PAEO Search Results

at10GHz

Contextual Info: TGF4350-EPU Discrete PHEMT I 300 Jim x 0.25 Jim DC to 22 GHz Frequency Range Floating Source Configuration Nominal Pout of 1 6 -dBm at 10 GHz Nominal PAEof 60 %at 10 GHz Less than 0.8-dB Noise Figure with 13 dB Associated Gain at 10 GHz 0,457 x 0,356 x 0,102 mm 0.018 x 0.014 x 0.004 in.

Contextual Info: 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 262,144x9 524,288 x 9 PRELIMINARY IDT72V2101 IDT72V2111 Integrated Device Technology, Inc. FEATURES: • Choose among the following memory organizations: IDT72V2101 2 6 2 ,1 4 4 x 9 IDT72V2111 5 2 4 ,2 8 8 x 9 • P in-com patible w ith the IDT72V261/72V271 and the

MA350

Abstract: RH46
Contextual Info: MMIiyjlbCHblN rEHEPATOPHblM TPIIOfl TRIODE HMnyfibCHbm reHepaTopHbiii Tpnofl TH-4 6 5 npeflH a3H aneH r e H e p u p o B a H iia n a c T O T H b ix K O / ie ô a H M ii b n ycnneH na H e n p e p b iB H O M m B b ic 0 K 0 - M M n y /ib C H O M rkl-46E The TH-46B triode generates and amplifies RF oscil­

Contextual Info: CMOS SUPERSYNC FIFO 8,192 x 18 16,384 x 18 PRELIMINARY IDT72255LA IDT72265LA Integrated Device Technology, Inc. FEATURES: • Choose among the following memory organizations: IDT72255LA 8 ,1 9 2 x 1 8 IDT72265LA 1 6 ,3 8 4 x 1 8 • Pin-compatible with the IDT72275/72285 SuperSync FI FOs

LF 3.3vOLT

Contextual Info: PRELIMINARY IDT72V255 IDT72V265 3.3 VOLT CMOS SUPERSYN C FIFO 8,192x18,16,384x18 Integrated Device Technology, Inc. • Output enable puts data outputs into high impedance • High-performance submicron CMOS technology • Industrial temperature range -40°C to +85°C is avail­

Contextual Info: CMOS SUPERSYNC FIFO 16,384x9 32,768 x 9 \dt PRELIMINARY IDT72261LA IDT72271LA Integrated Device Technology, Inc. HFEATURES: • Choose among the following memory organizations: IDT72261LA 16,384 x9 IDT72271LA 32,768 x 9 • P in -co m p a tib le w ith the ID T 72V 281/72V 291 and

SC4512

Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 32,768x18 65,536x18 \dt PRELIMINARY IDT72V275 IDT72V285 Integrated Device Technology, Inc. FEATURES: • Choose among the following memoiy organizations: IDT72V275 32,768x18 IDT72V285 65,536x18 • Pin-compatible with the IDT72V255/72V265 SuperSync

C4425

Contextual Info: fax id: 5410 CY7C4425/4205/4215 CY7C4225/4235/4245 64, 256, 512, 1K , 2K, 4K x 18 Synchronous FIFOs F e a tu re s • High-speed, low-power, first-in first-out FIFO memories • 64 x 18 (CY7C4425) • 256 x 18 (CY7C4205) . 512 x 18 (CY7C4215) • 1 K x 18 (CY7C4225)

rs tube

Abstract: ScansU9X22
Contextual Info: K o a K cu cu ib H b iü zen ep a T o p H b iü r e r p o d Coaxial transm itting tetrode Ko axiale Sendetetrode RE5X L - * 37. n nPHMEHEHHE JIaM n a TECJIA RE5XL flBJiaeTCH m o h jh h m JiyyeB L IM TeTpOÄOM C IlpH M O H aK aJIbH blM K a-

FU 50 tube

Abstract: ScansU9X22
Contextual Info: renepaTopHbiü rerpod Transm itting tetrode Sendetetrode RE65A - nPHMEHEHHE JIaMna TECJIA RE65A HBjiaeTca re H e p aTOpHfcIM Jiy^eBBIM TeTpOÆOM K â J ib H b iM K a T O Ä O M h sH a^eH n eM C npÄMOHapacceH B ae- M O H a H O a O M MOIIJHOCTH 6 5 BT,

Contextual Info: re w p a T o p H b iü Tpuod T ra n sm ittin g triode Sendetriode RD150YJ - nP H M E H E H H E JIaM n a TECJIA R D 150YJ HBjiaeTCii reHepaTopHbrM TpHOflOM c npsMOHaKaJibHHM Katoäom h 3H aieH H eM paccenBaeMoä aHoaoM MOiBtHOCTH 1 5 0 K B T , K O T o p b iü n p e , n H a 3 H a ie H

tesla rf oscillator

Contextual Info: r e n e p a r o p H b iü r p u o d T ra n sm itting triode Sendetriode RD5YF -í>110t5 nPHM EHEHHE JIaMna T ECJIA R D 5Y F hbjihctch Koponco BOJIHOBbIM TpHOÄOM C BOflHHHM OXJia»ÄeHHeM h 3Ha^eHneM pacceHBaeMoii aHOÄOM MOmHOCTH 5 KBT, npeÄHa3Hati€HHbrM ÄJIH

