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    P-Channel FET 100v

    Abstract: PARTMARKING mr ZVP3310 zvp3310f ZVN3310F DSA0037411 zvp331
    Contextual Info: ZVP3310F TYPICAL CHARACTERISTICS VGS= -20V -16V -14V -12V -10V -9V -8V -7V -6V -0.2 -5V -4V -6 Drain Source -0.4 -8 -4 ID= -0.3A -2 -0.15A -0.075A -2 -4 -6 -8 -10 V I - Drain Current Amps -0.6 -10 -6 -8 -10 Voltage Saturation Characteristics Saturation Characteristics


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    ZVP3310F ZVN3310F -150mA P-Channel FET 100v PARTMARKING mr ZVP3310 zvp3310f ZVN3310F DSA0037411 zvp331 PDF

    GNDBH 02

    Contextual Info: U t Integrated Device Technology, Inc. HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT70V07S/L FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Commercial: 25/35/55ns max.)


    OCR Scan
    IDT70V07S/L 25/35/55ns IDT70V07S 450mW IDT70V07L IDT70V07 IDT70V07S/L GNDBH 02 PDF

    Contextual Info: BvNf fdt HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM IDT7026S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Military: 20/25/35/55ns max.)


    OCR Scan
    IDT7026S/L 20/25/35/55ns 15/20/25/35/55ns IDT7026S 750mW IDT7026L IDT7026 MIL-STD-883, 84-pin PDF

    ral 7016

    Contextual Info: «ID T HIGH-SPEED 1 6 K X 9 DUAL-PORT STATIC RAM Features ♦ True Dual-Ported memory cells which allow simultaneous reads of the same memory location ♦ High-speed access - Military:20/25/35ns max. - Commercial: 12/!5/20/25/35ns (max.) * Low-power operation


    OCR Scan
    IDT7016S/L 20/25/35ns 5/20/25/35ns IDT7016S 750mW IDT7016L IDT7016 ral 7016 PDF

    Contextual Info: HIGH-SPEED 16Kx 16 DUAL-PORT STATIC RAM WITH INTERRUPT IDT70261S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Industrial 25ns max.


    OCR Scan
    IDT70261S/L 15/20/25/35/55ns IDT70261S 750mW IDT70261L IDT70261 IDT70261S/L 100-pin PN100-1) PDF

    AH81

    Abstract: RA15R DZ60
    Contextual Info: HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT7008S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous reads of the same memory location • High-speed access — Military: 25/35/55ns max.


    OCR Scan
    IDT7008S/L 25/35/55ns 20/25/35/55ns IDT7008S 750mW IDT7008L IDT7008 MIL-STD-883, 100-pin AH81 RA15R DZ60 PDF

    Contextual Info: ST n« HIGH-SPEED 16Kx 16 DUAL-PORT STATIC RAM WITH INTERRUPT My IDT70261S/L integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Industrial 25ns max.


    OCR Scan
    IDT70261S/L 15/20/25/35/55ns IDT70261S 750mW IDT70261L IDT70261 IDT70261S/L 100-pin PN100-1) PDF

    Contextual Info: 3.3V 64/32K X 18 SYNCHRONOUS FOURPORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True four-ported memory cells which allow simultaneous access of the same memory location Synchronous Pipelined device – 64/32K x 18 organization Pipelined output mode allows fast 200MHz operation


    Original
    64/32K 200MHz IDT70V5388/78 70V5388 1152K 70V5378 PDF

    IDT70V5378

    Contextual Info: 3.3V 64/32K X 18 SYNCHRONOUS FOURPORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True four-ported memory cells which allow simultaneous access of the same memory location Synchronous Pipelined device – 64/32K x 18 organization Pipelined output mode allows fast 200MHz operation


    Original
    64/32K 200MHz IDT70V5388/78 IDT70V5378 PDF