PARAMETER OF DIGITAL IC Search Results

block diagram of digital TV

Abstract: Tv BOX Diagram S020 SAA7157 SAA7157P SAA7157T philips 5b
Contextual Info: Philips Components D ata sheet s tatu s Preliminary specification d a te of issue April 1991 FEATURES • PUL frequency m ultiplier SAA7157 Clock signal generation circuit SCGC for a digital TV system Q U IC K REFERENCE DATA SY M B O L PARAMETER digital supply voltage

TMS320C28xx

Abstract: TMS320C28x ccs compiler intrinsics tms320c2000 tic28
Contextual Info: Application Report SPRA806 - December 2001 An Easy Way of Creating a C-callable Assembly Function for the TMS320C28x DSP Todd Anderson Digital Signal Processing Solutions ABSTRACT C-callable assembly routines require an understanding of parameter-passing conventions

Contextual Info: EMB3 / UMB3N / IMB3A PNP -100mA -50V Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline Parameter Tr1 and Tr2 VCEO -50V -100mA 4.7kW IC(MAX.) R1 EMT6 UMT6 (6) (1) (2) (5) (4) SMT6 (4) lFeatures of the input. They also have the advantage of

Contextual Info: EMH4 / UMH4N / IMH4A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter Tr1 and Tr2 VCEO 50V 100mA 10kW IC(MAX.) R1 EMT6 (6) (1) (2) UMT6 (5) (4) SMT6 (4) lFeatures of the input. They also have the advantage of

Contextual Info: DTC023J series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Builtin Transistors l Outline Parameter VCC Value 50V IC(MAX.) 100mA R1 R2 2.2kΩ 47kΩ l Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of

UN1113

Abstract: UNR1113 XN06113 XN6113
Contextual Info: Composite Transistors XN06113 XN6113 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Symbol

Contextual Info: Am7970 Compression/Expansion Processor CEP PRELIMINARY DISTINCTIVE CHARACTERISTICS • Compression/Expansion of digital two-tone image data using run-length and relative address coding - Two-Dimensional, Modified READ (MR and MMR) coding with programmable K-Parameter.

UN1116

Abstract: UNR1116 XN06116 XN6116
Contextual Info: Composite Transistors XN06116 XN6116 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Symbol

UN1213

Abstract: UNR1213 XN06213 XN6213
Contextual Info: Composite Transistors XN06213 XN6213 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current 1 : Collector (Tr1)

UN1111

Abstract: UNR1111 XN06111 XN6111
Contextual Info: Composite Transistors XN06111 XN6111 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Symbol

Contextual Info: DTA023Y series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value -50V IC(MAX.) -100mA R1 R2 2.2kΩ 10kΩ l Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of

UN1212

Abstract: UNR1212 XN06212 XN6212
Contextual Info: Composite Transistors XN06212 XN6212 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current

UN1213

Abstract: UNR1213 XN04213 XN4213
Contextual Info: Composite Transistors XN04213 XN4213 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter Collector to base voltage Rating of Collector to emitter voltage element Collector current +0.1 +0.1 0.4±0.2

XN4111

Abstract: UN1111 UNR1111 XN04111
Contextual Info: Composite Transistors XN04111 XN4111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current +0.1 +0.1 0.4±0.2

UN1215

Abstract: UNR1215 XN04215 XN4215
Contextual Info: Composite Transistors XN04215 XN4215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current

UN121L

Abstract: UNR121L XN0421L XN421L
Contextual Info: Composite Transistors XN0421L XN421L Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current

UN1114

Abstract: UNR1114 XN06114 XN6114
Contextual Info: Composite Transistors XN06114 XN6114 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current

UN1211

Abstract: UNR1211 XN04211 XN4211
Contextual Info: Composite Transistors XN04211 XN4211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current +0.1 +0.1 0.4±0.2

UN1214

Abstract: UNR1214 XN06214 XN6214
Contextual Info: Composite Transistors XN06214 XN6214 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current

UN1112

Abstract: UNR1112 XN06112 XN6112
Contextual Info: Composite Transistors XN06112 XN6112 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current

UN1115

Abstract: UNR1115 XN06115 XN6115
Contextual Info: Composite Transistors XN06115 XN6115 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating of Collector to emitter voltage element Collector current

UN1216

Abstract: UNR1216 XN06216 XN6216
Contextual Info: Composite Transistors XN06216 XN6216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current

Contextual Info: DTA023J series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value -50V IC(MAX.) -100mA R1 R2 2.2kΩ 47kΩ l Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of

UN1211

Abstract: UNR1211 XN06211 XN6211
Contextual Info: Composite Transistors XN06211 XN6211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current