PAGE110 Search Results

Contextual Info: 19-Serie 6000-A_20-Serie 6000-A 21/11/12 14:06 Page110 6000 series Toggle switches for military applications Distinctive features and specifications ❑ Suitable for military or industrial applications ❑ Sealing and locking lever options available A ❑ Matt black finish on actuator and bushing

59013 h 331

Abstract: 59014 c 331 comcode 105 736 490 fcs 9013 GR-253-CORE JT-G704 JT-G706 TMXL28155 TR-62411 59014 c
Contextual Info: Preliminary Data Sheet, Rev 2 June, 2002 TMXL28155 SupermapperLite 155/51 Mbits/s SONET/SDH x28/x21 DS1/E1 1 Features • ■ Versatile IC supports 155/51 Mbits/s SONET/SDH interface solutions for T3, DS2, and T1/E1/J1 applications. Implementation supports both linear 1 + 1, unprotected and ring (UPSR) network topologies.

ad7753

Abstract: AD7754 circuit for ad7753 AD7750 AD7751 AD7755
Contextual Info: TRANSFER FUNCTION Fout=V1*V2*Gain/Vref Fout=V1*V2*Gain/Vref Fout=V1*V2*Gain/Vref AD7753 AD7754 AD7755 1:04 PM Fout=V1*V2*Gain/Vref AD7751 12/28/99 Fout=V1*V2*Gain/Vref AD7750 Power Meter, Vout=Frequency MODEL NUMBER 0.2 0.2 0.2 0.3 0.2 0.3 0.2 0.2 0.3 0.2

NT5CB256M8GN

Abstract: NT5CC256M8GN NT5CB256M8GN-DI NT5CC256M8GN-D NT5CC512M4GN NT5CC512M4GN-CG NT5CB256M8GN-CG "2Gb DDR3 SDRAM" NT5C NT5CB256M8
Contextual Info: 2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature  VDD = VDDQ = 1.5V ± 0.075V JEDEC Standard  Programmable Burst Length: 4, 8 Power Supply  8n-bit prefetch architecture VDD = VDDQ = 1.35V -0.0675V/+0.1V  Output Driver Impedance Control

Contextual Info: POWER MANAGEMENT: ENERGY METER MODEL Measurement Error NUMBER G=1 G=16 Dynamic range CH 1=500 % reading % reading Phase Phase Error Error Lead 40° Lag 60° PF=+.8 PF=-.5 ° ° Fclk Mhz Band Inst’ous Output Width Power -3dB fout KHz KHz Power Cali bration

Contextual Info: 32-bit TX System RISC TX03 Series TMPM330FYWFG Rev 1.02 Semiconductor & Storage Products Company 2013-08-05 Table of Contents Table of Contents. i

NT5CC256

Abstract: NT5CB256M8GN- CG
Contextual Info: 2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature  1.35V -0.0675V/+0.1V & 1.5V ± 0.075V JEDEC  Output Driver Impedance Control Standard Power Supply  Differential bidirectional data strobe  8 Internal memory banks (BA0- BA2)

C200H lk201 OMRON Operation Manual

Abstract: c200h-lk201 JW-22CU PLC SHARP JW-22CU mitsubishi plc FX SERIES OMRON C200H CPU 42 OMRON C200H mitsubishi cable pc a plc A1s OMRON plc programming console manual A1SJ71UC24-R4
Contextual Info: Version 1.0 Produced in July 2002 Compact image sensor camera IV-S30 Series Controller: IV-S31MX/S32MX/S33MX User's Manual Function and Operation Remote keypad: IV-S30RK1 Controller: IV-S31MX/32MXS33MX Standard camera: IV-S30C1 High-speed camera: IV-S30C3

Contextual Info: 15-Serie 1200-A_20-Serie 1200-A 21/11/12 16:41 Page107 1200 series Momentary pushbutton switches - round plunger Distinctive features and specifications ❑ Butt action contacts, double break ❑ NF EN 61058-1 , UL and CSA approved B2 ELECTRICAL SPECIFICATIONS

MOSFET-48V

Abstract: powr607 emmc schematic 4700uF mosfet-n EIA96 ISPPAC-POWR607 eMMC DC-DC 5V-3,3V ISPPAC-POWR1014
Contextual Info: Power 2 You 電源管理・制御の完全ガイド ボードレベルの電源管理機能 学習できるハウツーには以下が含まれます： »» 電源管理コストの低減 »» システムの信頼性を向上 »» 回路基板を改版するリスクの軽減

NT5CC256

Contextual Info: 2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature  1.35V -0.0675V/+0.1V & 1.5V ± 0.075V JEDEC  Output Driver Impedance Control Standard Power Supply  Differential bidirectional data strobe  8 Internal memory banks (BA0- BA2)

NT5CB64M16FP-DH

Abstract: NT5CB64M16FP nt5cb64m16 NT5CB128M8FN-DH NT5CC64M16FP NT5CB128M8FN NT5CB64M1
Contextual Info: 1Gb DDR3 F-die SDRAM NT5CB128M8FN/NT5CB64M16FP NT5CC128M8FN/NT5CC64M16FP Preliminary Feature Table 1: CAS Latency Frequency Speed Bins -DH/DHI* -EJ* -FK* DDR3/L-1600 DDR3-1866 DDR3-2133 CL10 CL12 CL13 Units Parameter Min. Max. Min. Max. Min. Max. tCK Avg.

AD7755

Abstract: AD7750 AD7751
Contextual Info: POWER MANAGEMENT: PRODUCT TO FREQUENCY CONVERTERS, POWER METER MODEL NUMBER TRANSFER FUNCTION Measurement Error G=1 G=16 Dynamic range CH 1=500 % reading % reading Measurement Error G=1 G=16 Dynamic range CH 1=1000 % reading % reading Phase Phase Error Error

Contextual Info: N2CB4G40BN / N2CB4G80BN / N2CB4G16BP N2CC4G40BN / N2CC4G80BN / N2CC4G16BP 4Gb DDR3 SDRAM B-Die Feature  VDD = VDDQ = 1.5V ± 0.075V JEDEC Standard  8n-bit prefetch architecture Power Supply  Output Driver Impedance Control VDD = VDDQ = 1.35V -0.0675V/+0.1V

LT 7659

Abstract: Lucent SLC 2000 installation LTE DL Channel Encoder transistor fcs 9012 GR-253-CORE JT-G704 JT-G706 TMXF28155 TR-62411 21153 specification update
Contextual Info: Preliminary Data Sheet May 2001 TMXF28155 Super Mapper 155/51 Mbits/s SONET/SDH x28/x21 DS1/E1 1 Features • ■ Versatile IC supports 155/51 Mbits/s SONET/SDH interface solutions for T3/E3, DS2, T1/E1/J1, and DS0/E0/J0 applications. Implementation supports both linear 1 + 1, unprotected and ring (UPSR) network topologies.

NT5CB256M8GN-CG

Abstract: NT5CB256M8GN NT5CC512M4GN-CG NT5CC256M8GN-D NT5CB256M8GN- CG NT5CC256M8GN-DI
Contextual Info: 2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature  VDD = VDDQ = 1.5V ± 0.075V JEDEC Standard  Programmable Burst Length: 4, 8 Power Supply  8n-bit prefetch architecture VDD = VDDQ = 1.35V -0.0675V/+0.1V  Output Driver Impedance Control

Contextual Info: 32-bit TX System RISC TX03 Series TMPM330FDWFG Rev 1.02 Semiconductor & Storage Products Company 2013-08-05 Table of Contents Table of Contents. i