Bridge Rectifier 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating Approx Net weight:8.5g

Contextual Info: 4 » Pfeois Pfe03S Pfe06S P b io s DIMENSIONS Approvals: PANEL CUT-OUT ATTENUATION IN 50 OHM-50 OHM CIRCUIT ACCORDING CISPR PB01S 1 AMP •s. * *. n. NFiA . •: \ r ' ’ / — c 100K 1M Frequency (Hz) SOM • General purpose filter with •EC Connector providing effective

PDM5001

Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Contextual Info: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH

FCGS20A12

Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Contextual Info: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

PB102F

Abstract: MDC12FA2 MDC5FA MDC20FA2 PB112F mdc12fa mdc5fa2 MDC30FX2 MA768 MB-4-02
Contextual Info: - 134 - -X m £ tt « Pr s m Vr s m m MA768 MA769 M B —4—01 MB-4-02 MB-4-04 M B —4-06 M B —4—08 MD4F MD6F MD8F MD1 0 F MD20SH05K MD36SH05K MD50SH05K MD-100X08C MDA65SN1K MDC5FA2 MDC8FX2 MDC12FA2 MDC16FX2 MDC20FA2 MDC30FX2 OR6JXZ33A OR6LXZ33A OR6QXZ33A

PB102F

Abstract: 793 FF mdc5fa2 MDC8FX2 MA768 MA769 MB-4-01 MB-4-02 MB-4-04 MB-4-06
Contextual Info: - 1 34 - 5e -X m £ tt « Pr s m m MA768 MA769 M B —4—01 MB-4-02 MB-4-04 töT M B —4-06 M B —4—08 MD4F MD6F MD8F * ' y * ' ) -y y Vr s m V) * ') ;y y * ') ÿ y •*') ;y y BM B n 2400 3600 4800 Vr Vi Io T f ctf (V) (V) (V) (A) CC) 150 150 100 200

Contextual Info: Type：PB10S6 DIODE •OUTLINE DRAWING 構造 ：単相ブリッジ型シリコン整流器 Construction: Single Phase Bridge Rectifier 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating Approx Net weight:8.5g

LGA voiding

Abstract: CCGA APD-SCC-201 IBM ccga 67F4333 ceramic rework 810E N100 cte table flip chip substrate cte table epoxy
Contextual Info: CLASP CERAMIC COLUMN GRID ARRAY TECHNOLOGY FOR FLIP CHIP CARRIERS S. Ray, M. Interrante, L. Achard * , M. Cole, I. DeSousa(*), L. Jimarez, G. Martin, and C. Reynolds, IBM Microelectronics Division Hopewell Jct., NY (*) IBM Canada, Bromont, QUE Biography Sudipta Ray is a Senior Engineer in Interconnections