tca 780

Abstract: TESLA tubes TESLA 1
Contextual Info: renepciTopHbiü rpuod Transmitting triode Sendetriode RD5XF nPH M EH EH H E JIaMna TECJIA R D 5 X F HBJiseTCH KopoTKoBOjibHOBbiM tphoäom c B03ÄyinHHM oxjiaJKjieHHeM h 3Han;eHMeM pacceHBaeMoü ano^oM MOHÎHOCTH 5 KBT. JIaMna npenHa3HaHeHa ju u paSoTM B Ka^ecTBe reHepaTopa h ycaJIHTeJIH H. q. HJIM B. H . BnjIOTb SO laCTOTbl

vacuum capacitor

Abstract: TC-005
Contextual Info: B a K y y M H b iü K o n d e n c a r o p Vacuum capacitor Vakuumkondensator TC005 -nPHM EHEHHE BaKyyM H biiî KOHaeHcaTOp T E C J I A T C 0 0 5 C HeCKOJIbKHMH CTaKaH00Öpa3HbIMH SJieK' TpoflaMH H3 ajiioMHHHH npeÄHasnaqeH juia npHMeHeHHH b BticoKO^acTOTHbix iie n n x nepe^aT^HKOB, npoMBiniJieHHbix reHepaTopoB

TESLA re025xa

Abstract: re025xa druck RE025X tesla rf oscillators MEPE
Contextual Info: K o a K c u a A b H b iü z e n e p a ro p rn iú , r e r p o d Coaxial transm itting tetrode Koaxiale Sendetetrode RE025XA-<2i41,7 -ï% 014,6 -oi nPHMEHEHHE SjieKTpoHHaa jiaMna TECJIA RE025XA npeacraB jifler coöoii m ohíhhh jiyqeBoii tc t pOÄ KOCßeHHoro HaKajia c m ouihoctbio,

Tesla

Abstract: H3 diode hochspannungsgleichrichter tesla diode
Contextual Info: KeH orp oH R e ctify ing v a cu u m diode H o c h v a k u u m -G le ic h ric h te rd io d e RA05A - M 5 & CM \0 2 8 nPHMEHEHHE JIaMna TECJIA RA05A hbjiäctch KeHOTpoHOM c oähhm aHOflOM, npeaHasHa^eHHbiM jXJiK BbicoKOBOJibTHbix BhiiipjiMKTGJieîï nepeM e H H o ro TOKa.

YXA 50V

Abstract: AETA
Contextual Info: K o a K c u a A b H b iü e e n e p a r o p H b iü rerpod C o a x ia l tra n sm ittin g tetrode K o a xia le Sendetetrode RE1,5XL -nPHM EHEHHE TECJIA R E 1 , 5 X L JIaM n a S B J ia e T C H jiy q e - B bIM TeT pO Ä O M C X ipH M O H aK aJIbH H M K aT O äom h 3Ha^eHHeM pacceHBaeMoii aHOÄOM

tesla diode

Abstract: jo katode
Contextual Info: r< X30T p0H R e ctify ing d isc h a rg e tube G a sg efü llte G le ich rich te rrö h re UA5A - IIPHMEHEHHE JIaMna TECJIA UA5A HBjiaeTca ra30Tp0HOM C OÄHHM aHOÄOM H pTyTHbIM HanojiHeHHeM, K0T0pbiH npe;iHa3HaH OH npnMeHCHHH B BHnpHMHTejIBHblX yCTpOHCTBaX

ky 202 h

Abstract: a1026 ky 202 TESLA 1
Contextual Info: renepaTopHbiü Tpuod T ra n sm ittin g triode Send etriode RD20XF - * 148*1 9 tro*0* nPHM EHEHHE 9 JIaM na T E C J IA R D 2 0 X F hbjihctcä reH epaTOpHKM TpHOÄOM C B03flyiHHbIM OXJiaJKfleHHeM h 3Ha^eHHeM pacceHBaeMOH aHoaoM MOUXHOCTH 20 KBT, KOTopHH npejmasHa^ieH

H3 diode

Abstract: radiator of diode vacuum tube amplifier
Contextual Info: KeH O TpO H R ectifyin g vacuum diode H ochvakuum -G leichrichterdiode RA7XL - nPHMEHEHHE TECJIA RA7XL JIa M n a a JIb H B IM K eH O T p O H O M B 0 3 ^ y in H B iM H B iM C o x ji a > K ,ii e H H e M , npH M eH eH H H ä jih H B J ia e T C í i K o a K c n O JfflH M

Tesla

Contextual Info: r 0 3 0 Tp0 H Rectifying discharge tube G a sge ß llte Gleichrichterröhre UA1A - nPHMEHEHHE JIaMna TECJIA UA1A HBjiseTCH ra30Tpc>HOM C OÄHHM aHOAOM, KOTOpblH HanOJIHeH pTyTbio h npeÄHaäHa'ieH ajia npHMeHeHHs B BbinpHMHTejIbHbIX yCTpOHCTBaX B blC O K O ro

tube RV 278

Abstract: RE025X tesla rf oscillators PAEO lem HA RE025XB keramische
Contextual Info: K o ü K cu a A b H b iü z e m p a r o p r n i ú T e rp o d C o a x ia l tra n sm ittin g tetrode K o a xia le Sendetetrode RE025XB -4417 È/C 0 1 4 ,6 -V i - 0 ,6 io e o »> H >1 35 7 . rv N-' c io otf nP H M E H E H H E 9jieKTpoHH3Ä JiaMna TEC J 1A RE025X B

Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher

Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium