PAL MACROCELLS Search Results

GAL16V8

Abstract: GAL16VP8 GAL18V10 GAL20RA10 GAL20V8 GAL20VP8 GAL20XV10 GAL22V10 GAL26CV12
Contextual Info: Introduction to GAL Device Architectures Base Products - Aimed at providing superior design alternatives to bipolar PLDs, these five architectures replace over 98% of all bipolar PAL devices. The GAL16V8 and GAL20V8 replace forty-two different PAL devices.

Pal programming 22v10

Abstract: GAL16V8 GAL16VP8 GAL18V10 GAL20RA10 GAL20V8 GAL20VP8 GAL20XV10 GAL22V10 GAL26CV12
Contextual Info: Introduction to GAL Device Architectures Base Products - Aimed at providing superior design alternatives to bipolar PLDs, these five architectures replace over 98% of all bipolar PAL devices. The GAL16V8 and GAL20V8 replace forty-two different PAL devices.

United Technologies Microelectronics

Contextual Info: Military Standard Products UT22VP10 Radiation-Hardened Universal PAL Product Brief UNITED TECHNOLOGIES MICROELECTRONICS CENTER October 1993 □ Low operating current Ipo: 60ma + 1.5ma/MHz FEATURES D High speed Universal PAL - tp p : 25ns maximum CMOS 30ns maximum (TTL)

Pal 009b

Abstract: signal path designer
Contextual Info: COM’L z \ Advanced Micro Devices PALCE26V12H-15/20 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 28-pln versatile PAL programmable logic device architecture ■ Electrically erasable CMOS technology provides half power only 105 mA at high

22V10D

Abstract: PALC22V10D-10PC PALC22V10B PALC22V10B-15 PALC22V10D PALC22V10D-10JC
Contextual Info: MbE D CYPRESS SEMICONDUCTOR • aSBTbbE QOGbcieJS 3 E3CYP PRELIMINARY CYPRESS SEMICONDUCTOR PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device Features Advanced second-generation PAL ar­ chitecture Low power — 90 mA max. standard — 120 mA max. military

Contextual Info: _ PALC22V10D SEMICONDUCTOR Flash Erasable, Reprogrammable CMOS PAL Device • Advanced second-generation PAL ar­ chitecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns) • CMOS Flash EPROM technology for

T Flip-Flop

Contextual Info: Comi * PAL22IP6-25 Interface Protocol Asynchronous Cell IPAC PAL Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • PAL device optimized for asynchronous Interface protocol applications ■ High currant driving capability—48 mA/64 mA ■ Six unique edge-actlvaled flip-flops

palc22v10d programming guide

Contextual Info: Flash Erasable, Reprogrammable CMOS PAL Device Features • Advanced second-generation PAL architecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns) • CMOS Flash EPROM technology for electrical erasabllity and reprogrammablllty

Contextual Info: Revision: Tuesday, January 5,1993 C.- PALC22V10D CYPRESS -SEMICONDUCTOR • Flash Erasable, Reprogrammable CMOS PAL Device Features Advanced second-generation PAL ar­ chitecture Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns)

Contextual Info: PALCE26V12H-20/25 28-Pin EE C M O S Versatile PAL Device DISTINCTIVE CHARACTERISTICS 28-pin versatile PAL® programmable logic device archi­ tecture Electrically erasable CMOS technology provides half power only 105 mA at high speed (20 ns propagation

pal22v10

Abstract: al22v10 AMPAL22V10 5962-86053013X
Contextual Info: Am PAL22V 10 24-Pin IMOX Programmable Array Logic PAL Distinctive Characteristics • Second-generation PAL device architecture • • • • Increased logic power — up to 22 inputs and 10 outputs Increased product terms — average 12 per output

AM 22V10

Abstract: Resistor Fuse 4.91 AMD 22V10 ampal
Contextual Info: AmPAL*22V10 24-Pin IMOX Programmable Array Logic PAL • • Second-generation PAL architecture Increased logic power — up to 22 inputs and 10 outputs Increased product terms — average 12 per output Variable product term distribution improves ease of use

pal 007a

Abstract: pal 005a PAL 010a PAL 006A DIAGRAM pal 005a amd 22V10 PAL22V10 PALCE26V12 signal path designer
Contextual Info: a PALCE26V12H-15/20 Advanced Micro Devices 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 28-pin versatile PAL programmable logic device architecture ■ Electrically erasable CMOS technology provides half power only 105 mA at high speed (15 ns propagation delay)

Contextual Info: •> CMOS Programmable g o u ld Electrically Erasable Logic Device AM I «Semiconductors PEEL 20C610 Features • Application Versatility — Replaces random SSI/MSI logic — Emulates 24-pin bipolar PAL devices — Convert 24-pin PAL and EPLD designs with

PAL 006A

Abstract: IC PAL 006A
Contextual Info: c o m ’l a PALCE26V12H-20/25 Advanced Micro Devices 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 28-pln versatile PAL programmable logic device architecture ■ Two clock Inputs for Independent functions ■ Electrically erasable CMOS technology

Contextual Info: PALCE26V12H-15/20 Advanced Micro Devices 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 28-pin versatile PAL programmable logic device architecture ■ Electrically erasable CMOS technology provides half power only 105 mA at high speed (15 ns propagation delay)

74Fxxx

Abstract: PAL22IP6
Contextual Info: Com'l a PAL22IP6-25 Interface Protocol Asynchronous Cell IPAC PAL Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • PAL device optimized for asynchronous Interface protocol applications ■ High currant driving capability— 48 mA/64 mA ■ Six unique edge-activated flip-flops

MULTIPLEXER IC

Abstract: palce programming Guide AMD PALCE
Contextual Info: FINAL COM’L: H-7/10/15/20 IND: H-10/15/20 Advanced Micro Devices PALCE26V12 Family 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 28-pin versatile PAL programmable logic device architecture ■ Two clock inputs for independent functions

22V10D-10

Abstract: 22V10D MIL-STD-1835 V10D-9 R1238 ay 9j CERAMIC LEADLESS CHIP CARRIER K73 Package PALC22V10D R2170
Contextual Info: fax id: 6007 For new designs, please refer to the PALCE22V10. PALC22V10D CYPRESS Flash Erasable, Reprogrammable CMOS PAL Device Features • Advanced second-generation PAL architecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns)

Contextual Info: •> g o u l d A M I * Semiconductors CMOS Programmable Electrically Erasable Logic Device PEEL 20CG10 Features • A pplication Versatility — Replaces random SSI/MSI logic — Emulates 24-pin bipolar PAL devices — Convert 24-pin PAL and EPLD designs with

VP16V8

Abstract: VP20V8 VP20V8E-25 VP16V8E VP20V8E-35 ST 6395 BI VP16V8E-25 VP20V8E 16H8 gal programming algorithm
Contextual Info: VP16V8E • VP20V8E € GENERIC ARRAY LOGIC FEATURES • VP16V8E replaces most 20-pin bipolar PAL devices • Power-on reset for all registers • High-speed programming algorithm • VP20V8E replaces most 24-pin bipolar PAL devices • JEDEC approved TTL compatible

Contextual Info: Final COM’L El Advanced Micro Devices PALCE26V12H-20/25 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ 28-pln versatile PAL programmable logic device architecture Electrically erasable CMOS technology provides half power only 105 mA at high

palce programming Guide

Abstract: PALCE Programmer palce programmer schematic amd programmers guide amd part marking Pal programming PAL22V10 PALCE26V12 PALCE26V12H-7 AMD PALCE
Contextual Info: FINAL COM’L: H-7/10/15/20 IND: H-10/15/20 PALCE26V12 Family 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 28-pin versatile PAL programmable logic device architecture ■ Electrically erasable CMOS technology provides half power only 115 mA at high

22V10D

Abstract: 22V10D-10 22V10D-15 PALC22V10D PALC22V10D-7JC PALCE22V10 V10D
Contextual Info: For new designs, please refer to the PALCE22V10. PALC22V10D Flash Erasable, Reprogrammable CMOS PAL D Features D D Advanced secondĆgeneration PAL arĆ D D 5 ns tCO Low power 5 ns tS Ċ 90 mA max. commercial 10 ns 7.5 ns tPD testing Functional Description