PART NUMBER CODE VB Search Results

GENERAL SEMICONDUCTOR MARKING SJ SMA

Abstract: VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band Vishay Part Number

VC 5022-2

Abstract: c102m tt 2222 CZ20A 2222 733 23474 2222 04 A 821 a331j cz-20 philips TT132
Contextual Info: Philips Components Cross reference selection guide Leaded ceramic multilayer capacitors Table 1 Mono-kap conformal radials NP0 C0G , 5% and 10% tolerance, 50 V DISTRIBUTION PART NUMBER 15-DIGIT CODE(1) 12NC CODE PITCH CN 15 C 100 J K 100 J 15 C0G F VB

MVB3030X103M2

Abstract: MVL2020X103MEH5R MVL2020X102M2H5R MVB3030X223MG EIA-469 NVL3030X682M2H5N MVL3030 MVB3030X103MG s 5R1 MVL3030X472M3H5R
Contextual Info: GLOBAL PART NUMBER EXAMPLE How to Order M VB 3030 X 103 Z G H 5 R — * Test Code VL = Vertical Layer VB = Vertical Broadband Size (Pg. 9) Dielectric Capacitance Capacitance Tolerance Voltage Termination Packaging RoHS Compliant VL – Hyphen Required VB – Special Code

WL1271

Abstract: WL1271L TI WL1271L wl1271 application note Wl1271 specification Wl1271 WLAN specification 772C-LBTN TI 1271 fm wlan wl1271 PCM LBEE5ZSTNC-523
Contextual Info: Preliminary Specification Number: SP-ZSTN-C P. 1/34 W-LAN + Bluetooth Combo Module Data Sheet 802.11b/g/n and Bluetooth v4.0 module Product Part Number: LBEE5ZSTNC-523 Preliminary Specification Number: SP-ZSTN-C P. 2/34 Revision History Revision Code Date

SMBJ8.5CA

Abstract: SMBJ15A SMBJ20A SMBJ11CA SMBJ12A SMBJ150A SMBJ14CA SMBJ18CA SMBJ200A SMBJ300A
Contextual Info: SMBJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.0 TO 440 Volts 600 Watt Peak Pulse Power DEVICE REVERSE BREAKDOW BREAKDOW TEST MARKING STANDN VOLTAGE N VOLTAGE CURRE PART NUMBER OFF CODE VBR V VBR(V) NT VOLTAGE I MIN.@I MAX.@I

darlington power transistor 10a

Abstract: npn DARLINGTON 10A TO-202 transistor NPN IB-20mA CEN-U45 TO-202 transistor npn transistor gain 20 current 200mA
Contextual Info: Central TM Semiconductor Corp. CEN-U45 NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CEN-U45 type is an NPN Silicon Monolithic Darlington Transistor designed for applications requiring high gain and high power dissipation. MARKING CODE: FULL PART NUMBER

2N5109

Contextual Info: Central 2N5109 TM Semiconductor Corp. SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER

CK 77-1 3 94V-0

Abstract: BDP 548 P6SMBJ33CA 3T260AA P4SMAJ11CA GI 1.5KE250A ddx 2050 3T180AA 3T130AA Zener diode wz 162
Contextual Info: 3T Thyristor Series MERITEK UL E223027 SMA AND AXIAL LEAD DO-41 3T PART NUMBER 3T110AA 3T130AA 3T150AA 3T180AA 3T230AA 3T260AA 3T310AA 3T350AA MARKING CODE FOR AXIAL DO-41 PACKAGE FOR SMA PACKAGE 3T110AAL 3T130AAL 3T150AAL 3T180AAL 3T230AAL 3T260AAL 3T310AAL

DME201010R

Abstract: DME20101 dsa200
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DME20101 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification • Features  Package  Basic Part Number  Code Mini5-G3-B  Pin Name

CW20C104K

Abstract: K822 CZ30C105M CW20C473K CW15C103 CW15A102K CZ20C104M CW15C103K CN15A150 CW20C333K
Contextual Info: Ceramic Capacitors Series K Mono-KAP COG, X7R, Y5V AND Z5U, 50VDC, 100VDC, Conformal Coated Radial MultilayerCapacitors How to order: Parameters See Fig. 1 & 2 for part number code for OEM or distributor temp, coeff. COG, X7R, Y 5 V & Z 5 U Case Size: Voltage:

Contextual Info: WIRE BONDABLE VERTICAL ELECTRODE CAPACITORS PRESIDIO ADVANTAGE VL SERIES • Wire Bondable Bypass Capacitors for MMIC’s • Wire Bondable Integrated Broadband Bypass Capacitors for MMIC’s up to Millimeter Frequencies • Low Profile Multi-Layer VL: VB:

MVL3030X103M2H5R

Abstract: MVL3030 MVB4080X104MG
Contextual Info: WIRE BONDABLE VERTICAL ELECTRODE CAPACITORS PRESIDIO ADVANTAGE VL SERIES • Wire Bondable Bypass Capacitors for MMIC’s • Wire Bondable Integrated Broadband Bypass Capacitors for MMIC’s up to Millimeter Frequencies • Low Profile Multi-Layer VL: VB:

MVL2741X104MGH5C

Contextual Info: WIRE BONDABLE VERTICAL ELECTRODE CAPACITORS PRESIDIO ADVANTAGE VL SERIES • Wire Bondable Bypass Capacitors for MMIC’s • Wire Bondable Integrated Broadband Bypass Capacitors for MMIC’s up to Millimeter Frequencies • Low Profile Multi-Layer VL: VB:

MIL-STD-883 Method 2019

Abstract: MVB3030X103ZGH5N1
Contextual Info: "VB" Series Integrated Broadband Bypass Capacitors 10 nF or 100 nF DC Decoupling with Buried RF Capacitors Inside Environmental Parameters per Mil-C-49464/55681 when specified Mil-Std-202 Conditions Immersion: 104 B Moisture Resistance: 106 - Resistance to Solder Heat:

Contextual Info: P6KE SERIES Taiwan Semiconductor CREAT BY ART Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 s waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional

Contextual Info: P4KE SERIES Taiwan Semiconductor CREAT BY ART Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 400W surge capability at 10 / 1000 s waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional

Contextual Info: 1.5KE SERIES Taiwan Semiconductor CREAT BY ART Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 1500W surge capability at 10 / 1000 s waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional

bu 3 GDG 125

Abstract: marking CODE smb J36 diode 13.8 8w zener diode DO-214A sma marking sm RG DO-214AA smj58 24 DO-214A bu 450 GDF diode gde 61 81g diode
Contextual Info: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage

Contextual Info: SA SERIES Taiwan Semiconductor CREAT BY ART Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 500W surge capability at 10 / 1000 s waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional

Contextual Info: 1.5KE SERIES Taiwan Semiconductor CREAT BY ART Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 1500W surge capability at 10 / 1000 s waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional

Contextual Info: SODDB3/SODDB3T Taiwan Semiconductor Small Signal Product SOD-123 Trigger Diode DIAC FEATURES - Surface Mount Device SOD-123 packaged - VBO=32V DB3 - Max. PD=400mW MECHANICAL DATA - Case: Plastic gull wing SOD-123 package - High temperature soldering guaranteed: 260°C/10s

TSOC 6

Abstract: TSOC6
Contextual Info: DS2423 4kbit 1-Wire RAM with Counter ƒ ƒ ƒ ƒ D ew 6 2 5 3 4 rN 1 TOP VIEW 3.7mm x 4.0mm x 1.5mm SIDE VIEW PIN DESCRIPTION Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Ground Data Vbat NC Input channel B Input channel A ORDERING INFORMATION DS2423P DS2423P/T&R DS2423P+

marking code SM diode

Abstract: GGV diode GGT DIODE marking SM 98 tvs diode sma nu GHM 25 DIODE GHM DIODE ph 41 zener diode ggr 86 176/Diode Zener C 47 pH
Contextual Info: SURFACE MOUNT TVS & Zener Diodes TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage

Contextual Info: BZW06 SERIES Taiwan Semiconductor CREAT BY ART Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 s waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional