V10D Search Results

Contextual Info: V10D100C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm

Contextual Info: V10D120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 2.5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm

Contextual Info: V10D60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A FEATURES ® TMBS eSMP Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm

Contextual Info: V10D120C-M3, V10D120CHM3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 2.5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm

Contextual Info: V10D100C-M3, V10D100CHM3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology generation 2 TO-263AC SMPD

Contextual Info: V10D202C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS eSMP® Series • Trench MOS Schottky technology generation 2 TO-263AC SMPD • Very low profile - typical height of 1.7 mm • Ideal for automated placement

Contextual Info: V10D45C www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm

Contextual Info: V10D120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 2.5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology SMPD • Very low profile - typical height of 1.7 mm

Contextual Info: V10D60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A FEATURES ® TMBS eSMP Series • Trench MOS Schottky technology SMPD • Very low profile - typical height of 1.7 mm • Ideal for automated placement

Contextual Info: V10D100C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology SMPD • Very low profile - typical height of 1.7 mm

Contextual Info: V10D60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A FEATURES TMBS eSMP® Series TO-263AC SMPD • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm

Contextual Info: V10D45C www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A FEATURES TMBS eSMP® Series TO-263AC SMPD • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm

Contextual Info: V10D45C www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology SMPD • Very low profile - typical height of 1.7 mm

22V10D

Abstract: PALC22V10D-10PC PALC22V10B PALC22V10B-15 PALC22V10D PALC22V10D-10JC
Contextual Info: MbE D CYPRESS SEMICONDUCTOR • aSBTbbE QOGbcieJS 3 E3CYP PRELIMINARY CYPRESS SEMICONDUCTOR V10D Flash Erasable, Reprogrammable CMOS PAL Device Features Advanced second-generation PAL ar­ chitecture Low power — 90 mA max. standard — 120 mA max. military

ERZ-V10D511

Contextual Info: “ZNR” Transient/Surge Absorbers Type D 10 Series • Ratings and Characteristics ● Operating Temperature Range : –40 to 85 °C ● Storage Temperature Range : –40 to 125 °C V10D180 to V10D680 Part No. V10D180 V10D220 V10D270 V10D330

Varistor V471U

Abstract: v201u 270 nr 14d znr V14 4D560 V271U v471u 14D621 V221U PANASONIC VARISTORS ZNR
Contextual Info: ÒZNRâÓ Transient/Surge Absorbers Type D ÒZNRâÓ Transient/Surge Absorbers Series: Type: V D ÒZNRâÓ Transient/Surge Absorber, Series V, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

Contextual Info: VISHAY DIODES RECTIFIERS, ABD TVS and Zener Diodes For Automotive Applications June 2013 VISHAY DIODES Automotive Applications ABD TVS Applications Rectifier Applications Load dump Second protection Freewheeling Polarity protection Signal line protection Rectification

22V10D-10

Abstract: 22V10D MIL-STD-1835 V10D-9 R1238 ay 9j CERAMIC LEADLESS CHIP CARRIER K73 Package PALC22V10D R2170
Contextual Info: fax id: 6007 For new designs, please refer to the PALCE22V10. V10D CYPRESS Flash Erasable, Reprogrammable CMOS PAL Device Features • Advanced second-generation PAL architecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns)

22V10D

Abstract: 22V10D-10 22V10D-15 PALC22V10D PALC22V10D-7JC PALCE22V10 V10D
Contextual Info: For new designs, please refer to the PALCE22V10. V10D Flash Erasable, Reprogrammable CMOS PAL D Features D D Advanced secondĆgeneration PAL arĆ D D 5 ns tCO Low power 5 ns tS Ċ 90 mA max. commercial 10 ns 7.5 ns tPD testing Functional Description

TE92

Abstract: YTE73
Contextual Info: HYM71V8655HCT6 8Mx64, 8Mx16 based, PC100 D E S C R IP T IO N The Hynix HYM71V8655HCT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

AD9789

Abstract: AD9726 ADL5375 AD5504 AD9117 ADSP-BF531 rheostat speed control circuit DAC-V10-IS1-09 AD5270 AD5501
Contextual Info: YOUR SEMICONDUCTOR SOLUTIONS RESOURCE Volume 10, Issue 1 DIGITAL-TO-ANALOG CONVERTER ICs Contents Current Output DACs Provide Unmatched Combination of Speed and Accuracy . . 1 Precision DACs Offer Up to 60 V Output Range . . . . . . . . . . . . . . . . . . . . 2

ERZ-V10D471

Abstract: ERZV10D471 ERZV10D681
Contextual Info: ÒZNRâÓ Transient/Surge Absorbers Type D 10 Series n Ratings and Characteristics l Operating Temperature Range : Ð40 to 85 ûC l Storage Temperature Range : Ð40 to 125 ûC l Temperature Coefficient of Varistor Voltage : 0 to Ð0.05 %/ûC V10D180 to V10D680

palc22v10d programming guide

Contextual Info: Flash Erasable, Reprogrammable CMOS PAL Device Features • Advanced second-generation PAL architecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns) • CMOS Flash EPROM technology for electrical erasabllity and reprogrammablllty

RECEIVER DSR 5012

Abstract: hp 54520a hp 33120a ISO 2110 EIA standards 763 digital multimeter circuit SP3508 SP3508CF RL141 pt 7313
Contextual Info: TUV Rheinland of North America, Inc. 10900 73rd Ave. N Suite 124 Maple Grove, MN USA 55369 Tel. +1 763 315-5012 Fax. +1 (763) 315-5081 PRELIMINARY TEST REPORT NO. TBR2/30451940.001/04 Date: September 10, 2004 Total Number of Pages: 123 Equipment: SP3508 Evaluation Board w/ SP3508CF Chipset